Fuji Xerox Co., Ltd.

Yoshihiko Sakai

Hiroyuki Hotta

Hiroyuki Miyake

Tsutomu Abe

Yasumoto Shimizu

Seigo Makida

Takayuki Yamada

Kazuhiro Sakai

Atsushi Ogihara

Takehito Hikichi

Kunio Yamada

Mamoru Nobue

Masato Takinami

When a color image is formed using exposure units, photoconductive drums, developing machines, transfer printing machines and the like, a color patch using each monochrome toner prepared for the above developing machines and a color patch formed by overlapping plural colors of toner are formed on a transfer medium as sample images. After the two types of color patches are fixed by a fixing roll, they are detected by a fixed image density sensor installed after the fixing roll. A control section corrects an image formation condition based upon difference in density between the two types of sample images.

Color correction in a color image formation apparatus

A specific reflection area 42 on a paper surface 37a is irradiated with light from a light source 41 via nor not via a lens 43. A photoelectric conversion element 44 is placed on a focal surface in the rearward of the lens 43 and out of the light reflected (including scattering light and diffusion light) from the reflection area 42 on the paper surface 37a, only the whole light reflected within a predetermined angular range is received by the photoelectric conversion element 44 via the lens 43. The density of the image formed on the paper surface 37a is measured from the light reception output. When the paper surface 37a is irradiated with light from the light source 41 via the lens 43, the light source 41 is placed backward from the focal surface 43b in the rearward of the lens 43.

Optical measuring method, optical measuring apparatus and image forming

An unfixed toner image of a reference pattern is formed on a photosensitive member, the unfixed toner image is measured by a development density sensor 13, and the amount of toner to be supplied to a developing device 4 is controlled by a toner supply control unit 60 on the basis of a measurement output, thereby maintaining the image quality constant. If it is judged from a result of a detection of a state amount such as the temperature and the humidity by a state amount sensor 19 that there is a fear that the image quality exceeds an allowable range, a fixed image of a reference pattern is formed on a record medium such as a banner sheet, and the fixed image is measured by an optical sensor 10. Operation amounts such as the charge amount and the exposure value of an image output unit 100 are controlled by an image density control unit 20, thereby maintaining the image quality to be within the allowable range.

Image forming apparatus having high image quality control mechanism

A thin-film type photoelectric conversion device for use in an image input unit of facsimile equipment, a scanner and the like, which uses a thin-film semiconductor as a phoconductive layer to reading not only a monochromatic image but also a color image with high resolution. A photoelectric conversion device having a photoconductive layer disposed between opposing electrodes, in which a surface facing in a direction perpendicular to a direction of film deposition of the photoconductive layer acting as a light-receiving surface.

Thin film type photoelectric conversion device

A method of manufacturing a semiconductor element such as a thin film transistor or a photo diode, in which a voltage is applied to an organic insulating layer in the direction vertical to a substrate during a coating process of polyimide constituting the interlayer insulating layer formed over a semiconductor layer, a prebaking process for initial hardening which immediately follows the coating process, and a postbaking process after the pattern formation of the interlayer insulating layer.

Method of manufacturing a semiconductor element

An image sensor having an photodetecting element array including a plurality of blocks linearly arrayed in a main scan direction, each block consisting of a plurality of photodetecting elements, a plurality of switching elements for transferring every block charges generated in the photodetecting elements, and drive ICs for outputting the charges in the form of image signals. In the image sensor, the switching elements in a block of the photodetecting element array and the switching elements in another block located adjacent to the former block are connected by wires in such a way that the switching elements closest to each other between the blocks are interconnected, the switching elements next close to each other are interconnected, and so on. The wires connecting from the switching elements in a block to the switching elements in blocks on both sides of the former block are disposed oppositely with respect to the main scan direction, and are disposed in such a way that the shortest wire connecting the switching elements is located closest to the photodetecting element array, the next short wire is located next close to the photodetecting element array, and so on.

Image sensor and method of manufacturing the same

An image sensor having an photodetecting element array including a plurality of blocks linearly arrayed in a main scan direction, each block consisting of a plurality of photodetecting elements, a plurality of switching elements for transferring every block charges generated in the photodetecting elements, and drive ICs for outputting the charges in the form of image signals. In the image sensor, the switching elements in a block of the photodetecting element array and the switching elements in another block located adjacent to the former block are connected by wires in such a way that the switching elements closest to each other between the blocks are interconnected, the switching elements next close to each other are interconnected, and so on. The wires connecting from the switching elements in a block to the switching elements in blocks on both sides of the former block are disposed oppositely with respect to the main scan direction, and are disclosed in such a way that the shortest wire connecting the switching elements is located closest to the photodetecting element array, the next short wire is located next close to the photodetecting element array, and so on.

An image sensor manufacturing method, in which a chromium layer or the tantalum layer as barrier metal is formed on the semiconductor layer as the ohmic contact layer of the thin film transistor switching element (TFT). With use of the chromium layer or the tantalum layer, the semiconductor layers of an n.sup.+ hydrogenated amorphous silicon (n.sup.+ a-Si:H) can be protected when metal, e.g., aluminum, is vapor deposited or deposited by the sputtering method. Accordingly, the characteristic of the semiconductor layers can be kept intact, and consequently the reliability of the image sensor is improved. Further, when the chromium layer or the tantalum layer as barrier metal is formed, the lower electrode portion of the photo detect element is formed using the same layer, in the same photolithograph process. Accordingly, the manufacturing of image sensors is simpler than that of the same in which the photo detect elements and the TFTs are formed in different process steps.

Method of manufacturing image sensors

A device for photoelectric conversion and a process for fabricating the device are provided. The device exhibits superior dark current characteristics, and therefore a superior contrast ratio. The device is arranged to reduce or eliminate the vertical component of an electric field under an area where an ohmic contact, rather than a Schottky barrier, exists. The device can be fabricated using process equipment that sputters one or more of the device layers, including the wiring metal.

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Kanagawa, Japan

Yoshihiko Sakai