Mitsubishi Electric Corporation

Yoshihiko Hirota

Shigeru Kusunoki

Chihiro Tadokoro

Junji Yahiro

A high voltage semiconductor device includes a semiconductor substrate, a p type base region in a first main surface, an ntype emitter region in the p type base region, an ntype cathode region adjacent to an end surface of the semiconductor substrate and not penetrating the semiconductor substrate, a ptype collector region in a second main surface, a first main electrode, a second main electrode, a third main electrode, and a connection portion connecting the second main electrode and the third main electrode. A resistance between the p type base region and the ntype cathode region is greater than a resistance between the p type base region and the ptype collector region. In the high voltage semiconductor device in which an IGBT and a free wheel diode are formed in a single semiconductor substrate, occurrence of a snap-back phenomenon is suppressed.

High voltage semiconductor device including a free wheel diode

A semiconductor device includes a transistor, a first diode, and a second diode. A collector of the transistor and a cathode of the first diode are electrically connected. The collector of the transistor and a cathode of the second diode are electrically connected, and an emitter of the transistor and an anode of the second diode are electrically connected. The first diode and the second diode are formed in an identical substrate. Thereby, the semiconductor device can be produced in a smaller size and in less steps.

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Chiyoda-ku, Japan

Yoshihiko Hirota