Denso Corporation

Yoshihide Kai

Yuu Fujimoto

A buffer stage includes a first transistor having a control terminal connected to an output terminal of an operational amplifier and a second transistor connected in series to a main energization path of the first transistor. An overcurrent controlling circuit is configured to apply an output voltage of the operational amplifier to the control terminal of the first transistor and allow a normal operation of the first transistor when an energization current of a main energization path of an output transistor detected by an overcurrent detection transistor is less than a predetermined value, and is configured to control the output voltage of the operational amplifier to a predetermined control voltage according to a current flowing in a main energization path of the overcurrent detection transistor when the energization current of the main energization path of the output transistor is equal to or greater than the predetermined value.

Regulator circuit

A semiconductor storage device includes a memory cell, a switch, a source driver, a drain driver, a voltage measurement circuit and a control electrode driver. The memory cell has a control electrode, a floating electrode, a source and a drain. In a writing to the memory cell, the voltage measurement circuit measures a voltage generated between the control electrode and the source when the switch is in an on state connecting the control electrode and the drain and a predetermined current flows from the current source to the memory cell, and the control electrode driver applies to the control electrode a voltage that is controlled based on the voltage measured by the voltage measurement circuit.

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Kariya, Japan

Yoshihide Kai