Other

Hitachi, Ltd.

Hitachi Ulsi Engineering Corp.

Hitachi Microcomputer System, Ltd.

Yoshiaki Yoshiura

Hiroyuki Uchiyama

Masayuki Suzuki

Shinji Nishihara

Hiromi Abe

Masashi Sahara

Shinichi Ishida

Hideaki Tsugane

Sonoko Tohda

A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

Semiconductor integrated circuit device and method for making the same

A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminium film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

Method for making semiconductor integrated circuit device having

Growing community of inventors

Ushiku, Japan

Yoshiaki Yoshiura