Kanto Denka Kogyo Co., Ltd.

Yoshihiko Iketani

Korehito Kato

Yoshinao Takahashi

Yukinobu Shibusawa

Wataru Kashikura

Tetsuya Fukasawa

Hiroki Takizawa

Hisashi Shimizu

Mitsuharu Shimoda

Shinichi Kawaguchi

Ryo Kimura

Sho Kikuchi

Yoshimasa Sakurai

Yuki Sato

The present invention aims to provide a method by which fluorine-containing sulfide compounds, particularly sulfide compounds that contain hydrogen and fluorine, can be produced in a simple, low-cost and industrial manner. Provided is a method of producing a fluorine-containing sulfide compound represented by the following formula (2):(F)-A-S-A-(F)&#x2003;&#x2003;(2)(wherein Aand Aare independently an optionally substituted hydrocarbyl group with a carbon number of 1 to 3; n and m represent the numbers of fluorine atoms binding to Aand A, with n+m=1 to 13 being satisfied), comprising reacting a chlorine-containing sulfide compound represented by the following formula (1):(Cl)-A-S-A-(Cl)&#x2003;&#x2003;(1)(wherein Aand Aare independently an optionally substituted hydrocarbyl group with a carbon number of 1 to 3; n and m represent the numbers of chlorine atoms binding to Aand A, with n+m=1 to 13 being satisfied) and a fluorinating agent.

Method of producing fluorine-containing sulfide compounds

A dry etching gas composition is used which contains a saturated or unsaturated hydrofluorocarbon compound (excluding 1,2,2,3-pentafluorocyclobutane and 1,1,2,2-tetrafluorocyclobutane) represented by a general formula (1):CxHyFz(where x, y, and z are integers that satisfy 2&#x2264;x&#x2264;4, y+z&#x2264;2x+2, and 0.5&#x3c;z/y&#x3c;2). Use of the etching gas composition containing the above-described hydrofluorocarbon makes it possible to selectively etch a nitrogen-containing silicon-based film (b1) with respect to a silicon oxide film, a non-silicon-based mask material, or a polycrystalline silicon film.

Dry etching gas composition and dry etching method

Provided is a plasma etching method that enables, in a semiconductor fabrication process, selective processing of a film consisting of a single material, such as SiOor SiN, or a composite material of SiOand SiN over a mask material as well as processing into satisfactorily vertical processed shapes. It is possible, for example, to enhance selectivity over a mask material or other materials excluding an etching target, to reduce damage on sidewalls, and to suppress etching in the lateral direction by generating a plasma of a gas compound having a thioether skeleton represented by general formula (1) or a mixed gas thereof and etching a film consisting of a composite material or a single material, such as SiOor SiN, thereby depositing a protective film that contains sulfur atoms and has a lower content of fluorine atoms than the cases of using common hydrofluorocarbon gases:general formula (1): Rf&#x2014;S&#x2014;Rf&#x2003;&#x2003;(1)where Rfis a monovalent organic group represented by CHFand Rfis a monovalent organic group represented by CHF.

Plasma etching method using gas molecule containing sulfur atom

An object of the present invention is to provide a simple, low-cost, and industrial method of producing a compound having a polyene skeleton containing hydrogen and fluorine and/or chlorine. A method of producing a halogenated diene represented by formula (1): AAC&#x2550;CA-CA=CAA[A, A, A, and Aare each independently hydrogen, fluorine, chlorine, a (perfluoro)alkyl group having 1 to 3 carbon atoms, or a (perfluoro)alkenyl group; Aand Aare each independently hydrogen, fluorine, or chlorine; at least one of Ato Ais hydrogen; at least one of Ato Ais fluorine or chlorine] comprises a step of subjecting the same or different halogenated olefin(s) represented by formula (2): AAC&#x2550;CAX [Aand Aare each independently hydrogen, fluorine, chlorine, a (perfluoro)alkyl group having 1 to 3 carbon atoms, or a (perfluoro)alkenyl group; Ais each independently hydrogen, fluorine, or chlorine; X is bromine or iodine] to a coupling reaction in the presence of a zero-valent metal and a metal salt.

Method of producing compound having butadiene skeleton containing hydrogen and fluorine and/or chlorine

A chlorine fluoride feeding device and feeding process are provided that can stably generate industrially applicable chlorine fluoride (ClF), control flow rate, and provide continual feed. The feeding process of chlorine fluoride of this invention is a feeding process to feed chlorine fluoride generated by loading a gas that contains fluorine atoms and a gas that contains chlorine atoms to a flow-type heat reactor or a plasma reactor, and it can stably generate and safely feed chlorine fluoride for a long time by reacting chlorine fluoride that is difficult to pack at a high pressure, such that an amount that can be packed in a gas container such as a gas cylinder is limited, with two or more types of gas materials that can be packed safely in a gas container by liquefaction, or with such gas material and a solid material.

Feeding process of chlorine fluoride

A silicon oxide film or a silicon nitride film is selectively etched by using an etching gas composition including a hydrofluorocarbon that has an unsaturated bond in its molecule and is represented by CxHyFz, wherein x is an integer of from 3 to 5, and relationships y+z&#x2264;2x and y&#x2264;z are satisfied. Also, a silicon oxide film is etched with high selectivity relative to a silicon nitride film by controlling the ratio among the hydrofluorocarbon, oxygen, argon, etc., included in the hydrofluorocarbon-containing etching gas composition.

Growing community of inventors

Shibukawa, Japan

Yoshihiko Iketani