Renesas Technology Corp.

Rohm Co., Ltd.

Kabushiki Kaisha Toshiba

Sanyo Electric Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Other

Nec Corporation

Sharp Kabushiki Kaisha Corporation

Renesas Electronics Corporation

Taiyo Yuden Co., Ltd.

Shinko Electric Industries Co., Ltd.

Shinko Electric Industries Inc., Ltd.

Yoshihiko Nemoto

Kazumasa Tanida

Mitsuo Umemoto

Kenji Takahashi

Masahiro Sunohara

Naotaka Tanaka

Yoshio Okayama

Katsuyuki Ito

Michinobu Tanioka

Tomotoshi Sato

Hiroshi Terao

Tomonori Fujii

Hitoshi Yonemura

Masataka Hoshino

A method of manufacturing semiconductor devices includes the following steps. That is, a support board is adhered to a rear surface of a substrate proper which has a plurality of circuit element parts with prescribed functions formed on a circuit forming plane on an obverse surface thereof. First groove portions are formed in the substrate proper. An insulating film () is formed on a surface of a semiconductor substrate () by using an insulating material, and holes are formed in the first groove portions. Metal wiring patterns () are formed which extend from electrode portions to at least parts of inner walls of the holes. A prescribed amount of the support board at a bottom of each of the holes is removed. A conductive material is filled into the holes thereby to form penetration electrodes (). A second groove portions are formed in the first groove portions.

Semiconductor device manufacturing method and electronic equipment using same

A semiconductor device production method including: the step of forming a stopper mask layer of a first metal on a semiconductor substrate, the stopper mask layer having an opening at a predetermined position thereof; the metal supplying step of supplying a second metal into the opening of the stopper mask layer to form a projection electrode of the second metal; and removing the stopper mask layer after the metal supplying step.

Semiconductor device production method and semiconductor device

A conveyance system for a semiconductor wafer can be used without any change before and after a support plate is adhered to the wafer. Also, the finish accuracy of the wafer and the positioning accuracy between the wafer and the support plate can be relaxed, thus improving the manufacturing efficiency. The wafer is formed on its peripheral portion with a stepped portion, which is deeper than a finished thickness obtained by partial removal of the rear surface thereof and which can be eliminated by the partial removal of the wafer rear surface. The separation portion has a length which extends radially outward from a flat surface, and which is greater than a total sum of a maximum-minimum difference between the finish allowances of the diameters of the wafer and the support plate, and a maximum value of a positioning error between the wafer and the support plate generated upon adhesion thereof.

Semiconductor wafer having a separation portion on a peripheral area

A manufacturing method for a semiconductor device, including the steps of: forming a passivation film that covers a surface of a semiconductor substrate on which electrodes have been formed, in which an opening is formed so as to expose a predetermined electrode from among the electrodes; forming a diffusion prevention plug of a first metal in the vicinity of the opening in the passivation film; supplying a second metal material to the surface of the semiconductor substrate on which the diffusion prevention plug has been formed, so as to form a seed layer of the second metal; forming a resist film that covers the seed layer and in which an opening is formed so as to expose a predetermined region of the seed layer on the diffusion prevention plug; supplying a third metal material into the opening in the resist film so as to form a protrusion electrode of the third metal; removing the resist film after the step of forming a protrusion electrode; and removing the seed layer after the step of forming a protrusion electrode.

Manufacturing method for semiconductor device and semiconductor device

Semiconductor device includes a pair of substrates () disposed oppositely, semiconductor elements () formed in the substrates (), respectively, and having semiconductor circuits () and electrodes (), respectively, a wiring conductor () interposed between the electrodes (), and a through electrode () extending through one substrate () and connected to the electrode () via the wiring conductor (). The other substrate () is disposed laterally of the through electrode (). Surface of the through electrode () projecting from the one substrate () and lateral surface of the element () are coated with an insulation material (). The through electrode () has one end exposed in a back surface of the one substrate (), while other end is positioned flush with a back surface of the other substrate (), being exposed.

