Sony Corporation

Chiyoda Corporation

Yoshifumi Mori

Akira Ishibashi

Setsuo Usui

Kenji Funato

Eriko Matsui

Yoshihiko Kuroki

Ryuichi Ugajin

Atsushi Toda

Junichi Sato

Takashi Noguchi

Katsuya Shirai

Hitoshi Kimura

Shigeru Kojima

Yuriko Kaino

Hideharu Nakajima

Tatsushiro Hirata

Toshiyuki Kunikiyo

Shoji Kanamaru

Yasuhiro Sakamoto

Masao Itabashi

Hironobu Narui

Dharam Pal Gosain

Kazumasa Nomoto

Hiroji Kawai

Shoji Hirata

Norikazu Nakayama

Kazuhiko Nemoto

Chiaki Kojima

Jonathan Westwater

Osamu Matsuda

Takayuki Kawasumi

Masafumi Ozawa

Noriyuki Yoneda

Munekazu Nakamura

Toyoharu Ohata

Hiroshi Yoshimatsu

Miyako Nakagoe

Masamichi Ogawa

Kunio Kaneko

Tsunekazu Okada

Hidehiko Kudoh

Toru Hiraga

Norio Iwamoto

Hideto Ishikawa

A novel metal complex of a heterocyclic aromatic compound which shows a low activation energy, is stabilized structurally, is capable of modulation of the structure thereof, and capable of preferably functioning as a molecular device in technological fields. The metal complex of a heterocyclic aromatic compound comprises a transition metal (for example, silver ion) as a central atom, and basic ligands comprised of a 5-membered heterocyclic aromatic compound (for example, pyrrole rings), in which the position of the central atom can be changed by an internal factor such as transfer of an electric charge or by an external factor such as application of an electric field, a change in acidity of the surrounding environment, etc., whereby the number of atoms (or the number of electrons) relating to the coordination ability can be modulated, and, upon polymerization, the conformation can be modulated depending on the position of the central atom.

Metal complex of heterocyclic aromatic compound

A method of fabricating a single crystal thin film includes forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other. In this method, either the first heat-treatment or the second heat-treatment may be performed by irradiation of laser beams, preferably, emitted from an excimer laser. A single crystal thin film formed by this fabrication method has a performance higher than a related art polycrystalline thin film and is suitable for fabricating a device having stable characteristics. The single crystal thin film can be fabricated for a short-time by using laser irradiation as the heat-treatments.

Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device

Metal complexes of heterocyclic aromatic compounds

There is provided a light emitting device and a process for producing the same in that the light emission efficiency is high, the range of selection of the material is broad, and a device array of a large area can be formed. On a substrate comprising quartz glass, an n-type clad layer comprising a non-single crystal body of n-type AlGaN, a light emitting layer containing plural microcrystals comprising ZnO, and a p-type clad layer comprising a non-single crystal body of p-type BN are laminated in this order. Between the n-type clad layer and the p-type clad layer an insulating layer is formed to fill the gap among the microcrystals to prevent a leaking electric current. The insulating layer is formed by oxidizing the surface of the n-type clad layer Because the light emitting layer contains the plural microcrystals having an increased crystallinity, the light emission efficiency is increased, the range of selection of the materials of the light emitting layer the n-type clad layer the p-type clad layer and the substrate is broadened, and a device array of a large area can be formed.

Light emitting device and process for producing the same

A method of fabricating a single crystal thin film includes: forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other. In this method, either the first heat-treatment or the second heat-treatment may be performed by irradiation of laser beams, preferably, emitted from an excimer laser. A single crystal thin film formed by this fabrication method has a performance higher than a related art polycrystalline thin film and is suitable for fabricating a device having stable characteristics. The single crystal thin film can be fabricated for a short-time by using laser irradiation as the heat-treatments.

SEMICONDUCTOR THIN FILM AND METHOD OF FABRICATING SEMICONDUCTOR THIN FILM, APPARATUS FOR FABRICATING SINGLE CRYSTAL SEMICONDUCTOR THIN FILM, AND METHOD OF FABRICATING SINGLE CRYSTAL THIN FILM, SINGLE CRYSTAL THIN FILM SUBSTRATE, AND SEMICONDUCTOR DEVICE

An n-type cladding layer formed of a non-single crystal body of n-type AlGaN, a light emitting layer containing a plurality of micro-crystals made from ZnO, and a p-type cladding layer formed of a non-single crystal body of p-type BN are sequentially stacked on a substrate made from quartz glass. An insulating layer is formed between the n-type cladding layer and the p-type cladding layer in such a manner as to bury spaces between the micro-crystals, to thereby prevent occurrence of leakage current. The insulating layer is formed by oxidizing the surface of the n-type cladding layer. Since the light emitting layer contains the plurality of micro-crystals improved in crystallinity, it is possible to enhance the emission efficiency, to extend the selection range of each of materials for forming the light emitting layer, n-type cladding layer, p-type cladding layer, and substrate, and to form a device array on a common substrate having a large area.

Light emitting device, production method thereof, and light emitting apparatus and display unit using the same

Disclosed are a method manufacturing a crystalline semiconductor material capable of improving the crystallinity and a method of manufacturing a semiconductor device using the same. An amorphous film made of silicon (Si) is formed on a substrate with a protective film inbetween. Then, a short-wavelength energy beam is irradiated to the amorphous film as a first heat treatment, thereby forming a crystalline film made of quasi-single crystal. Subsequently, another short-wavelength energy beam is irradiated to the crystalline film as a second heat treatment in order to selectively fuse and re-crystallize only the grain boundary of the crystalline film and the neighboring region. As a result, a crystalline film with excellent crystallinity can be obtained.

