Semiconductor Energy Laboratory Co., Ltd.

Mitsubishi Gas Chemical Company, Inc.

Nec Corporation

Renesas Electronics Corporation

Nec Electronics Corporation

Komatsu Corporation

Ulvac, Inc.

Komatsu Zenoah Co.

Mitsubishi Electric Corporation

Photonics Electronics Technology Research Association

Denka Company Limited

Yoshiaki Yamamoto

Koichiro Tanaka

Atsuo Isobe

Hiroshi Horikoshi

Shunpei Yamazaki

Hideto Ohnuma

Tatsuya Usami

Motomu Kurata

Keiji Sakamoto

Daigo Ito

Kenichiro Makino

Yuko Shimizu

Junichiro Sakata

Shinya Sasagawa

Daisuke Matsubayashi

Takahiro Kawakami

Yutaka Okazaki

Takashi Hamada

Tetsuya Kakehata

Naoto Yamade

Masaharu Nagai

Shinichi Watanuki

Takatsugu Omata

Hiroyuki Kunishima

Masaru Wakabayashi

Tatsuya Futami

Kenji Kanemaru

Yasutaka Nakashiba

Junya Maruyama

Koji Dairiki

Tomoaki Moriwaka

Toshiyuki Hirota

Kohei Yokoyama

Ken Ozawa

Tsuyoshi Horikawa

Chihaya Adachi

Kouhei Takemura

Tomoko Tamura

Susumu Okazaki

Keizo Kinoshita

Takahito Oyamada

Kazuhiko Amakawa

Shuta Ishikawa

Tohru Mogami

Kazufumi Tanaka

Yoshihiko Nishimori

Hiroko Shiroguchi

Daisuke Ohgarane

Kazutoshi Kurahashi

Miki Katayama

Masahiro Tosen

Yosuke Imagawa

Yasuyuki Arai

Tomoya Aoyama

Masaya Kawano

Yukie Suzuki

Toshiyuki Takewaki

Hiroshi Yoshida

Shuji Ebata

Taiga Muraoka

Kazuto Ikemoto

Masatake Tamaru

Taketo Maruyama

Atsushi Okamoto

Hideyuki Sato

Yoichi Iikubo

Akinobu Horita

Hiroko Yamamoto

Takamasa Ito

Kengo Tsukahara

Yousuke Imagawa

Toshikatsu Mitsunaga

Hiroyuki Tanagi

Yoshinori Kanamori

Kazuo Aizawa

Akira Nakajima

Takehisa Miyaya

Takuya Okamura

Nobuo Hironaga

Satohiro Okayama

Koichi Ito

Hitoshi Ikeda

Tomoki Ohnishi

Kouichi Tamagawa

Kota Kinjo

Nami Kosaka

Akiyoshi Kimura

Yosuke Tate

Yosuke Jimbo

Kenji Eto

Yoichi Abe

Yuko Sameshima

Young-Doo Kim

Yoshinori Obise

Daisuke Yoshimura

A hot melt adhesive composition which can realize moderate adhesive strength with respect to the adherend when porous substrate is used, the composition, including: a styrene-based block copolymer; a tackifier; and a plasticizer; wherein: the styrene-based block copolymer is a styrene-butadiene block copolymer and a butadiene portion thereof is partially hydrogenated; the tackifier is contained by 65 to 190 parts by mass with respect to 100 parts by mass of the styrene-based block copolymer; and the plasticizer is contained by 0.1 to 24 parts by mass with respect to 100 parts by mass of the styrene-based block copolymer.

Hot melt adhesive composition, adhesive tape, and method for producing adhesive tape

A vacuum processing apparatus of the present invention is a vacuum processing apparatus which performs plasma processing. The vacuum processing apparatus includes an electrode flange, a shower plate, an insulating shield, a processing chamber in which a processing-target substrate is to be disposed, an electrode frame, and a slide plate. The electrode frame and the slide plate are slidable in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered. The shower plate is supported by the electrode frame using a support member penetrating through an elongated hole. The elongated hole is formed so that the support member is relatively movable in the elongated hole in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered.

Vacuum processing apparatus and method of cleaning vacuum processing apparatus

A series multiplex inverter includes a power conversion unit, a phase difference selection unit, a drive signal generation unit, and a drive signal output unit. The phase difference selection unit selects, from among a plurality of phase difference candidates, the phase difference between rectangular wave voltages from a plurality of single-phase inverters. The drive signal generation unit generates a plurality of drive signals that causes the different single-phase inverters to output a plurality of rectangular wave voltages sequentially out of phase by the phase difference selected by the phase difference selection unit. The drive signal output unit outputs the plurality of drive signals generated by the drive signal generation unit to the plurality of single-phase inverters.

Series multiplex inverter

A series multiplex inverter includes a power conversion unit, a drive signal generation unit, and a drive signal output unit. The drive signal generation unit generates n drive signals that cause different single-phase inverters of n single-phase inverters to output n rectangular wave voltages sequentially out of phase, where n is an integer of three or more. The drive signal output unit outputs the n drive signals to the n single-phase inverters in rotation that shifts, by p every m-fold time of half an output voltage period of the power conversion unit, the single-phase inverters corresponding one-to-one to the n drive signals in a combination of the n drive signals with different single-phase inverters of the n single-phase inverters, where m is a natural number and p is a natural number relatively prime to n or one.

Provided an optical material composition which makes it possible to design an optical material exhibiting a broad range of properties. This optical material composition contains a compound (A) represented by formula (1) and a polythiol (a), and does not contain 1,2,3,5,6-pentathiepane (b). 

