Hitachi, Ltd.

Hitachi Tobu Semiconductor

Hitachi Chemical Company, Ltd.

Akita Electronics Co., Ltd.

Yoshiaki Wakashima

Toshio Sugano

Masayuki Watanabe

Seiichiro Tsukui

Kunihiko Nishi

Aizo Kaneda

Atsushi Nakamura

Hiroshi Suzuki

Naoki Fukutomi

Michio Tanimoto

Suguru Sakaguchi

Michiharu Honda

Takeshi Komaru

Tohru Yoshida

Kohji Nagaoka

Kohji Serizawa

Masayuki Morita

Akinari Kida

Susumu Naoyuki

Hideya Ohtani

Toshimitsu Momoi

Takashi Ono

Shuhei Sakuraba

Eiji Ooi

Kazuhisa Suzuki

Takashi Yokoyama

Yasuo Miyadera

Mikio Sato

Daisuke Makino

Akio Nishikawa

Junji Mukai

Toshio Yamazaki

Tsutomu Kitakatsu

Hideo Inayoshi

Goro Tanaka

Nobuhiko Shito

Akira Suzuki

Sumumu Tuzuku

Takeshi Funaki

Hideo Iwasawa

A substrate for use in a semiconductor package is fabricated by preparing a composite metal laminate consisting of a first metal layer, a second metal layer, and a carrier layer positioned in this order. The first metal layer has etching characteristics different to those of the second metal layer with respect to the same etchant. The first metal layer is selectively etched until the second metal layer is exposed, thereby forming pillar-like interconnections. The gap between the interconnections is then filled with a resin so as to form a resin base with interconnections. The carrier layer is removed from the second metal layer, and the second metal layer is selectively etched until the first metal layer or the resin base is exposed, thereby forming a conductive pattern on the resin base.

Substrate for use in package of semiconductor device, semiconductor package using the substrate, and methods for manufacturing the substrate and the semiconductor package

A semiconductor device fabrication process comprising an encapsulation step of carrying out encapsulation by vacuum pressure differential printing by the use of a liquid resin encapsulant containing a solvent in an amount of from 5% by weight to 50% by weight, and preferably from 25% by weight to 50% by weight. The encapsulation step comprises: printing the liquid resin encapsulant by vacuum pressure differential printing in such a way that; the encapsulant covers at least an internal connecting terminal provided on a substrate, a semiconductor chip, and a wire interconnecting the internal connecting terminal and the semiconductor chip; and that the thickness of the encapsulant lying above the wire at the highest position of the wire comes to be at least 0.8 times the thickness of the encapsulant lying beneath the wire at the same position; and curing or drying the encapsulant.

Semiconductor device and method of fabrication thereof

A semiconductor device comprising a substrate with a cavity portion for mounting a semiconductor chip is provided to achieve a high reliability and to decrease a size and a fabricating cost. The cavity portion capable of mounting the semiconductor chip (,) at the center portion of the substrate is formed by press forming with a projected portion (,) of a die (,) while adhering a press shapeable wiring body comprising a copper wiring (,) which becomes wiring material, a barrier layer (,) such as nickel alloy or the like, and a copper foil (,) which is a carrier layer, to a plastic substrate (,), so as to have wiring (,) buried into a surface of the substrate and to form a ramp between an inner connection terminal portion connecting to the semiconductor chip (,) and an external connection terminal portion connecting to an external connection terminals (,), the internal and external connection terminal portions being two edge portions of the wiring (,).

Board for mounting semiconductor element, method for manufacturing the same, and semiconductor device

In the present invention, memory chips are stuck together in stacked fashion by TAB (tape automated bonding), and a multiple memory chip and lead complex like an SOP (small out-line package) is formed of the chips and leads, whereby a memory module of high packaging density can be realized by a flat packaging technique.

Semiconductor memory module having double-sided stacked memory chip

There is a trend to increase that area of a device requiring a memory of large capacity, which is occupied by a semiconductor memory. This trend obstructs reduction of the size of the device. The present invention contemplates to provide a memory which can have a high integration, a high density and a large capacity while minimizing the mounting area. In order to achieve this memory, the TAB (Tape Automated Bonding) of the prior art is mounted on an electrically conductive connector, and a plurality of structures composed of the TAB and the connector are stacked. Moreover, the connector mounting the TAB thereon is constructed such that the independent terminals of the stacked TABs may not be shorted.

