Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Renesas Electronics Corporation

Yoshihiko Asai

Yasuki Yamakawa

Kanji Muto

Masahiko Moriwaki

Hiroki Nishii

Tomoyoshi Nakaigawa

Shuichi Horiguchi

Kanji Mutou

Yoshikazu Ezawa

Akira Nakajima

Koji Kubo

Tomoya Ogawa

Kazushige Tamura

Takashi Kurafuji

Noboru Takada

Kazuya Ohashi

Kiyoshi Mitani

Akihiko Kanda

Satoru Kotani

Takanori Moriyasu

Kazuo Yoshihara

Yoko Kimura

Kazutoshi Ishii

Masayuki Yoshii

An object of the present invention is to increase a writing speed to a flash memory while suppressing an increase in noise. In the high-speed write mode, the memory controller simultaneously performs a first write operation with a second write current having a current value smaller than the first write current with respect to a second number of memory cells having a larger number than the first write current. At the completion of the first write operation, the memory controller simultaneously performs the second write operation by the third write current having a larger current value than the second write current with respect to the memory cell determined by the sense amplifier to have not completed the write operation in the determination process.

Semiconductor device

To provide an information processing apparatus, a reading control method, and a computer readable storage medium that can improve the secrecy of information written in a secret area compared with the case of controlling access only by authentication, the information processing apparatus includes a nonvolatile memory that has a secret area where secret information is stored, an authentication controller that authenticates access to the nonvolatile memory, a flag information storage unit that stores flag information, and a memory controller that controls access to the nonvolatile memory by using the flag information stored in the flag information storage unit. The memory controller allows reading of the secret information from the secret area when a value of the flag information is a specified value and validity of access is authenticated by the authentication controller.

Information processing apparatus, reading control method, and computer readable storage medium

A sensitivity analysis system has a memory device in which an interconnect structure data indicating an interconnect structure included in a semiconductor device is stored. The interconnect structure has: a main interconnection; and a contact structure electrically connected to the main interconnection and extending toward a semiconductor substrate. Parameters contribute to parasitic capacitance of the interconnect structure, and variation of each parameter from a design value caused by manufacturing variability is represented within a predetermined range. The sensitivity analysis system further has: a parameter setting unit that sets the variation to a plurality of conditions within the predetermined range; a capacitance calculation unit that calculates the parasitic capacitance of the interconnect structure in each of the plurality of conditions; and a sensitivity analysis unit that analyzes, based on the calculated parasitic capacitance, response of the parasitic capacitance to variation of the each parameter.

System for analyzing sensitivity of parasitic capacitance to variation of semiconductor design parameters

A semiconductor device has an interconnect structure that includes a main interconnection and a contact structure. Parameters contributing to parasitic capacitance and interconnect resistance of the interconnect structure include: main parameters including width/thickness of the main interconnection; and sub parameter. Variation of each parameter from a design value caused by manufacturing variability is represented within a predetermined range. A method of designing the semiconductor device includes: calculating the maximum capacitance value, the minimum capacitance value, the maximum resistance value and the minimum resistance value of the interconnect structure under a condition that respective variation amplitudes of the main parameters do not simultaneously take maximum values and variation of the sub parameter is fixed to a predetermined value; generating a CR-added netlist; and performing operation verification of the semiconductor device by using the CR-added netlist.

Growing community of inventors

Tokyo, Japan

Yoshihiko Asai