Renesas Electronics Corporation

Other

Mitsubishi Denki Kabushiki Kaisha

Yoshiharu Ono

Takeo Ishibashi

Tsutomu Tanaka

Masahiro Tadokoro

Teruhiko Kumada

Hideharu Nobutoki

Toshiyuki Toyoshima

Hiroyuki Kawajiri

Junjiro Sakai

Kazunori Yoshikawa

Kazumasa Yonekura

Sachiko Hattori

Yoshihiro Miyagawa

Yoshihiro Shimizu

Osamu Karino

Yuko Odamura

Mamoru Mochizuki

Takehiro Furukawa

Takashi Makita

There is provided a charging device which can rapidly charge, with a single charger, portable devices of a plurality of charging specifications. A plurality of available power indicating circuits included in a USB modulenotify, through a data line, a portable device coupled to the charging device of a signal indicating suppliable amount of current. A CPUobtains, from a portable device coupled thereto, information identifying the portable device, at the time of adjustment. A memoryhas a table stored therein, for a plurality of portable devices, defining a correspondence between information identifying a portable device and an available power indicating circuit. Referring to the table based on the obtained information, the CPUselects an available power indicating circuit and, at the time of actual operation, activates only the selected available power indicating circuit.

Charging device

An electronic flow meter includes a magnetic sensor, phase-A and phase-B drivers, a phase-A comparator, a phase-B comparator, a two-phase encoder, and a rotational speed timer. The two-phase encoder determines a normal/reverse direction where the impeller is rotated based on event signals sampled by the phase-A and the phase-B comparators, respectively, causing a counter to count up or to count down according to the normal/reverse direction as determined, thereby outputting an event count signal. The rotational speed timer calculates a rotational frequency of the impeller from the event count signal outputted by the two-phase encoder and sets frequencies of respective sampling signals of the phase-A and the phase-B comparators at a time when the rotational frequency of the impeller is measured next, and respective drive periods of the phase-A and the phase-B drivers in accordance with the rotational frequency of the impeller as calculated.

Electronic flow meter

It is an object of the present invention to provide a method of manufacturing a semiconductor device that reduces the deterioration in processed configuration and the pattern roughness of a film to be processed, and is close to the original design and applicable to a dual damascene step and the like. The manufacturing method comprises a processing mask layer forming step of forming a processing mask layer (a lower organic film and a middle layer) comprising at least one film, and hardening treatment for at least one film of the processing mask layer by applying a film and heat hardening treatment; a processing mask layer etching step of applying a resist film for exposure to the processing mask layer, exposing and developing it to form a resist pattern, and etching the processing mask layer using the resist pattern as a mask; and a film to be processed etching step of etching the film to be processed using the pattern of the processing mask layer formed at the processing mask layer etching step as a mask.

Manufacturing method of semiconductor device

A via-filling material includes a polymer containing a repeating unit represented bywherein Rone of hydrogen, fluorine, chlorine, bromine, and methyl group; Ris one of hydrogen, a Calkyl group, and a Calkyl group in which the hydrogen is replaced by at least one of fluorine, chlorine, and bromine; and X is &#x2014;C(&#x2550;O)O&#x2014; or &#x2014;S(&#x2550;O)O&#x2014;. This via-filling material does not generate deposits around an opening of a via hole during plasma etching and provides a semiconductor integrated circuit with high reliability, even when a trench wider than the via hole is formed by plasma etching around the via hole filled with the via-filling material.

Via-filling material and process for fabricating semiconductor integrated circuit using the material

There is described a semiconductor manufacturing apparatus for coating the surface of a semiconductor wafer with an organic coating, such as anti-reflective coating, which shortens a down time required in association with removal of compounds that tend to sublime and enables simplification of removal of the compounds and an increase in safety of the removal operation. A top plate of a hot plate unit for heating a semiconductor wafer is formed from light-transmissive material such as quartz. A light source unit for illuminating UV-rays effective for decomposing organic compounds is disposed on the top plate. The hot plate unit bakes the semiconductor wafer coated with the organic material, and compounds that have a tendency to sublime including organic material adhere to the lower surface of the top plate in association with the baking operation. Every time a predetermined number of semiconductor wafers have been processed by the hot plate unit, the light source unit radiates UV-rays onto the compounds adhering to the top plate.

Semiconductor manufacturing apparatus, method for cleaning the semiconductor manufacturing apparatus, and light source unit

Growing community of inventors

Tokyo, Japan

Yoshiharu Ono