Method of manufacturing crystalline semiconductor material and method of manufacturing semiconductor device

An image processing apparatus capable of extracting widely viewed features of an entire image and speedily performing image processing, and a method and an information recording medium for such processing. Image data of an original image is obtained by imaging the entire original image with an image pickup unit at a time. An amplitude distribution of a signal is obtained from the image data by fast Fourier transform performed by a fast Fourier transform section of a signal processing unit. An amplitude replacement section replaces the amplitude distribution with a predetermined function using the distance from a center of a frequency plane as a parameter. An inverse fast Fourier transform section forms an image corresponding to the original image by inverse fast Fourier transform from a phase distribution of points obtained by the fast Fourier transform and from an amplitude distribution obtained by the above-described replacement.

Apparatus for and method of processing image and information recording medium

An optical device includes a plurality of first optical waveguides (or optical fibers) arranged in the horizontal direction; a plurality of second optical waveguides (or optical fibers) arranged on the same plane as the plane on which the first optical waveguides (or optical fibers) are arranged, the second optical waveguides (or optical fibers) being perpendicular or nearly perpendicular to the first optical waveguides (or optical fibers); and elements to be excited by light rays waveguided in the first and second optical waveguides(or optical fibers), the elements being arranged at crossing portions at which the first and second optical waveguides (or optical fibers) cross each other. In this display, the elements to be excited are selected for each line by intensities of light rays in the first optical waveguides (or optical fibers) functioning as horizontal waveguides (or optical fibers), and light rays in the second waveguides (or optical fibers) functioning as vertical waveguides (or optical fibers) are modulated in intensity on the basis of data signals, and the data signal light rays whose intensities have been modulated are extracted to the outside via the selected elements to be excited.

Optical device using photonics

A nonlinear coupling oscillator array is configured in such a manner that, for example, two layers in each of which a number of quantum dots as oscillators are arranged two-dimensionally are laid one on another. Adjacent quantum dots in the upper layer have tunnel coupling that exhibits a nonlinear current-voltage characteristic. The quantum dots in the upper layer receive an input of initial data/bias current, and each quantum dot in the upper layer is coupled with one quantum dot in the lower layer via a gate function having a time constant. Adjacent quantum dots in the lower layer do not interact with each other and the quantum dots in the lower layer are connected to the ground. For example, initial data are input by generating electron-hole pairs by applying light having an intensity profile corresponding to data, and injecting resulting electrons into the quantum dots of the upper layer. For example, bias current is given by applying light having an intensity profile that is constant temporally and spatially. As time elapses from the input of initial data, there appears a dynamic pattern, that is, a rotating spiral pattern, corresponding to the initial data. The data is stored in this manner.

Storage device encompassing a diffusion process and a dissipation process of information carriers and storage method thereof

While a storage region,has of many dispersed particulates (dots) (,), the surface density of the particulates (,) is set to be higher than that of structural holes (pin holes) produced in a tunnel insulating film (,), or the number of the particulates (,) in the storage region (,) is set to five or more. While a conduction region (,) is formed by a polysilicon layer (,) having a surface roughness of 0.1 nm to 100 nm, the number of the particulates (,) in the storage region (,) is set to be larger than the number of crystal grains in the conduction region (,). Even when a defect such as a pin hole occurs in the tunnel insulating film (,) and charges stored in a part of the particulates are leaked, the charges stored in the particulates formed in a region where no defect occurs are not leaked. Thus, information can be held for a long time.

Memory device and method of manufacturing the same, and integrated circuit and method of manufacturing semiconductor device

A p-type GaAs current block layer is stacked on a (100)-oriented n-type GaAs substrate, and a stripe-shaped groove is formed in the p-type GaAs current block layer to extend in the &lt;01-1&gt; direction. Side surfaces of the groove has the maximum inclination not larger than 60.degree.. The thickness of the p-type GaAs current block layer is 1.5 .mu.m or more. Stacked on the structured substrate having the current narrowed mechanism via an n-type ZnSe buffer layer are an n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, and others, to establish an index-guided inner-striped semiconductor laser having SCH structure and CSPW structure.

Semiconductor light emitting device

A semiconductor device using interference effects of electron waves passing through a multichannel, wherein the multichannel is formed by a Dirac-delta-doped layer. A method of manufacturing a semiconductor device comprising the steps of: selectively forming a region of a predetermined crystallographic orientation onto a semiconductor substrate; and alternately growing the first semiconductor layer and the second semiconductor layer whose electron affinity is smaller than that of the first semiconductor layer onto the region of the predetermined crystallographic orientation by a vapor-phase growth method so as to have a convex shape in a manner such that an area of an upper layer is smaller. A semiconductor device in which a channel portion comprising a zigzag fine line is provided between a source and a drain.

Quantum interference transistor

A light emitting element having a semiconductor substrate having {100} crystal surface as a major surface, a light emitting element formed on the semiconductor substrate, a growth blocking layer formed on a resonator end face of the light emitting element, a regrown layer formed on the light emitting element, a reflection mirror opposed to the resonator end face, a first electrode in contact with said semiconductor substrate, and a second electrode formed on the regrown layer, in which the regrown layer is made of the same material as that of the reflection mirror and the reflection mirror is formed of a semiconductor formed of {110} crystal surface epitaxially grown.

Apparatus for semiconductor laser

Growing community of inventors

Chiba, Japan

Yoshifumi Mori