Mitsubishi Electric Corporation

Yoshifumi Sasahata

Eitaro Ishimura

Takeshi Saito

Kazuhisa Takagi

Keisuke Matsumoto

Tohru Takiguchi

Masakazu Takabayashi

Nobuo Ohata

Ryota Takemura

Kazuki Yamaji

Ryosuke Nagao

A substrate has a front surface and a back surface opposite from the front surface. An n-type layer, a multiplication layer, a p-type electric field control layer, a light absorption layer, and a window layer are layered in order on the front surface. A p-type region is provided in part of the window layer. An anode electrode is provided on the p-type region and connected to the p-type region. An anode pad and a cathode pad are provided on the back surface. First and second connecting holes penetrates the substrate. A third connecting hole penetrates from the window layer to the n-type layer. The cathode pad is electrically connected to the n-type layer via the first connecting hole. The anode pad is electrically connected to the anode electrode via the second and third connecting holes. A light-receiving region is provided on the back surface.

Back-surface-incident type light-receiving device and optical module

According to the present invention, a semiconductor device includes a substrate comprising a front end face, a rear end face and side faces, a plurality of semiconductor lasers provided on the substrate, a forward optical multiplexer to multiplex forward output light of the plurality of semiconductor lasers and output the multiplexed light to the front end face, a backward optical multiplexer to multiplex backward output light of the plurality of semiconductor lasers and output the multiplexed light to the rear end face and a plurality of backward waveguides connected to an output section of the backward optical multiplexer, wherein the plurality of backward waveguides includes a main waveguide disposed at a center of the output section and a plurality of lateral waveguides disposed on both sides of the main waveguide to bend toward the side faces and output light from the side faces diagonally to the side faces.

Semiconductor device

An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; an optical amplifying section amplifying output light of the wave coupling section; first optical waveguides respectively optically connecting respective semiconductor lasers to the wave coupling section; a light intensity lowering section located in each of the first optical waveguides and lower light intensity of reflected light that is reflected at a reflecting point located in the optical semiconductor device and that returns to the respective semiconductor lasers; to decrease line width of the light output by the semiconductor lasers.

Optical semiconductor device

An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; first optical waveguides respectively optically connecting respective semiconductor lasers to the wave coupling section; a phase regulator regulating phase of reflected light that is reflected at a reflecting point located in the optical semiconductor device and that returns to the semiconductor lasers; a second optical waveguide optically connecting the wave coupling section to the phase regulator; an optical amplifying section amplifying output light of the phase regulator; and a third optical waveguide optically connecting an output of the phase regulator to the optical amplifying section. The phase regulator adjusts the phase of reflected light that returns to the semiconductor lasers to decrease line width of the light output by the semiconductor lasers.

A semiconductor light detecting element includes: an InP substrate; and a semiconductor stacked structure on the InP substrate and including at least a light absorbing layer, wherein the light absorbing layer includes an InGaAsBi layer lattice-matched to the InP substrate.

Growing community of inventors

Tokyo, Japan

Yoshifumi Sasahata