Mitsubishi Heavy Industries Limited

Morioki Sangyo Company Limited

Yoshiharu Mori

Daisuke Kobayashi

Daisuke Matsuura

Kazuyuki Hirose

Osamu Kawasaki

Masaki Kusano

The purpose of the invention is to compensate for the radiation tolerance of a semiconductor memory. An apparatus () for compensating for radiation tolerance comprises: a voltage value acquisition unit () that acquires a data retention voltage value that is a maximum voltage value at which data is inverted when a power supply voltage of a semiconductor memory having a latch circuit is lowered; a correction value determination unit () that determines a voltage correction value on the basis of a difference between the data retention voltage value and a reference voltage value; and a voltage adjustment unit () that adjusts at least one among the power supply voltage and a substrate bias voltage by using the voltage correction value. The reference voltage value is set to be equal to or lower than the data retention voltage value that satisfies a required radiation tolerance.

Apparatus for compensating for radiation resistance of semiconductor memory, method therefor, and electronic circuit

A device for treating fluid with ultra-high magnetic force including the casing of the device as subdivided with partition panels into Nos. 1, 2, 3 chambers, and a separation chamber, as well as fluid passages. Both a louver and a plurality of latticed bodies providing magnetic fields are juxtaposed into the No. 1 and 3 chambers, respectively, to magnetically treat the fluid. The No. 2 chamber is provided to free the floc from the fluid, and a separation chamber is provided to precipitate the floc and discharge it outside. Slats of the louver are designed to taper off downstream. The louver and latticed bodies are removable from either the No. 1 or No. 3 chambers, respectively, and one side of the casing is detachable from the body of the casing. Permanent magnets are secured to each of the outer surfaces of both sides of the casing, providing magnetic fields through the Nos. 1, 3 chambers and a separation chamber. A plurality of injection pipes are perforated, respectively, such that they communicate with the Nos. 1, 2, 3 chambers and the separation chamber. The area of each square constituting a latticed body is enlarged or reduced according to fluid conditions. Either a screw or axial fan is fitted between a louver and the latticed body adjacent to it such that a large volume of fluid may be treated.

Device for treating a fluid with ultra-high magnetic force

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Tokyo, Japan

Yoshiharu Mori