Other

Asahi Kasei Kogyo Kabushiki Kaisha

Asahi Kasei Kabushiki Kaisha

Asahi Kasei Electronics Co., Ltd.

Yoshihiko Shibata

Naohiro Kuze

Kazuhiko Yamanouchi

Yoshihiro Chikamori

Yasuhito Kanno

Takayuki Watanabe

Tsuyoshi Ujihara

Yoichi Shimizu

Takashi Yoshida

Youichi Shimizu

Akihiko Oyama

Hall device is provided by enabling stable provision of a quantum well compound semiconductor stacked structure. It has first and second compound semiconductor layers composed of Sb and at least two of five elements of Al, Ga, In, As and P, and an active layer composed of InGaAsSb(0.8&#x2266;x&#x2266;1.0, 0.8&#x2266;y&#x2266;1.0), which are stacked. Compared with the active layer, the first and second compound semiconductor layers each have a wider band gap, and a resistance value five times or more greater. The lattice constant differences between the active layer and the first and second compound semiconductor layers are each designed in a range of 0.0-1.2%, and the thickness of the active layer is designed in a range of 30-100 nm.

Compound semiconductor multilayer structure, hall device, and hall device manufacturing method

A surface acoustic wave element includes a LiNb,Ta,O,('x' is 0 or more and 1 or less) film on a (,) sapphire substrate, in which a Love wave is propagated as a surface acoustic wave in a specific direction of the LiNb,Ta,O,film. Preferably, a crystal axis of the sapphire substrate and a crystal axis of a (,) LiNb,Ta,O,film ('x' is 0 or more and 1 or less) are parallel to each other; a surface acoustic wave propagation direction is within a range of &plusmn;20 degrees around an axis vertical to a C-axis projection line direction of a crystal axis of the sapphire substrate or the (,) LiNb,Ta,O,film. Alternatively, a C-axis projection line direction of a crystal axis of the sapphire substrate and a C-axis direction of a crystal axis of a (,) LiNb,Ta,O,film (&lsquo;x&rsquo; is 0 or more and 1 or less) are parallel to each other, and the surface acoustic wave propagation direction is within a range of &plusmn;35 degrees around an axis vertical to a C-axis projection line direction of a crystal axis of the sapphire substrate. A piezoelectric substrate preferably has an intermediate layer including of a metal or a metal oxide between the sapphire substrate and the (,) LiNb,Ta,O,(&lsquo;x&rsquo; is 0 or more and 1 or less).

Surface acoustic wave functional wave

A surface acoustic wave functional element is provided that includes a piezoelectric substrate or a multilayer piezoelectric substrate having a large electromechanical coupling coefficient. Semiconductor layers are formed on the piezoelectric substrate. The semiconductor layers include an active layer and a buffer layer. The buffer layer is formed of a structure that has a lattice constant that is the same as or similar to that of the active layer. In addition, input and output electrodes are formed on both sides of the semiconductor layers. The surface acoustic wave functional element attains a large amplification gain at low voltage, and can be used as part of a transmitting/receiving circuit in a high frequency portion of a mobile communication device.

Surface acoustic wave element and electronic circuit using the same

Elastic surface wave functional device and electronic circuit using the

A water treating apparatus is provided with a softening section, including an ion-exchange resin-filled section and a softening section disposed integrally with a vacuum deaerating membrane section so as to allow gases to pass through the membrane while a liquid is prevented from passing therethrough. The apparatus is compact in size and easily handled. The softened water provided thereby is useful as deionized and degassed water for boiler water and for the preparation of integrated circuits.

Apparatus for treating deaerated water

Liquid degassing apparatus is provided wherein one or more porous, hydrophobic tubes are installed inside a vacuum chamber, each such tube having an atomizer located near its inlet end. As liquid to be degassed enters the tube, it is atomized and gas in the liquid passes out of the atomized liquid, through the porous tube and exits the vacuum chamber. The remaining degassed liquid exits the porous, hydrophobic tube through the downstream end of the porous tube and exits the chamber.

Apparatus for degassing a liquid

A method for fastening soft porous polymer tubes into a fastening seat by remolding the tube ends by compression to remove porosity before insertion into the seat or pressure insertion of a hard, strong tube into each porous tube after insertion into the fastening seat to compress it. An adhesive is used to fill the seat to hold the tubes in place.

Growing community of inventors

Fuji, Japan

Yoshihiko Shibata