Hitachi, Ltd.

Hitachi-high-technologies Corporation

Hitachi Cable, Inc.

Hitachi Haramachi Semi-conductor, Ltd.

Yoshiaki Yazawa

Kinya Mitsumoto

Kazuki Watanabe

Masao Kamahori

Takahiro Nagano

Masanori Odaka

Nobuaki Miyakawa

Hideaki Uchida

Shinji Nakazato

Masataka Minami

Atsuo Watanabe

Atsushi Hiraishi

Takahide Ikeda

Ken Tsutsui

Terunori Warabisako

Tsuyoshi Uematsu

Ryo Nemoto

Junko Minemura

Hiroyuki Ohtsuka

Hideki Kambara

Yasushi Goto

Yoshinori Miyamura

Naohiro Momma

Shin-ichi Muramatsu

Yutaka Kobayashi

Ken Takei

Makoto Torigoe

Mitsuo Usami

Hideyuki Noda

Hiroshi Yoshigi

Kazunori Okano

Kunio Harada

Takashi Anazawa

Fumihito Oka

Chihiro Uematsu

Tatsuya Kamei

Kenko Uchida

Tomoyuki Sakai

Kouichi Uesaka

Akira Fukami

Satoshi Ozawa

Akira Sato

Takahide Yokoi

Yoshikazu Saito

Takehiko Hasebe

Rena Akahori

Maki Shimoda

Tadashi Oonishi

Shinichi Muramatsu

Shoichi Ozeki

Takeshi Kitatani

Yasushi Minagawa

Susumu Takahashi

Toji Mukai

Yukinori Kunimoto

A nucleic acid amplification method includes ligating a double-stranded adapter () containing adapter DNA strands capable of forming a folded structure to a double-stranded DNA () containing a target DNA sequence () to prepare a cyclic DNA template composed of double-stranded DNA containing a nick (). A 3'-end elongation reaction is performed using a strand-displacement DNA polymerase from the nick () as an origin, thereby producing a concatemer () in which a plurality of the target DNA sequences () and the adapter DNA strands capable of forming the folded structure are linked in series as a single-stranded DNA. The concatemer () contains a plurality of the target DNA sequences () suitable for nucleotide sequence analysis and has a folded shape such that it takes the form of a ball due to its folded structure.

Nucleic acid amplification method

Disclosed is a biomolecular detection device that can be used easily, at a low operating cost, and with a detection probe that can be immobilized easily. Using an insulated gate field effect transistor having a conductive electrode on the gate insulator between a source and a drain, a probe for detecting biomolecules is immobilized on the surface of the conductive electrode. For analysis, a conductive electrode on which a probe for detecting biomolecules is immobilized on the surface, and a reference electrode are placed in the sample solution in the analytical cell, an alternating current voltage is applied from a power source to the reference electrode and the electrical characteristics of the insulated gate field effect transistor that changes before and after binding of the measurement target substance such as DNA and proteins included in the sample solution with a probe for detecting biomolecules, namely the changes in the current values running between the source and the drain, are detected.

Apparatus and method for measuring biological material

There is provided a simple, inexpensive reaction analysis kit and system capable of performing highly sensitive, quantitative measurement. A chemical luminescence reaction is employed and a sensor element is used to detect the reaction in a highly sensitive manner. That is, a reaction detection plate is used to transmit a signal detected in the sensor element via a reader coil and a reader and then analyze the reaction. The reaction detection plate has a) a membrane, b) a first antibody impregnated section that is disposed such that it faces the membrane and holds a first labeled antibody that specifically binds to a substance to be analyzed, c) a second antibody immobilized section that is provided in part of the membrane and has an immobilized second antibody, the second antibody specifically binding to the substance to be analyzed, and d) a sensor element that is disposed such that it faces the second antibody immobilized section and includes a light detector and a signal transceiver.

Analysis kit for living organism and chemical reaction

In an RFID system including RFID tags each incorporating a sensor, accuracy of measurement by the sensor can be improved. For example, when measurements are performed several times by using RFID tags each incorporating a sensor unit, generation of a carrier directed from an RFID reader/writer to the RFID tags is stopped for a predetermined period every time when a measurement ends. By this means, the chip temperature of the RFID tag increased due to power consumption in each measurement can be reduced to, for example, ambient temperature every time when a measurement ends. Therefore, an error in measurement by the sensor unit can be reduced, thereby achieving accurate measurement.