Semiconductor device and method of manufacturing the same

The invention provides a semiconductor chip manufacturing method, including a step of forming a front-surface-side concave portion in a semiconductor substrate having a front surface and a rear surface, a functional device being formed on the front surface, the front-surface-side concave portion being formed in the front surface and having a predetermined depth smaller than a thickness of the semiconductor substrate; a dummy plug forming step of supplying nonmetallic material into the front-surface-side concave portion and embedding a dummy plug made of the nonmetallic material; a thinning step of removing a part of the rear surface of the substrate and thinning the semiconductor substrate so that the thickness of the semiconductor substrate becomes smaller than the depth of the front-surface-side concave portion and so that the front-surface-side concave portion is formed into a through-hole; a dummy plug removing step of removing the dummy plug; and a step of supplying metallic material into the through-hole and forming a penetration electrode.

Semiconductor chip manufacturing method, semiconductor chip, semiconductor device manufacturing method, and semiconductor device

This invention offers a manufacturing method to reduce a manufacturing cost of a semiconductor device having a through-hole electrode by simplifying a manufacturing process and to enhance yield of the semiconductor device. A first insulation film is formed on a top surface of a semiconductor substrate. A part of the first insulation film is etched to form an opening in which a part of the semiconductor substrate is exposed. Then a pad electrode is formed in the opening and on the first insulation film. A second insulation film is formed on a back surface of the semiconductor substrate. Then a via hole having an aperture larger than the opening is formed. And a third insulation film is formed in the via hole and on the second insulation film. The third insulation film on a bottom of the via hole is etched to expose the pad electrode. After that, a through-hole electrode and a wiring layer are formed in the via hole. Finally, the semiconductor substrate is cut and separated into a plurality of semiconductor dice.

Manufacturing method of semiconductor device

With a fluid insulating material applied on a convex substrate and a fluid insulating material applied on a concave substrate, a columnar conductive portion of the convex substrate is inserted into a hole of the concave substrate. With this, a conductive portion and an internal interconnection are electrically connected with each other via a bump. Therefore, a semiconductor device having a through electrode which enables a size reduction, has high reliability and is easily formed even with a large aspect ratio, and a method of manufacturing the same are obtained.

Semiconductor device having through electrode and method of manufacturing the same

The invention provides a semiconductor chip manufacturing method including the steps of: forming a concave portion extended in the thickness direction of a semiconductor substrate which has a front surface and a rear surface and has a function device formed on the front surface, from the front surface; forming an oxidation preventive film made of an inert first metal material by supplying the first metal material onto the inner wall surface of the concave portion; supplying a second metal material containing a metal which is oxidized more easily than the first metal material to the inside of the concave portion after the step of forming the oxidation preventive film; electrically connecting the second metal material supplied to the inside of the concave portion and the function device; and thinning the semiconductor substrate so that the thickness thereof becomes thinner than the depth of the concave portion by removing the semiconductor substrate from the rear surface while leaving the oxidation preventive film.

Semiconductor chip and manufacturing method for the same, and semiconductor device

A semiconductor chip production method including the steps of: forming a front side recess in a semiconductor substrate; depositing a metal material in the front side recess to form a front side electrode electrically connected to a functional device formed on the front surface; removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a thickness greater than the depth of the front side recess; forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step; and depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode.

Semiconductor chip production method, semiconductor device production method, semiconductor chip, and semiconductor device

Semiconductor device production method

An inspection probe comprises resilient probe pins having electric contacts disposed in positions corresponding to electrodes of an external terminal of a semiconductor device, a base substrate including pitch-expansion wiring layers of the probe pins, and a backup substrate, the base substrate, and a flexible substrate, wherein at least one precious metal layer is disposed at the tip of the probe pins on the side having the electric contact for contacting the electrodes of the semiconductor device to be inspected, at least one metal layer is disposed on the probe pins and the pitch-expansion wiring layers, the precious metal layer and the metal layer are composed of the same material or composed of different materials, and a roughness pattern comprising fine marks is provided on the surfaces of the probe pins on the side having the electric contacts for contacting the electrodes of the semiconductor device to be inspected.

Growing community of inventors

Tokyo, Japan

Yoshihiko Nemoto