Hitachi Microcomputer Engineering, Ltd.

Hatachi Ltd

Yoshiaki Yoshiura

Shigeru Shimada

Nozomi Horino

Osamu Tsuchiya

Yoku Kaino

Shozo Hosoda

Akihiro Tomozawa

Herein disclosed is a process of fabricating a semiconductor integrated circuit device, in which there is formed between a conductive layer prepared by covering a polycrystalline silicon layer with either a layer containing a refractory metal of high melting point, i.e., a refractory metal layer or a silicide layer of the refractory metal and a first insulating film made of phosphosilicate glass flowing over said conductive layer containing the refractory metal, a second insulating film preventing the layer containing a refractory metal from peeling from the polycrystalline silicon layer by the glass flow. The second insulating film is formed by deposition to have a thickness not smaller than a predetermined value.

Process of fabricating a semiconductor insulated circuit device having a

Growing community of inventors

Tanashi, Japan

Yoshiaki Yoshiura