Hitachi, Ltd.

Hitachi Device Eng. Co., Ltd.

Yoshiharu Takeuchi

Akira Endo

Hisao Katto

June Sugiura

Nozomi Horino

Yuji Arakawa

A semiconductor memory device having wiring formed next to word lines at the extreme ends of the memory cell arrays or next to word lines of the dummy cell arrays, in order to prevent such word lines from breaking or from becoming deformed. The wiring is irrelevant to the circuit operation, but is provided with a fixed potential, and is formed through the steps of forming the word lines. The wiring makes the processing conditions applied to the neighboring word lines the same as the processing conditions applied to other word lines.

Method of making a semiconductor memory device

Semiconductor memory device with additional conductive line to prevent

Semiconductor memory device with means to prevent word line breakage

Growing community of inventors

Koganei, Japan

Yoshiharu Takeuchi