Panasonic Liquid Crystal Display Co., Ltd.

Hitachi Displays, Ltd.

Japan Display Inc.

Yoshiharu Owaku

Takuo Kaitoh

Terunori Saitou

Hidekazu Miyake

Toshio Miyazawa

Katsumi Matsumoto

Takahiro Kamo

Hideki Nakagawa

Hironori Kondo

A method of manufacturing a liquid crystal display device having a substrate with a display area, a control area adjacent to the display area, and terminals. The method includes forming an interlayer insulating film and an a-Si film below an image signal line in the display area and below a line in the same layer as the image signal line in the control area, forming a scribing line outside the terminals, forming a ground line in the same layer as the scan line outside the scribing line, forming the interlayer insulating film outside the terminal, without forming the a-Si film on the interlayer insulating film, forming a static electricity protection line coupled to the terminal on the interlayer insulating film, the static electricity protection line being coupled to other static electricity protection lines outside the ground line, and, after the steps above, separating the substrate along the scribing line.

Liquid crystal display device and manufacturing method thereof

In order to prevent dielectric breakdown of TFT or an interlayer insulating film by static electricity with a reduced area at low cost, a liquid crystal display device has a configuration in which an interlayer insulating film and an a-Si film are formed in a display area and a control area inside terminals. Image signal lines and scan lines are insulated from each other through the interlayer insulating film and a-Si film in their intersections. On the other hand, only the interlayer insulating film is formed between static electricity protection lines and an earth line outside the terminals. When static electricity is induced, dielectric breakdown is caused to occur in the area outside the terminals. Thus, the display area and the control area are protected from the static electricity.

A liquid crystal parallax barrier panel has the structure formed by stacking an electrode substrate, a liquid crystal layer and a sealing substrate in order. The electrode substrate includes a glass substrate, a first electrode which is branched in plural stages, a second electrode which is arranged on the same layer as the first electrode and is branched in plural stages, and an alignment film. Out of the first electrode and the second electrode, twig portions which include distal ends of branched portions of one electrode and twig portions which include distal ends of branched portions of another electrode are alternately arranged such that the twig portion which includes the distal end of the branched portion of one electrode enters between two twig portions which include the distal ends of branched portions of another electrode. In a state where slits are not formed in a parallax barrier, the first electrode and the second electrode have the same voltage, while the slits are formed in the parallax barrier when a predetermined voltage is applied to the first electrode.

Liquid crystal parallax barrier, display device and liquid crystal display device

A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side.

Display device

A liquid crystal display device includes a semiconductor layer which is formed of a poly-Si layer and an a-Si layer and formed above a gate electrode with a gate insulating film interposed therebetween. A source electrode or a drain electrode is formed above the semiconductor layer. An n+Si layer is formed between the source electrode or the drain electrode and the semiconductor layer. Since ends of the source electrode or the drain electrode are formed inside ends of the semiconductor layer, leak current at the ends of the semiconductor layer can be reduced.

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Mobara, Japan

Yoshiharu Owaku