Seiko Epson Corporation

Yoshihide Matsuo

Masashi Yoshiike

Katsuji Arakawa

Tomoyoshi Saito

Haruo Yamaguchi

An electronic device includes a first drive substrate (a pressure chamber substrate and a vibration plate) including a piezoelectric element formed thereon, and a second substrate (a sealing plate) bonded to the first drive substrate, a bonding resin forms an accommodating space that surrounds and accommodates a drive region of the piezoelectric element between the first substrate and the second substrate, and a reinforced resin that supports the first substrate and the second substrate in a position deviated from the drive region in the accommodating space.

Electronic device, and manufacturing method of electronic device

An electronic device includes a first substrate that has a drive region in a first surface, and a second substrate that has a second surface that is joined to the first surface by a joining resin portion composed of a photosensitive resin. In the electronic device, a space that houses the drive region is defined between the first surface and the second surface by the joining resin portion, and a joining surface of the joining resin portion joined to the first surface is smaller than a joining surface of the joining resin portion joined to the second surface.

Electronic device, liquid ejecting head, and method of manufacturing electronic device

An electronic device includes a drive substrate (a pressure chamber substrate and a vibration plate) including a piezoelectric element and electrode wirings related to driving of the piezoelectric element formed thereon, and a sealing plate bonded thereto, the electrode wirings are made of wiring metal containing gold (Au) on the drive substrate through an adhesion layer which is a base layer, and has a removed portion in which a portion of the wiring metal in a region containing a part bonded to a bonding resin is removed and the adhesion layer is exposed.

A semiconductor device has a through electrode formed in a through hole which penetrates a Si substrate from one surface to the other surface of the Si substrate, wherein a rectangular electrode pad is provided on the other surface with an insulation film laid between the electrode pad and the other surface, an opening of the through hole on the one surface side is circular, an opening of the through hole on the other surface side is rectangular, and the area of the opening on the other surface side is made smaller than the area of the opening on the one surface side.

Semiconductor device, circuit substrate, and electronic device

A manufacturing method for a semiconductor device includes a hole portion formation step for forming hole portions whose entire width is substantially identical to the width of the opening portion in a part of the active surface side of the substrate on which electronic components are formed, a curved surface formation step for curving the bottom surface of the hole portion while maintaining the width of the bottom surface in the hole portions substantially identical to the width of the opening portion, a connecting terminal formation step for forming connecting terminals that serve as the external electrodes of the electronic circuits by burying metal in the hole portions, and an exposure step for exposing a part of the connecting terminals by carrying out processing on the back surface of the substrate.

Manufacturing method for semiconductor device, semiconductor device, and electronic apparatus

A method of manufacturing a nozzle plateis disclosed. The nozzle platehas a plurality of nozzle openingsthrough each of which a droplet is adapted to be ejected. The method includes the steps of: preparing a processing substrate (silicon substrate) constituted from silicon as a main material, the processing substrate having two major surfaces; providing a supporting substratefor supporting the processing substrate onto one major surface of the processing substrate; and forming the plurality of nozzle openingson the other major surface of the processing substrate by subjecting the other major surface of the processing substrate to an etching process while the processing substrate is supported by the supporting substrate

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Chino, Japan

Yoshihide Matsuo