Hitachi, Ltd.

Renesas Technology Corp.

Hitachi High-tech Corporation

Hitachi Via Mechanics Ltd.

Renesas Electronics Corporation

Hitachi-high-technologies Corporation

Hitachi Cable, Inc.

Yoshihide Yamaguchi

Hiroyuki Tenmei

Asao Nishimura

Ichiro Anjo

Hiroshi Hozoji

Naoya Kanda

Noriyuki Oroku

Kosuke Inoue

Shigeharu Tsunoda

Madoka Minagawa

Kenji Ujiie

Akira Yajima

Toshio Miyamoto

Yuji Shirai

Sumiko Fujisaki

Yasumori Narizuka

Mitsuko Itou

Toshiya Satoh

Masahiko Ogino

Mitsuaki Katagiri

Atsushi Kazama

Takamichi Suzuki

Takao Terabayashi

Tadanori Segawa

Hiroyuki Kobayashi

Masaru Izawa

Kazunori Shinoda

Kohei Kawamura

Yu Hasegawa

Yutaka Kouzuma

Takehiko Hasebe

Hisashi Sugiyama

Chiko Yorita

Naoya Kitamura

Hideyasu Murooka

Makio Watanabe

Ryoji Iwamura

Masayuki Kyoui

Shigeharu Tunoda

Masakazu Kishi

Hiroshi Oyama

Yasuko Yamada

A semiconductor fabricating method for a film to be processed containing a transition metal on an upper surface of a semiconductor wafer placed in a processing chamber in a container being etched with a gas for complexing the transition metal supplied into the processing chamber, including a first step of adsorbing, to the film, the complexing gas, while supplying the complexing gas, then increasing a temperature of the wafer to form an organic metal complex on a surface of the film, and volatilizing and desorbing the organic metal complex, and a second step of adsorbing, to the surface of the film, the complexing gas at a low temperature, while supplying the complexing gas, then stopping the supply of the complexing gas, and stepwise increasing the temperature of the wafer to volatilize and desorb an organic metal complex formed on the surface of the film.

Semiconductor fabricating method

A semiconductor manufacturing apparatus includes: a stage installed inside a processing chamber and holding a semiconductor substrate having a high-k insulating film including silicate; and a gas supply line including a first system supplying reactive gas to the processing chamber and a second system supplying catalytic gas to the processing chamber, wherein mixed gas which includes complex forming gas reacting with a metal element included in the high-k insulating film to form a first volatile organometallic complex and complex stabilizing material gas increasing stability of the first organometallic complex is supplied as the reactive gas, and catalytic gas using a second organometallic complex, which modifies the high-k insulating film and promotes a formation reaction of the first organometallic complex, as a raw material is supplied.

Method of making a semiconductor device including etching of a metal silicate using sequential and cyclic application of reactive gases

Provided is a plasma etching method which enables etching with high accuracy while controlling and reducing surface roughness of a transition metal film. The etching is performed for the transition metal film, which is formed on a sample and contains a transition metal element, by a first step of isotropically generating a layer of transition metal oxide on a surface of the transition metal film while a temperature of the sample is maintained at 100&#xb0; C. or lower, a second step of raising the temperature of the sample to a predetermined temperature of 150&#xb0; C. or higher and 250&#xb0; C. or lower while a complexation gas is supplied to the layer of transition metal oxide, a third step of subliming and removing a reactant generated by an reaction between the complexation gas and the transition metal oxide formed in the first step while the temperature of the sample is maintained at 150&#xb0; C. or higher and 250&#xb0; C. or lower, and a fourth step of cooling the sample.

Plasma etching method and plasma processing apparatus

Provided is a semiconductor manufacturing apparatus that can etch a metal film containing a transition metal element at high speed and with high accuracy by using a complexing gas. The semiconductor manufacturing apparatus includes: a vacuum container; a processing chamberthat is provided in the vacuum container, and includes a stageon which a sampleformed with a metal film containing a transition metal element is placed; and a vaporization chamberthat is provided in the vacuum container, and includes a vaporizing nozzle unitconfigured to vaporize a complexing gas raw material liquid supplied from an outside. A complexing gas obtained by vaporizing the complexing gas raw material liquid is introduced into the processing chamber to etch the metal film of the sample.

Semiconductor manufacturing apparatus

Provided is a semiconductor manufacturing apparatus including: a container in which a processing chamber is installed; a stage installed in the processing chamber and configured to hold a semiconductor substrate; a gas supply line configured to supply reactive gas to the processing chamber; and a vacuum line configured to exhaust the processing chamber, wherein the semiconductor substrate includes a high-k insulating film, and as the reactive gas, mixed gas including complex-forming gas forming a volatile organometallic complex by reacting with a metal element included in the high-k insulating film and complex stabilizing material gas that increases stability of the organometallic complex is supplied.

