Tokyo Electron Limited

Yoshihide Tada

Toshio Nakanishi

Shigenori Ozaki

Takuya Sugawara

Genji Nakamura

Seiji Matsuyama

Masaru Sasaki

Kazuhide Hasebe

Shigeru Nakajima

Tomonori Fujiwara

Masayuki Imai

Shigemi Murakawa

Shingo Hishiya

Tsukasa Yonekawa

Anri Nakajima

Masaru Sasakii

Shin Yokoyama

Asami Suemura

An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

Method of modifying insulating film

In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.

Method for forming insulation film

The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.

Method for forming underlying insulation film

A process for producing an electronic device material of a high quality MOS-type semiconductor having an insulating layer and a semiconducting layer. The process includes a step of CVD-treating a substrate to be processed having single-crystal silicon as a main component to thereby form an insulating layer, and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots to thereby modify the insulating film by using the thus generated plasma.

Process for producing materials for electronic device

A manufacturing method for semiconductor devices that can improve uniformity in the surface of a silicon nitride film or a nitride film to be formed and improve production efficiency is provided. A step of forming a first film that is a silicon oxide film or a silicon oxynitride film on a silicon substrate, a step of forming a second film that is a tetrachlorosilane monomolecular layer, and a step of forming a third film that is a silicon nitride monomolecular layer by performing a nitriding process on the second film are included. A silicon nitride film having a predetermined film thickness is formed by repeating the step of forming the second film and the step of forming the third film for a predetermined number of times. In a manufacturing apparatus, a plurality of silicon substrates are arranged on a stair-like wafer boat, and a process gas is supplied toward the upper side of a reaction tube from a process gas supply pipe.

Method of fabricating semiconductor device

A process for producing an electronic device material of a high quality MOS-type semiconductor having an insulating layer and a semiconductor layer with excellent electrical characteristics. A substrate incorporating single-crystal silicon as a main component is CVD-treated to form an insulating layer. The substrate is then exposed to a plasma generated from a process gas by microwave radiation from a plane antenna having a plurality of slots, to thereby modify the insulating film.

Method of producing electronic device material

A method of forming an insulating film containing silicon oxy-nitride includes a loading step, temperature raising step, oxidation step, cycle purge step, and annealing step, in this order. The temperature raising step is performed while supplying nitrogen gas and oxygen gas for preventing a silicon layer surface from being nitrided, at a supply ratio 100:1 to 1000:1. The oxidation step is performed at a temperature of 700 to 950&deg; C. while supplying a gas that contains 1 to 5 vol % of water vapor and 95 to 99 vol % of nitrogen gas, to form a silicon oxide film. The annealing step is performed at a temperature of 800 to 950&deg; C. while supplying a gas that contains 10 to 100 vol % of nitrogen monoxide gas, to convert a portion of the silicon oxide film into silicon oxy-nitride.

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Nirasaki, Japan

Yoshihide Tada