Sharp Kabushiki Kaisha Corporation

Other

Kobe Leadmikk Co., Ltd.

Yoshihiko Matsuo

Yoichi Tsuda

Ryukichi Ikeda

Kenji Shimogishi

Kimihiko Yoshida

Fumio Okuda

Kazuo Kusuda

Tsuneo Matsumura

Toshihumi Yoshikawa

Naoki Sata

An electronic heat pump device has an emitter and a collector, stems supporting these components, a spacing retention member for keeping a spacing between the stems constant, and a sealing member for maintaining a vacuum between the stems. The emitter has a first semiconductor substrate and an emitter electrode, while the collector has a second semiconductor substrate and a collector electrode. The emitter electrode and the collector electrode are disposed so as to be opposed to each other with a space interposed therebetween. At least one of the first and second semiconductor substrates is integrally formed with electrically and thermally insulative spacers that keep the space between the emitter electrode and the collector electrode constant.

Vacuum diode-type electronic heat pump device and electronic equipment having the same

There is provided a small-size electronic heat pump device which is low in power consumption and which secures a vacuum gap without use of an additional circuit. The electronic heat pump device includes an emitterand a collector. An electrically and thermally insulative spacer sectionfor keeping a space, i.e. vacuum gap G between an emitter electrodeand a collector electrodeconstant is integrally formed in a semiconductor substrateof the collector, which makes it possible to maintain the vacuum gap to be a specified space while a back flow of heat is prevented in a simple structure with a reduced number of component parts.

Electronic heat pump device, laser component, optical pickup and electronic equipment

A method for forming a plating film, comprising the steps of: applying a plating film onto an object to be plated at a first current density for a predetermined period in a plating bath having a cathode capable of varying current and an anode and; and maintaining the object to be plated at a second current density lower than the first current density. According to the present invention, it is possible to improve solderability of a plating film for conventional lead-free solder by a simple method, which allows the productivity to further enhanced, resulting in a plating film with reduced production costs.

Method for forming plating film

Method for forming plating film and electronic component having plating film formed theron by same method

An object of the invention is to raise and stabilize the efficiency of light transmission between a light-emitting device and a light-receiving device. A light-transmissive resin projection has a constant height over the extent from the light-emitting device to the light-receiving device and is shaped triangular in section. Since an outer package is white-colored, the interface between the light-transmissive resin projection and the outer package is also white-colored and, hence, the light reflectivity of the interface is high. Accordingly, light emitted from the light-emitting device is reflected at faces of the light-transmissive resin projection, gathered to the vertex portion, guided to the light-receiving device, and received by the light-receiving device. At this time, light is transmitted from the light-emitting device to the light-receiving device without being dispersed within the light-transmissive resin projection. Further, since the light transmission distance is short, the light transmission efficiency is high and is stabilized.

Optical coupling semiconductor apparatus and method for manufacturing the same

A resin for sealing a compound semiconductor is here disclosed which contains, as a matrix, a siloxane compound for producing a silicone resin by addition reaction and which has a group comprising the bond of an organic group and an oxy group. The group comprising the bond of the organic group and the oxy group bonds to a terminal of the molecule of the siloxane compound, and as this group comprising the bond, 0.1 to 10% by weight, preferably 0.1 to 1.5% by weight of an alkoxy group (--OR') is used. A compound semiconductor chip is covered with the resin for sealing the compound semiconductor and then reacted under predetermined conditions to produce a silicone resin and simultaneously to chemically bond a siloxane group (--Si--O--) in the silicone resin to an element in a portion of the compound semiconductor chip which comes in contact with the silicone resin.

Growing community of inventors

Yamatotakada, Japan

Yoshihiko Matsuo