Pioneer Corporation

Pioneer Electronic Corporation

Pioneer Electric Corporation

Yoshiaki Watanabe

Kiyofumi Chikuma

Nong Chen

Kiyoshi Takei

Satoshi Miyaguchi

Koyoshi Takei

Isamu Akasaki

Atsushi Onoe

Hiroshi Amano

A DFB type semiconductor laser device including a laser substrate, a grating layer, an insulating layer and an electrode layer, which are laminated in the given order. The insulating layer includes a through groove or grooves extending to the grating layer in a direction in which a resonator of the laser device is formed, and the electrode layer contacts the grating layer and a clad layer.

Distributed feedback type semiconductor laser device

A semiconductor laser includes an active layer made of semiconductor; a ridge stripe having a cladding layer formed on the active layer and a contact layer formed on the cladding layer to protrude from the active layer; a pair of gratings each having a periodic structure in a longitudinal direction of the ridge stripe having a plurality of grooves each extending from side walls of the ridge stripe on flat portions in both sides of the ridge stripe; and absorbing layers covering the surfaces of the grooves of gratings to absorb excited light.

Ridge type semiconductor laser of distributed feedback

There is provided a method of manufacturing a ridge type LC-DFB semiconductor laser in which a laser substrate having a cladding layer made of a material for a ridge stripe formed on an active layer made of semiconductor. A stripe mask is formed on the cladding layer to form two lateral flat portions from the cladding layer, by a selective wet etching, so as to form a ridge stripe protruding therefrom and having a flat top portion at which the stripe mask capped. A grating mask is formed on the two lateral flat portions, side walls of the ridge stripe and the stripe mask. The grating mask has a periodic structure in the direction in which the ridge stripe extends. The two lateral flat portions and the side walls of the ridge stripe are dry-etched through the grating mask and then the two lateral flat portions and the side walls of the ridge stripe are wet-etched to form a grating of the material for the ridge stripe on the two lateral flat portions, the side walls of the ridge stripe and the active layer, so as to define a bracket grating portion adjacent to the ridge stripe.

Ridge type semiconductor laser of laterally-coupled distributed feedback and method of manufacturing the same

A description is provided of a ridge-structure DFB semiconductor laser and a method of manufacturing the laser wherein an optical absorption loss by a metal electrode formed on a grating can be avoided. The DFB semiconductor laser includes: a ridge protruding from flat portions of a cladding layer which is formed on an active layer, the ridge includes a cladding layer and a contact layer sequentially formed on the active layer; a plurality of metal strips having a predetermined periodicity along a longitudinal direction of the ridge and extending from a surface of at least one of the flat portions to a top of the ridge; and an insulating layer formed on the plurality of metal strips at the top of the ridge.

Ridge-structure DFB semiconductor laser and method of manufacturing the same

An optical transmitter and receiver module de-multiplexes a multi-wavelength optical signal into at least an optical signal of one wavelength band, and receives and transmits the signal. The module includes a first substrate, with a cleavage plane, for supporting input and output wave guides which intersect each other at a portion on the cleavage plane and extend from the portion of intersection at an equal angle with respect to normal at the portion on the cleavage plane. The module also includes an interference filter that is in contact with the cleavage plane on the portion of intersection of the input and output wave guides of the first substrate. Further, the module includes a second substrate, with a cleavage plane in contact with the interference filter, for supporting a transmit/receive wave guide having receiver and transmitter wave guides which extend from the vicinity of the portion of intersection and are separated from each other.

Optical transmitter/receiver module and method of manufacturing the same

An optical transmitter and receiver module de-multiplexes a superimposed optical signal into which at least a first and second wavelength band are superimposed, and receives and transmits an optical signal of the first wavelength band. The module includes an input/output wave-guide having an outer end portion and inner end portion for inputting superimposed optical signals, a receiver portion for receiving optical signals of the first wavelength band, an output wave-guide having an outer end portion and inner end portion for outputting optical signals of the second wavelength band, and a transmitter portion for transmitting the optical signals of the first wavelength band.

