Opnext Japan, Inc.

Oclaro Japan, Inc.

Yoshihiko Iga

Hiroshi Moriya

Yutaka Inoue

Susumu Sorimachi

Yasuhisa Semba

Hideki Hara

Keiichi Miyauchi

Within a semiconductor laser device, mounting a semiconductor laser element array of multi-beam structure on a sub-mount, the semiconductor laser element array of multi-beam structure comprises one piece of a semiconductor substrate; a common electrode, which is formed on a first surface of the semiconductor substrate; a semiconductor layer, which is formed on the other surface of the semiconductor substrate, and has a plural number of light emitting portionswithin an inside thereof; a plural number of anode electrodesof a second conductivity type, which are formed above the plural number of light emitting portions, respectively; and a supporting portion, which is provided outside a region of forming the light emitting portions, wherein on one surface of the sub-mount is connected an electrodeof the semiconductor laser element array through a solder, and that solderis formed to cover a supporting portion and an electrode neighboring thereto, and further on the electrodeis formed a groove portionbetween the supporting portionneighboring and the light emitting portions

Multi-beam semiconductor laser device

In a multi-beam semiconductor laser device, relative difference in shear strain applied to each of light-emitting portions of a laser chip mounted on a submount is suppressed, thereby reducing relative difference in polarization angle. A semiconductor laser element array mounted on a submount has a structure in which a semiconductor layer having two ridge portions is stacked on a substrate, and Au plating layers are formed on the surfaces of p type electrodes formed on the ridge portions. In each of the ridge portions, a central position of the Au plating layer in a width direction is intentionally displaced with respect to a central position of the underlying light-emitting portion in a width direction, so that shear strain is applied to each of the light-emitting portions at a stage before the semiconductor laser element array is mounted on the submount.

Semiconductor laser device

Growing community of inventors

Hitachinaka, Japan

Yoshihiko Iga