Covalent Materials Corporation

Yoshihata Yanase

Hiroshi Shirai

Jun Komiyama

Hiroshi Oishi

A method of analyzing a nitride semiconductor layer in which a mixing ratio at a ternary mixed-crystal nitride semiconductor layer can be analyzed non-destructively, simply, and precisely, even its surface is covered with a cap layer is provided. The nitride semiconductor layer having an AN layer or a BN layer with a thickness of 0.5 to 10 nm that is stacked on an ABN layer (A and B: 13 group elements, 0&#x2266;x&#x2266;1) is subjected to reflection spectroscopy to obtain a reflection spectrum of the ABN layer. Let an energy value in a peak position of the reflection spectrum be a band gap energy E, and let a band gap energy value of ABN (x=1) be Eand a band gap energy value of ABN (x=0) be E, x is calculated from Equation E=(1&#x2212;x)E+xE&#x2212;bx(1&#x2212;x) (where b is bowing parameter corresponding to A and B).

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Hadano, Japan

Yoshihata Yanase