Stacked semiconductor memory device and semiconductor memory module

Semiconductor stacked device

Semiconductor device and semiconductor module with a plurality of

Semiconductor integrated circuit device and method of manufacturing the

According to the present invention, a tape carrier is prepared which comprises a power trunk line including an electric connection as a branch of a power lead for each tape carrier unit and a ground trunk line having an electric connection as a branch of a ground lead for each tape carrier unit, the power and trunk lines being continuously formed along the longitudinal direction of the tape carrier, and a lead for a control signal for establishing an electric conduction along the longitudinal direction of the tape carrier via an aging wiring for semiconductor pellets to conduct a simultaneous multipoint (gang) bonding on the tape carrier, the control signal lead being formed on the tape carrier. By mounting the semiconductor pellets having the aging wiring on the tape carrier, it is enabled to apply the power voltage and to supply the control signal to each of the plurality of the semiconductor pellets, and hence the operation test can be simultaneously conducted for the semiconductor pellets mounted on the tape carrier having an arbitrary length. This provision enables a plurality of semiconductor devices mounted on the tape carrier to be subjected to an aging, namely, a reliability test under a thermal environment and in the operating state, and hence an efficient reliability test can be achieved with an effect of the mass production. Consequently, a highly reliable semiconductor device can be provided.

Semiconductor device and tape carrier

According to the present invention, a tape carrier is prepared which comprises a power trunk line including an electric connection as a branch of a power lead for each tape carrier unit and a ground trunk line having an electric connection as a branch of a ground lead for each tape carrier unit, the power and trunk lines being continuously formed along the longitudinal direction of the tape carrier, and a lead for a control signal for establishing an electric conduction along the longitudinal direction of the tape carrier via an aging wiring for semiconductor pellets to conduct a simultaneous multipoint (gang) bonding on the tape carrier. By mounting the semiconductor pellets having the aging wiring on the tape carrier, it is enabled to apply the power voltage and to supply the control signal to each of the plurality of the semiconductor pellets, and hence the operation test can be simultaneously conducted for the semiconductor pellets mounted on the tape carrier having an arbitrary length. This provision enables a plurality of semiconductor devices mounted on the tape carrier to be subjected to an aging, namely, a reliability test under a thermal environment and in the operating state, and hence an efficient reliability test can be achieved with an effect of the mass production. Consequently, a highly reliable semiconductor device can be provided.

Semiconductor device and process for producing the same, and tape

In a semiconductor memory device comprising semiconductor memory elements having such a degree of integration in memory circuits as to produce soft errors by incident .alpha.-rays derived from a packaging material and a package which packages the memory elements and is made from the packaging material, when an .alpha.-rays shielding layer made from a resinous material, which may contain one or more high-purity fillers, containing a total amount of 1 part per billion or less of uranium and thorium is interposed between the memory elements and the package, the generation of soft errors is reduced remarkably.

Semiconductor memories with .alpha. shield

An apparatus for pre-heating resin tablets comprising a resin tablet heater, a switch for setting a reference softening degree and a softening degree detector for the resin tablet. The detector includes a pressure source and a pressure transmitting member coupled to the pressure source and adapted for contact with the resin tablet. The pressure transmitting member is movable a distance representative of the softening degree of the resin tablet being heated due to deformation of the resin tablet.

Apparatus for pre-heating resin tablet

Method of making a semiconductor device which includes applying a solution of a heterocyclic ring-containing polymer in an organic solvent to a desired surface of a semiconductor body and removing the organic solvent from the solution by heat thereby to form a coating of a polymer on the surface, wherein the polymer is a reaction product of a diamine represented by the formula: ##STR1## with a tetracarboxylic acid or anhydride of it. Since the coating exhibits good thermal stability and good electrical properties when applied to the surface of the semiconductor, it is useful as a passivating film.

Method of making a semiconductor device

In a semiconductor device, the surface of a semiconductor element is covered with a silicone varnish in which the side chain radical ratio between methyl radicals and phenyl radicals is 20:1 or greater, whereby the element is effectively shielded from the external moisture.

Semiconductor device

In sealing at least a semiconductor element portion of a semiconductor device by the use of a resin, the semiconductor element is covered with a stabilizer or with a resin containing the stabilizer. The stabilizer is adapted to check the migration of a mobile substance such as hydrochloric acid and a mobile ion such as chlorine ion existent within the resin. Owing to the fixation of the ion, the electrical characteristics of the semiconductor device are prevented from being degraded, and constituent parts in the semiconductor device are prevented from being corroded.

Method of manufacturing semiconductor device and resulting product

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Kawasaki, Japan

Yoshiaki Wakashima