Optical material composition

Provided is an optical material composition which makes it possible to design an optical material exhibiting a broad range of properties. This optical material composition contains a compound (A) represented by formula (1), 1,2,3,5,6-pentathiepane (b), and if necessary, a compound (B) represented by formula (2). The content of the compound (B) constitutes 0-30 mass % of the total mass of the composition: (In the formula, n m represents an integer which is 0-4, and n represents an integer which is 0-2).

The present invention makes it possible to provide an optical material composition containing an episulfide compound (A), a polythiol compound (B), and a photochromic compound (C). The episulfide compound (A) is preferably a compound represented by formula (1), and the polythiol compound (B) is preferably a compound represented by formula (6). (In formula (1), m represents an integer of 0 to 4, and n represents an integer of 0 to 2.) (In formula (6), n represents an integer of 4 to 20, and Rand Rmay be the same or different and represent H, SH, Calkyl groups, or Calkylthiol groups.)

Optical material composition and optical material

The present invention provides a composition for an optical material containing a ring compound (a) represented by formula (1), an episulfide compound (b), and sulfur (c), wherein the content of the ring compound (a) in the composition for an optical material is in the range of 5-70 mass %, the content of the episulfide compound (b) is in the range of 20-90 mass %, and the content of the sulfur (c) is in the range of 1-39 mass %. (In the formula, X represents S, Se or Te. a to f=0 to 3, 8&#x2265;(a+c+e)&#x2265;1, 8&#x2265;(b+d+f)&#x2265;2, and (b+d+f)&#x2265;(a+c+e).) This composition for an optical material has a high refractive index as an optical characteristic, and has sufficient heat resistance and good mold release characteristics. 

Composition for optical material and optical material using the same

The present invention can provide a method for producing 1,2,3,5,6-pentathiepane, comprising Steps A and B:

Method for producing 1,2,3,5,6-pentathiepane

The present invention provides a method for isomerizing a cyclohexanediamine, which simply and highly actively realizes an isomerization reaction of a cyclohexanediamine, without passing through a high-pressure reaction and a complicated multi-stage process. The isomerization method has an isomerization step of isomerizing a cyclohexanediamine in the presence of a compound represented by the following formula (1) and at least one selected from the group consisting of an alkali metal, an alkali metal-containing compound, an alkaline earth metal or an alkaline earth metal-containing compound. wherein Rand Reach independently represent a hydrogen atom or a monovalent group selected from the group consisting of a substituted or unsubstituted hydrocarbon group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group and an acyl group (Rand Rmay mutually bind to form a ring); Rrepresents a hydrogen atom and an n-valent group selected from the group consisting of a substituted or unsubstituted hydrocarbon group; and n represents, an integer of 1 to 10.

Isomerization method for cyclohexanediamine

An object of the present invention is to simply and highly actively realize an isomerization reaction of an industrially important compound, diaminodicyclohexylmethane, without passing through a complicated multi-stage process. A method for isomerizing a diaminodicyclohexylmethane, including an isomerization step of isomerizing the diaminodicyclohexylmethane in the presence of an imine compound represented by the following general formula (1) and at least one compound selected from the group consisting of an alkali metal, an alkali metal-containing compound, an alkaline earth metal and an alkaline earth metal-containing compound: wherein Rand Reach independently represent a hydrogen atom or a monovalent group selected from the group consisting of a substituted or unsubstituted hydrocarbon group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group and an acyl group (Rand Rmay mutually bind to form a ring); Rrepresents a hydrogen atom or an n-valent group selected from the group consisting of substituted or unsubstituted hydrocarbon groups; and n represents an integer of 1 to 10.

Isomerization method for diaminodicyclohexylmethane

Disclosed is an optical semiconductor device which can be improved in light shift precision and restrained from undergoing a loss in light transmission. In this device, an inner side-surface of a first optical coupling portion of an optical coupling region and an inner side-surface of a second optical coupling portion of the region are increased in line edge roughness. This manner makes light coupling ease from a first to second optical waveguide. By contrast, the following are decreased in line edge roughness: an outer side-surface of the first optical coupling portion of the optical coupling region; an outer side-surface of the second optical coupling portion of the region; two opposed side-surfaces of a portion of the first optical waveguide, the portion being any portion other than the region; and two opposed side-surfaces of a portion of the second optical waveguide, the portion being any portion other than the region.

Optical semiconductor device, and method for producing the same

An isomerization reaction of a predetermined compound, without passing through a high pressure reaction and a complicated multi-stage process. The isomerization method includes isomerizing, 1,3,3-trimethyl-1-(aminomethyl)aminocyclohexane in the presence of a compound represented by formula (1) and at least one compound selected from no alkali metal, an alkali metal-containing compound, an alkaline earth metal and an alkaline earth metal-containing compound: 

Isomerization method for 1,3,3-trimethyl-1-(aminomethyl)aminocyclohexane

A semiconductor device is provided with an insulating layer formed on a base substrate, an optical waveguide composed of a semiconductor layer formed on the insulating layer, and an insulating film formed along an upper surface of the insulating layer and a front surface of the optical waveguide. A peripheral edge portion of a lower surface of the optical waveguide is separated from the insulating layer, and the insulating film is buried between the peripheral edge portion and the insulating layer.

Semiconductor device and method for manufacturing the same

A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer. The second and third regions each include a region containing an element N (N is phosphorus, argon, or xenon).

Semiconductor device, manufacturing method thereof, and electronic device

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Kanagawa, Japan

Yoshiaki Yamamoto