Sumitomo Electric Device Innovations, Inc.

Yoshihide Komatsu

Takeshi Igarashi

Hiroyuki Oguri

A capacitor according to an embodiment of the present disclosure includes a substrate, a first electrode disposed on the substrate, a dielectric film disposed on the first electrode, a second electrode disposed on the dielectric film, a third electrode in contact with the second electrode in a first region of at least a portion of a lower surface of the third electrode, and an organic insulator film covering an upper portion of the dielectric film, an upper portion of the second electrode, and the third electrode. In a normal direction normal to an upper surface of the substrate, the organic insulator film is not disposed between the lower surface of the third electrode and the second electrode.

Capacitor and method of manufacturing the same

A capacitor having a MIM structure includes a dielectric formed by laminating a plurality of times on an upper surface of a lower electrode, and an upper electrode on an upper surface of the dielectric. Forming of the dielectric includes forming the first dielectric layer on the upper surface of the lower electrode, cleaning an upper surface of the first dielectric layer by at least one of jet cleaning and dual fluid cleaning, and forming the second dielectric layer on an upper surface of the cleaned first dielectric layer.

Capacitor with MIM

A metal-insulator-metal (MIM) capacitor and a process of forming the same are disclosed. The process includes steps of: forming a lower electrode that provides a lower layer and an upper layer; forming an opening in the upper layer; forming a supplemental layer on the lower layer exposed in the opening; heat treating the lower electrode and the supplemental layer; covering at least the upper layer of the lower electrode with an insulating film; and forming an upper electrode in an area on the insulating film, where the area is not overlapped with the supplemental layer and within 100 &#x3bc;m at most from the supplemental layer. A feature of the MIM capacitor is that the supplemental layer is made of a same metal as a metal contained in the lower layer of the lower electrode.

Metal-insulator-metal (MIM) capacitor

A method of manufacturing a capacitor having an MIM structure includes forming a dielectric by laminating a plurality of times on an upper surface of a lower electrode, and forming an upper electrode on an upper surface of the dielectric. The forming of the dielectric includes forming a first dielectric layer on the upper surface of the lower electrode, cleaning an upper surface of the first dielectric layer by at least one of jet cleaning and dual fluid cleaning, and forming a second dielectric layer on the cleaned upper surface of the first dielectric layer.

Method of manufacturing capacitor

A metal-insulator-metal (MIM) capacitor and a process of forming the same are disclosed. The process includes steps of: forming a lower electrode that provides a lower layer and an upper layer; forming an opening in the upper layer; forming a supplemental layer on the lower layer exposed in the opening; heat treating the lower electrode and the supplemental layer; covering at least the upper layer of the lower electrode with an insulating film; and forming an upper electrode in an area on the insulating film, where the area is not overlapped with the supplemental layer and is within 100 &#x3bc;m at most from the supplemental layer. A feature of the MIM capacitor is that the supplemental layer is made of a same metal as a metal contained in the lower layer of the lower electrode.

Growing community of inventors

Yokohama, Japan

Yoshihide Komatsu