Tokyo Shibaura Denki Kabushiki Kaisha

Kabushiki Kaisha Toshiba

Yoshihide Kato

Toshiaki Shinozaki

Kinya Usuda

Takashi Tsuchiya

Fumiaki Shigemitsu

Kei Kirita

Riki Ogawa

Hideo Tsuchiya

Kazuto Matsuki

Yasushi Sanada

Tadahiro Takigawa

Takuro Nagao

Eiji Nishimura

A pattern inspecting method, comprising preparing a sample having a first and a second inspection regions and an imaging device having a plurality of pixels, scanning the first inspection region to a first direction using the imaging device to obtain a first measurement pattern representing at least parts of the first inspection region, scanning the second inspection region to the first direction using the imaging device to obtain a second measurement pattern representing at least parts of the second inspection region, comparing the first measurement pattern and the second measurement pattern with each other to determine presence or absence of a defect formed on the sample, and controlling a scanning condition for scanning a pattern of the second inspection region by the imaging device so as to keep the same with the scanning condition when the pattern of the first inspection region is scanned by the imaging device.

Pattern inspecting method and pattern inspecting apparatus

A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

Method and apparatus for forming resist pattern

A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of the electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

A method of forming a fine pattern with a charged beam, comprises steps of irradiating, with a charged beam, a predetermined region of a sample to form an exposure pattern on the sample, and irradiating, with at least one of a charged beam or an electromagnetic wave, and at a dose smaller than the dose for forming the main pattern, the entire surface of the specific pattern and nonpattern regions around the specific pattern region to perform an auxiliary exposure. The step of performing the auxiliary exposure is performed at a high voltage of, for example, more than 30 KeV so as not to change the molecular distribution along the direction of thickness of an irradiated portion of the sample.

Method of forming a fine pattern with a charged particle beam

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Kawasaki, Japan

Yoshihide Kato