Sharp Kabushiki Kaisha Corporation

Mitsubishi Chemical Corporation

Yoshihide Suzuki

Makoto Ishikawa

Keiichi Sawai

Noriyuki Saitou

Masaru Miyoshi

An etching liquid contains iodine, an iodine compound and alcohol as solute, and solvent such as water. The etching liquid etches a gold or gold alloy layer formed on the surface of a substrate for a semiconductor device or a liquid crystal device evenly. A plurality of gold or gold alloy columns is formed on the layer. The columns are etched scarcely by the etching liquid. The etching liquid etches the gold or gold alloy layer existing between the columns evenly. The etching liquid may further contain a surfactant.

Etching liquid

A method for manufacturing a semiconductor device includes the steps of: forming an interlayer dielectric film on a silicon substrate having a diffusion layer formed in one-side surface thereof; forming at least one contact hole in the interlayer dielectric film; forming a first high melting-point metal film and a first high melting-point metal nitride film on the surface of the contact hole in this order as a barrier metal; thermal treatment for improvement of a barrier property of the first high-melting point metal nitride film; and forming a second high melting-point metal nitride film, a second high melting-point metal film, and an aluminum-containing wiring film to fill the contact hole in this order in the same atmosphere.

Growing community of inventors

Osaka, Japan

Yoshihide Suzuki