RFID tag, RFID reader/writer, RFID system, and processing method of RFID system

A wireless sensor chip suitable for the compact, high-sensitive, and low-cost examination apparatus for easily examining a biological material such as gene at low cost is provided. A sensor chip is formed on an SOI substrate, and an n type semiconductor layer on which a pMOS transistor is formed and a p type semiconductor layer on which an nMOS transistor is formed are isolated by a pn junction. Therefore, the p type semiconductor layer at the outermost portion (chip edge portion to be in contact with solution) is set to floating, and the maximum potential and the minimum potential of the chip are supplied to an n type semiconductor layer and a p type semiconductor layer inside the outermost portion, respectively. Also, the chip is covered with an ion impermeable insulating film for reducing the penetration of positive ions through the oxide layer.

Examination apparatus for biological sample and chemical sample

The present invention intends to prevent the communication distance from becoming shorter with a reduction in size of a coil antenna to the chip size and with a consequent decrease of an induced voltage. According to the present invention there is provided a semiconductor chip having a coil antenna and a circuit surface and adapted to transmit and receive signals by radio to and from an external device. The semiconductor chip has a configuration for increasing an electromagnetic coupling coefficient between the coil antenna and the external device. According to a concrete example thereof, a magnetic material is disposed, the coil antenna is formed by a stacked structure comprising plural conductor layers and insulating layers superimposed one on another, or the coil antenna is disposed outside an external form of a circuit of the semiconductor chip.

Semiconductor chip with coil antenna and communication system

To augment the temperature dependence of the voltage used to detect temperature in a semiconductor integrated circuit device having a temperature detection function, the operating power supply voltage of the semiconductor integrated circuit device needed to be enhanced. It becomes possible for such a semiconductor integrated circuit device to generate a voltage of great temperature dependence, even under a low operating power supply voltage, by including: a temperature-to-current converter which outputs a first electric current proportional to temperature; a current generator which outputs a second electric current having extremely small temperature dependence; a current subtracter which outputs a third electric current proportional to a differential current obtained by subtracting the second electric current from the first electric current; and a current-to-voltage converter which converts the third electric current into a voltage.

Semiconductor integrated circuit device and a contactless electronic device

A measuring system enabled to simultaneously start measurement by a plurality of transponders by communication between a reader/writer and a plurality of transponders each with a built-in sensor is to be provided. In addition to an identifier SID intrinsic to a sensor and a chip identifier TID intrinsic to a transponder chip, a unique identifier UID combining the sensor SID and the chip TID is provided in each transponder. A reader/writer, in designating a transponder and transmitting a measurement command to it, invalidates the chip TID out of the UID of each transponder, validates only information regarding a sensor function, and transmits measurement commands including action commands unique to each type of sensor.

Transponder and a sensing system using the transponder

A small sized, cost-effective genetic testing apparatus that provides high sensitivity testing, for performing genetic testing simply and at low cost. An optical sensor array for the apparatus and method for luminometric assay comprises a means that simultaneously selects 2 pixels and detects minute amounts of chemiluminescence by obtaining the differential output of the respective signals.

Apparatus and method for luminometric assay

A system and method are provided for detecting biological and chemical material. To measure biological materials such as genes easily at low costs, the device for implementing a small-sized, high sensitive, economical measurement apparatus is provided. Probes appropriate for target biological materials are fixed on a chip, on which a sensor, identification number, and radio communication function are implemented, the captured targets are detected by the sensors, and the result of sensing are transferred to an external control unit by the radio communication function. The small-sized, high sensitivity measurement apparatus for detecting biological and chemical materials such as genes and measuring physical and chemical amounts such as temperature, pressure, pH, and the like can be implemented.