Optical transmitter and receiver module which demultiplexes a superimposed optical signal

A method for producing a distributed feedback semiconductor laser element includes the steps of forming a laser substrate, forming a ridge by etching the laser substrate, and forming a flattening layer on the ridge. A grating is then formed on the flattening layer and the grating is further transferred to the laser substrate on which the ridge is formed. The flattening layer is removed and electrodes are then formed.

Distributed feedback semiconductor laser element and method for making the same

A method for producing a semiconductor laser module is provided which enables simplifying the production process by eliminating the process of positioning the laser light emitting portion on the substrate, as well as enabling positioning an optical fiber on an appropriate position without aligning the optical fiber with the laser light emitting portion. A semiconductor laser module is fabricated through a process including a substrate preparation step for preparing a substrate including an active layer between cladding layers; a supporting groove portion formation step for forming a supporting groove portion to support an optical fiber on the substrate; and an electrode formation step for forming an electrode on a substrate surface of an opposing portion which faces the supporting groove portion.

Method for producing semiconductor laser module

A distributed feedback semiconductor laser including a semiconductor substrate having a bottom surface and a top surface; an active layer formed on the top surface of the semiconductor substrate; a ridge stripe formed on the active layer having a first surface and extending in a first direction; a periodic structure that is periodic in the first direction; a plurality of p-type electrodes formed on the first surface of the ridge stripe; and an n-type electrode formed on the bottom surface of the semiconductor substrate. The first surface of the ridge stripe is parallel with a growth plane of the active layer, the first surface having at least two different widths in a direction perpendicular to the first direction.

Distributed feedback semiconductor laser

There is provided a method of manufacturing a DFB semiconductor laser in which a laser substrate having a cladding layer which is a material for a ridge stripe stacked on an active is formed. The cladding layer as a material for a ridge stripe is etched to form a ridge stripe having flat portions on both sides thereof and a flat top portion protruding therefrom. A protective film and a resist layer are formed to cover the flat portions on both sides and the flat upper surface. A latent image of a grating having a periodic structure is formed in the direction in which the ridge stripe extends is formed on the resist layer. The resist layer is developed and the flat portions on both sides are etched to form a grating on both lateral portions and to remove the protective film. An electrode is formed on the flat top portion, the interface between the ridge strip and the electrode being a smooth surface.

Method of manufacturing non-regrowth distributed feedback ridge semiconductor

Non-regrowth distributed feedback ridge semiconductor laser and method

A method for forming a resonator in a semiconductor laser device comprises the steps of; filling with a resin a gap surrounding the side surfaces of the waveguide for a resonator other than the end-surface to be polished; polishing the end-surface and the resin surrounding it; forming a predetermined optical coating on the polished end-surface and the resin in the state of the laser waveguide and the electrode being embedded; and removing the embedding resin. Both the bending of polished end-surfaces and the entering of the thin film into the side surface of the laser waveguide is prevented so that a high smooth end-surface of mirror coating for resonator is achieved. Furthermore, any crystals are used for a substrate carrying a semiconductor laser structure with a resonator even if that crystal is of non-cleavage, according to that method.

Process for producing a resonator in a semiconductor laser device

A wavelength converting element comprises; an X or Y-out substrate made of lithium tantalate crystal or lithium niobate crystal having a major surface containing a Z-axis of the crystal; polarization inversion layers formed the major surface each extending in the Z-axis and treated by applying an electric field of direct current to the substrate wherein the electric field of direct current contains a field component toward an inverse direction of the Z-axis intersecting at an angle of .theta. in a range of 0.degree.&lt;.theta.&lt;90.degree. with respect to the Z-axis during an annealing of the substrate; and an optical waveguide intersecting with the polarization inversion layers formed and treated on the major surface of the substrate, thereby achieving deep polarization inversion layers with a fine pitch and width on a Y or X-cut surface of the crystal substrate to satisfy a high QPM condition to produce a wavelength converting element capable of direct coupling with a semiconductor laser and having a high optical converting efficiency.

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Tsurugashima, Japan

Yoshiaki Watanabe