Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Yoshiaki Tsunoda

Hideo Matsuda

Takashi Fujiwara

Yasunori Usui

Masatoshi Kanaya

A method of manufacturing a semiconductor device with overvoltage self-protection of punchthrough type comprises the following steps.

Method of manufacturing semiconductor device with overvoltage

A semiconductor device has a main GTO thyristor section, an auxiliary GTO thyristor section and a MOS transistor section. The main GTO thyristor section is turned on and off in accordance with a gate signal supplied to its gate terminal. The auxiliary GTO thyristor section supplies an igniting signal to the gate of the main GTO thyristor in accordance with an optical signal. The MOS transistor supplies an extinguishing signal to the gate of the main GTO thyristor section in accordance with an optical signal supplied to it.

Semiconductor device turned on and off by light

A light-triggered semiconductor device comprising a light-triggered semiconductor chip housed in an airtight package and a light guide connected to a light-sensitive area of the semiconductor chip, wherein that end face of the light guide which faces the semiconductor chip is chosen to have a larger diameter than the light-sensitive area formed on the main surface of the semiconductor chip, and is connected to the light-sensitive area through an elastic transparent material preliminarily fixed to the light-sensitive area.

Growing community of inventors

Kawasaki, Japan

Yoshiaki Tsunoda