Hitachi, Ltd.

Hitachi Haramachi Electronics Co., Ltd.

Other

Hitachi Power Semiconductor Device, Ltd.

Hitchi, Ltd.

Yoshihiko Koike

Ryuichi Saito

Shigeki Sekine

Mutsuhiro Mori

Junya Kaneda

Yasuo Kondo

Teruyoshi Abe

Akira Tanaka

Nobuya Koike

Kiyoshi Nakata

Shin Kimura

Akira Horie

Syuuji Saitoo

Tadao Kushima

Hideya Kokubun

Hideo Shimizu

Kazuji Yamada

Kazuhiro Suzuki

Yasuhisa Aono

Kazutaka Okamoto

Masahiro Koizumi

Jin Onuki

Isao Kobayashi

Yasutoshi Kurihara

Katsuaki Saito

Mamoru Sawahata

Takashi Haramaki

Yutaka Higashimura

Takashi Hosokawa

Sigeki Sekine

Masahisa Inagaki

Hideo Arakawa

Kazuhiro Oyama

Tasuhisa Aono

Yuuji Wakisawa

Makoto Kitano

Hisanori Okamura

Noboru Baba

Michiaki Hiyoshi

Katsunori Azuma

Masahiko Sakamoto

Hirosi Akiyama

Takahiro Fujita

Shigeharu Nonoyama

Kentaro Yasuda

Yasushi Toyoda

Shinji Ookubo

The respective main electrodes of the semiconductor switching elements such as IGBTs, which are respectively mounted on the plurality of insulating boards, are electrically connected to each other via the conductor member. This configuration makes it possible to suppress the occurrence of the resonant voltage due to the junction capacity and the parasitic inductance of each semiconductor switching element.

Power semiconductor module

An elastic printed board is provided so that stress applied by the silicon gel is absorbed by the printed board. Further, the printed board is formed to be so narrow that the stress can escape. On the other hand, the wires on which a high voltage is applied are patterned on respective printed boards. This serves to prevent discharge through the surface of the same printed board serving as a current passage. This design makes it possible to hermetically close the power module, prevent intrusion of moisture or contamination as well as displacement, transformation and cracks of the cover plate.

Power semiconductor module and fabrication method thereof

An elastic printed board is provided so that stress applied by the silicon gel is absorbed by the printed board. Further, the printed board is formed to be so narrow that the stress may be escaped. On the other hand, the wires on which a high voltage is applied are patterned on respective printed boards. This serves to prevent discharge through the surface of the same printed board served as current passage. This design makes it possible to hermetically close the power module, prevent intrusion of moisture or contamination as well as displacement, transformation and crack of the cover plate.

A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

Circuit board

A composite material is provided, which has a low thermal expansivity, a high thermal conductivity, and a good plastic workability, which composite material may be applied to semiconductor devices and many other uses. The composite material is composed of metal and inorganic particles having a smaller coefficient of thermal expansion than the metal. It is characterized in that the inorganic particles are dispersed in such a way that 95% or more of them (in terms of their area in cross-section) form aggregates of complex configuration joined together. The composite material contains 20-80 vol % of copper oxide, with the remainder being copper. It has a coefficient of thermal expansion of 5&#xd7;10to 14&#xd7;10/&#xb0; C. and thermal conductivity of 30-325 W/m&#xb7;K in the range of room temperature to 300&#xb0; C. It is suitable for the radiator plate of semiconductor devices and the dielectric plate of electrostatic attractors.

Composite material including copper and cuprous oxide and application thereof

Composite material, and manufacturing method and uses of same

Provided are a composite material excellent in plastic workability, a method of producing the composite material, a heat-radiating board of a semiconductor equipment, and a semiconductor equipment to which this heat-radiating board is applied. This composite material comprises a metal and an inorganic compound formed to have a dendritic shape or a bar shape. In particular, this composite material is a copper composite material, which comprises 10 to 55 vol. % cuprous oxide (Cu O) and the balance of copper (Cu) and incidental impurities and has a coefficient of thermal expansion in a temperature range from a room temperature to 300&deg; C. of from 5&times;10 to 17&times;10 /&deg; C. and a thermal conductivity of 100 to 380 W/m&middot;k. This composite material can be produced by a process comprising the steps of melting, casting and working and is applied to a heat-radiating board of a semiconductor article.

In a semiconductor module comprising, a semiconductor element, an electrically insulating base having an outer surface to be connected to an electrically grounded surface, and an inner surface on which the semiconductor element is arranged, an electrically insulating cover covering the semiconductor element on the inner surface, and first and second electrically conductive members each of which is connected to the semiconductor element and extends to the exterior of the semiconductor module through the electrically insulating cover, a part of each of the first and second electrically conductive members on the exterior of the semiconductor module is arranged away from the outer surface to electrically isolate the part of the each of the first and second electrically conductive members from the electrically grounded surface.

Semiconductor module and inverter device

A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

Semiconductor device

Semiconductor device having power semiconductor elements

An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise. Each of the semiconductor modules includes a plurality of switching device chips and at least one diode chip formed on a metal substrate. Electrode plates are provided in locations of the module adjacent to the switching device chips and the diode chips to facilitate connection of the electrodes of the respective chips to one another and to the outside of the module.

Semiconductor module including switching device chips and diode chips

An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a first switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise.

Semiconductor module for a power conversion device

An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a first switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise. Each module forms one arm portion of the inverter. Lifetimes of the diodes and the switching devices are set in a manner to equalize losses in the inverter. Preferably, insulated gate bipolar transistors (IGBTs) formed by diffusion are used as the switching devices since the lifetimes of these devices can easily be adjusted to optimize design of the inverter.

Power conversion device and semiconductor module suitable for use in the

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Hitachinaka, Japan

Yoshihiko Koike