Semiconductor manufacturing apparatus and method for manufacturing semiconductor device

Semiconductor manufacturing apparatus for manufacturing a semiconductor device having a high-K insulating film, and a method for manufacturing the semiconductor device

A shielded electronic component including a wiring board, at least one semiconductor chip mounted on a main surface of the wiring board, a sealant which seals the whole of an upper surface of the wiring board, and a nickel (Ni) plating film formed on an upper surface of the sealant is provided. The Ni plating film is formed on a palladium (Pd) pretreatment layer formed on the upper surface of the sealant with using high-pressure COin a state of protecting a back surface of the wiring board, and is electrically connected with an end portion of a ground wiring layer of the wiring board or a ground (GND) connection through-hole connected with the end portion of the ground wiring layer.

Shielded electronic components and method of manufacturing the same

Provided is a valuable-metal recovery method for recovering metals from lithium ion batteries using comparatively simple equipment and without using a cumbersome process. In said method, a positive electrode material from lithium ion batteries, containing lithium and a transition metal, is dissolved in an acidic solution, thereby generating lithium ions and ions of the transition metal in the acidic solution. Said acidic solution and a recovery liquid are then made to flow with an anion-permeable membrane interposed therebetween, causing the lithium ions to permeate from the acidic solution to recovery solution. Lithium ions are then recovered from the recovery liquid containing dissolved lithium ions.

Metal recovery method and dialysis device

This invention provides: an exposure apparatus and exposure method based on a maskless exposure technique which uses a two-dimensional optical modulator, in which maskless exposure technique, the exposure apparatus and exposure method employ a first irradiation source optics for drawing a pattern based on exposure pattern data, and a second irradiation source optics for irradiating an energy ray onto a desired area of space on a region inclusive of a region in which the pattern has been drawn; and a method of manufacturing a wiring Substrate (Board); thus, highly accurate pattern forming based on the exposure pattern data is achieved at high throughput and at low costs.

Exposure apparatus and exposure method, and method of manufacturing electrical wiring board

The mask-less exposure apparatus includes: a stage which moves with the substrate having a photosensitive resin layer with sensitivity to ultraviolet radiation formed thereon; a first light source for emitting light containing a wavelength component in the wavelength range of 300 to 410 nm; a first light irradiation optical system for modulating a radiant flux emitted from the first light source based on data of a desired exposure pattern to image a pattern on the photosensitive resin layer; a second light source for emitting light containing a wavelength component in the wavelength range of 450 to 2500 nm; and a second light irradiation optical system for guiding a radiant flux emitted from the second light source to a second light irradiation area that is set so as to include at least a first light irradiation area.

Exposure apparatus and exposing method and method of manufacturing a printed wiring board

The present invention sufficiently secures conductor component content ratio in wiring formed on a multilayer circuit board and increases reliability by fabricating the multilayer circuit board by steps of drawing wiring precursor patterns containing a paste of compound for forming wiring conductor containing (a) superfine metal particles (metal nanoparticles) whose average particle size is 1-10 nm; (b) an organic coating compound coated on the surface of the superfine metal particle in the film thickness of 1-10 nm; (c) a latent reactive organic compound reacting with the organic coating compound in the range of 100-250&#xb0; C., (d) metal particles whose average particle size is 0.5-10 &#x3bc;m, and (e) dispersion medium that stably disperses components (a) through (d) on a substrate by screen printing, sintering by heating the patterns to 100-250&#xb0; C., and electrochemically treating the patterns to allow the conductor to deposit in a desired cross-sectional area in the inside.

Compound for forming wiring conductor, fabrication method of circuit board using the same and circuit board

The present invention is a semiconductor device having the semiconductor element obtained by cutting a semiconductor wafer with the electrode pad formed on one side along a scribe line, a semiconductor element protective layer on the semiconductor element which has a opening on the pad, a stress cushioning layer on the layer which has the opening on the pad, a lead wire portion reaching the layer from the electrode pad via the openings, external electrodes on the lead wire portion, and the conductor protective layer on the layers, the layer and the conductor protective layer forming the respective end faces on the end surface of the semiconductor element inside the scribe line and exposing the range from the end face of the end surface to the inside of the scribe line.

Semiconductor device and manufacturing method thereof

A semiconductor device which includes a semiconductor chip, an insulating film formed on the semiconductor chip, a plurality of projected stress relaxation materials formed on the insulating film, projected electrodes covering at least tops of the stress relaxation materials, and wiring lines for electrically connecting the projected electrodes and element electrodes of the semiconductor chip.

Semiconductor device having projected electrodes and structure for mounting the same

A semiconductor apparatus in which flip chip bonding is enabled without any underfill, and which comprises a semiconductor device, an electrically insulating layer formed on the semiconductor device by mask-printing an electrically insulating material containing particles, and an external connection terminal formed on the electrically insulating layer and electrically connected with an electrode of the semiconductor device. The electrically insulating layer is formed with a thickness so as to provide &#x3b1;-ray shielding of the semiconductor device.

Semiconductor device and method for producing the same

A semiconductor module, comprising a wiring substrate on which wiring is formed, a semiconductor device electrically connected to the wiring formed on the wiring substrate, and an external connection terminal arranged on the semiconductor device mounted side of the wiring substrate so as to be a connected portion between the wiring and the outside electrically connected thereto, wherein there is formed an insulating resin layer thicker than the semiconductor device between the wiring substrate and the external connection terminal.

Semiconductor module

Growing community of inventors

Fujisawa, Japan

Yoshihide Yamaguchi