Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Computer Engineering Co., Ltd.

Yoshihiko Okamoto

Shinji Okazaki

Noboru Moriuchi

Akira Imai

Norio Hasegawa

Tsuneo Terasawa

Norio Saitou

Haruo Yoda

Fumio Murai

Yukinobu Shibata

Akira Hirakawa

Ikuo Takada

Hideo Todokoro

Takashi Yamazaki

Yasuhiro Koizumi

Isao Miyazaki

Masamichi Kobayashi

Hideyuki Yamada

Satoshi Momose

Yasushi Takeuchi

Toshihiro Morii

Koji Sekiguchi

Under the condition that a semiconductor maker and a photomask maker are separated but these are mutually connected with a communication line, the semiconductor maker gives a photomask fabrication schedule information to the photomask maker via the communication line, while the photomask maker fabricates the photomask depending on such fabrication schedule information and delivers the photomask to the semiconductor maker. The photomask maker periodically sends, in the course of fabrication process, a photomask fabrication progress information to the semiconductor maker via the communication line. The semiconductor maker regenerates the photomask fabrication schedule information depending on the photomask fabrication progress information sent from the photomask maker and then transfers the re-generated photomask fabrication schedule information to the photomask maker via the communication line. Therefore, mismatch between fabrication of semiconductor integrated circuit device and supply of photomask can be reduced or eliminated.

Fabrication methods of semiconductor integrated circuit device and photomask

The present invention relates to a micromininiaturization technique to achieve the miniaturization and higher integration of IC chip and to the improvement of a mask used in its manufacturing process. In other words, the phases of lights transmitted through the mask is controlled within one mask pattern. Specifically, a transparent film is formed in such a manner that it covers a mask pattern along a pattern formed by magnifying or demagnifying the mask pattern or otherwise a groove is formed in a mask substrate. A phase difference of 180&#xb0; is generated between the lights transmitted through the mask substrate and the transparent film or the groove, causing interference with each light to offset each other. Therefore, the pattern transferred onto a wafer has an improved resolution, being used in the invention.

Semiconductor integrated circuit device fabrication method using a mask having a phase shifting film covering region and an opening region

Herein disclosed is an exposure technology for a semiconductor integrated circuit device which has a pattern as fine as that of an exposure wavelength. The technology contemplates to improve the resolution characteristics of the pattern by making use of the mutual interference of exposure luminous fluxes.

Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process

The present invention relates to a microminiaturization technique to achieve the miniaturization and higher integration of IC chip and to the improvement of a mask used in its manufacturing process. In other words, the phases of lights transmitted through the mask is controlled within one mask pattern. Specifically, a transparent film is formed in such a manner that it covers a mask pattern along a pattern formed by magnifying or demagnifying the mask pattern or otherwise a groove is formed in a mask substrate. A phase difference of 180&deg; is generated between the lights transmitted through the mask substrate and the transparent film or the groove, causing interference with each light to offset each other. Therefore, the pattern transferred onto a wafer has an improved resolution, being used in the invention.

Mask for manufacturing semiconductor device and method of manufacture thereof

The reliability of a photomask is improved. The planar shape of a mask substrate of a resist shading mask having a shading pattern composed of a resist film is made circular.

Method of manufacturing photomask, photomask, and method of manufacturing semiconductor integrated circuit device

The present invention relates to a microminiaturization technique to achieve the miniaturization and higher integration of IC chip and to the improvement of a mask used in its manufacturing process. In other words, the phases of lights transmitted through the mask is controlled within one mask pattern. Specifically, a transparent film is formed in such a manner that is covers a mask pattern along a pattern formed by magnifying or demagnifying the mask pattern or otherwise a groove is formed in a mask substrate. A phase difference of 180&deg; is generated between the lights transmitted through the mask substrate and the transparent film or the groove, causing interference with each light to offset each other. Therefore, the pattern transferred onto a wafer has an improved resolution, being used in the invention.

Process for fabricating semiconductor integrated circuit device, and

The present invention relates to a microminiaturization technique to achieve the miniaturization and higher integration of IC chip and to the improvement of a mask used in its manufacturing process. In other words, the phases of lights transmitted through the mask is controlled within one mask pattern. Specifically, a transparent film is formed in such a manner that it covers a mask pattern along a pattern formed by magnifying or demagnifying the mask pattern or otherwise a groove is formed in a mask substrate. A phase difference of 180.degree. is generated between the lights transmitted through the mask substrate and the transparent film or the groove, causing interference with each light to offset each other. Therefore, the pattern transferred onto a wafer has an improved resolution, being used in the invention.

Mask for manufacturing semiconductor device and method of manufacture

To prevent positional shifts of the image forming plane during the exposure process using the two-layer phase shift mask, the height position of the semiconductor wafer 14 is moved in the optical axis direction according to the mask substrate thickness of the second component mask 12b, prior to performing the exposure process which uses the stacked-layer mask 12 that comprises a first component mask 12a formed with a pattern of light-shielding areas and light-transmitting areas and a second component mask 12b formed with a phase shift pattern to produce a phase shift in the transmitted light.

Exposure method, aligner, and method of manufacturing semiconductor

Technology for forming a fine light beam having a size smaller than the theoretical limit determined by the wavelength of light and characteristics of an objective lens. A beam distribution shifter having two light transmission regions is disposed between a source of light and an objective lens, a phase shifter is provided on one of the two light transmission regions to divide the light passing through the beam distribution shifter into two light fluxes having phases opposite to each other, and the two light fluxes are focused through the objective lens to form a fine light beam having a size smaller than the theoretical limit determined by the wavelength of the light and characteristics of the objective lens due to destructive interference between the two light fluxes.

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Kodaira, Japan

Yoshihiko Okamoto