System and method for detecting biological and chemical material

Concave and convex are formed on the substrate , the amorphous silicon layer is formed on the metallic catalyst dispersed and arranged in a dotted shape in the concave portion of the concave and convex, the crystal phases having respective orientations from the metallic catalyst are grown, further the crystal phases are integrated with each other by continuing heat treatment and the polycrystalline silicon layer is formed. A crystalline silicon semiconductor device and its method for fabrication which are costly advantageous and capable of efficiently forming the polycrystalline silicon layer of a predetermined thickness needed as a semiconductor device are provided. Moreover, on the substrate , the polycrystalline silicon layer oriented on the face (111), the metallic catalyst consisted of Ni, the polycrystalline silicon layer are formed in turn, further, after on which the amorphous silicon layer of the predetermined thickness is formed, Ni element is diffused within the amorphous silicon layer from the metallic catalyst layer by performing heat treatment, and thereby crystallizing the amorphous silicon layer into the polycrystalline silicon layer

Crystalline silicon semiconductor device and method for fabricating same

To form an impurity diffusion layer on only one side of a semiconductor substrate at least one semiconductor substrate and at least one diffusion protecting plate are put close to each other and a first impurity diffusion is perfomed on them, or at least one semiconductor substrate and at least one diffusion protecting plate are put close to each other and a first impurity diffusion is performed on them and then the semiconductor substrate and the diffusion protecting plate are arranged such that those sides on which the impurity diffusion has been performed face each other and a second impurity diffusion is performed. The diffusion protecting plate may be replaced by a semiconductor substrate. The first and second impurity diffusions may be performed using an impurity of the same conductivity type.

Photovoltaic device and making of the same

A light concentrator photovoltaic module includes a medium having a light receiving plane, a plurality of photovoltaic elements arranged in a spaced relationship with the light receiving plane, and a light reflecting plane for conducting light incident upon the light receiving plane but is not directly received by the photovoltaic elements to the photovoltaic elements. The light reflecting plane has a structure as viewed on a cross section in a plane transverse to the module light receiving plane and traversing adjacent two photovoltaic elements and a light reflecting member therebetween such that the light reflecting plane includes, at least two first inclined planes and at least two second inclined planes, the first inclined planes being rightwardly ascending while the second inclined planes are leftwardly ascending, respectively, at least two first inclined planes being arranged on a right side of a middle point of a distance between the adjacent two photovoltaic elements while at least two second inclined planes being arranged on a left side of the middle point.

Light concentrator photovoltaic module method of manufacturing same and light concentrator photovoltaic system

Disclosed is a photovoltaic module including a plurality of concentrators each having a light-incident plane and a reflection plane, and photo detectors. Each photo detector is in contact with one of the concentrators. The module is capable of effectively trapping light and effectively generating power throughout the year even if the module is established such that sunlight at the equinoxes is made incident on the light-incident planes not in a perpendicular manner but instead obliquely, for example, in the case where the module is established in contact with a curved plane of a roof, or the like. In this module, each concentrator is formed into such a shape as to satisfy a relationship in which the light trapping efficiency of first incident light tilted rightwardly from the normal line of the light-incident plane in the cross-section including the light-incident plane, reflection plane and photo detector is larger than the light trapping efficiency of second incident light tilted leftwardly from the normal line in the above cross-section. Also, these concentrators are arranged in one direction.

Photovoltaic device, photovoltaic module and establishing method of photovoltaic system

A light receiving element having excellent characteristics, including high sensitivity and high response speed, can be achieved by a light element comprising unit structures each having two pn junction semiconductor layers, and a lightly doped semiconductor layer having low impurity density, lower than those of the p-type regions and the n-type regions of the two pn junction semiconductor layers, and which is sandwiched between the two pn junction semiconductor layers. The p-type regions of the pn junction semiconductor layers are disposed opposite to each other on opposite sides of the lightly doped semiconductor layer, respectively, and the n-type regions of the pn junction semiconductor layers are disposed opposite to each other on the opposite sides of the lightly doped semiconductor layer, respectively. In a method of fabricating such a light receiving element, using controlled shutters or an ion beam apparatus, the layers are formed of optimum semiconductors, in an optimum thickness and in optimum impurity densities. In this structure, photogenerated carriers move mainly through the lightly doped semiconductor layer. Therefore, the lifetime of the carriers is increased, and the drift mobility of the carriers is enhanced, so that the light receiving element is able to function with a high sensitivity at a high response speed.

Light receiving element and a method of fabricating the same

Growing community of inventors

Nishitokyo, Japan

Yoshiaki Yazawa