Sony Semiconductor Solutions Corporation

Sony Corporation

Toyota Motor Corporation

Tokyo Diamond Tools Mfg. Co., Ltd.

Yoshiaki Tashiro

Yorito Sakano

Yusuke Oike

Hongbo Zhu

Jun Ogi

Ryosuke Matsumoto

Atsushi Okuyama

Yasufumi Miyoshi

Keiichi Nakazawa

Takahiro Toyoshima

Yukari Takeya

Atsushi Horiuchi

Takafumi Takatsuka

Kazuki Hizu

Toshiyuki Nishihara

Frederick T Brady

Tsutomu Imoto

Sumio Kamiya

Yuji Yoshida

Hideo Nomura

Tomomasa Watanabe

Yoshiyuki Ishii

Sungin Hwang

Satoko Iida

Fumiko Shiga

Noboru Otake

Hiroshi Eda

Hisao Iwase

Libo Zhou

Adarsh Basavalingappa

Muriel Cohen

Masaaki Kenmochi

Teruki Yamashita

Cristian Tivarus

A sensor chip including a resistor and a backside illuminated single photon avalanche diode (SPAD) that is connected to the resistor; and a sensor including a sensor chip with a resistor and a backside illuminated SPAD that is connected to the resistor. The backside illuminated SPAD including an anode, a cathode, and a multiplication structure.

Backside illuminated single photon avalanche diode

A light-receiving apparatus () includes a counting unit (), a setting unit (), and an acquiring unit (). The counting unit is configured to measure a detection number of times that represents the number of times incidence of a photon to a light-receiving element has been detected within an exposure period and to output a counted value. The setting unit is configured to set a cycle of updating time information in accordance with an elapsed time during the exposure period. The acquiring unit is configured to acquire the time information indicating a time at which the counted value reaches a threshold before the exposure period elapses.

Light-receiving apparatus with cycle setting according to illumination categories for updating luminance value

A light detecting device includes a photoelectric conversion unit configured to generate a photoelectric charge, a first charge holding unit that includes a first capacitive element and holds the photoelectric charge generated by the photoelectric conversion unit, a second charge holding unit configured to hold the photoelectric charge transferred from the first charge holding unit, a first transistor arranged on a wiring connecting the first charge holding unit and the second charge holding unit to transfer the photoelectric charge held in the first charge holding unit to the second charge holding unit, and a second transistor configured to cause a pixel signal of a voltage value corresponding to a charge amount of the photoelectric charge held in the second charge holding unit to appear on a signal line.

Pixel circuit configured with global shutter ensuring sufficient saturated charges

To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

Imaging device and signal processing device

Light-receiving apparatus with cycle setting according to photon count determinations

Provided is a solid-state imaging apparatus, an electronic device, and a driving method for obtaining an output signal irrespective of temperature-induced changes in characteristics. The solid-state imaging apparatus includes a pixel array section including a first pixel that has a first photoelectric converting section and obtains an output signal with logarithmic characteristics, and a second pixel that obtains a temperature detection signal for detecting temperature, the first and the second pixels being arranged in a matrix pattern, and a correcting section that corrects the output signal on the basis of temperature information obtained from the temperature detection signal.

Solid-state imaging apparatus, electronic device, and driving method

Provided is an optical shaping apparatus that includes a light source that outputs diffusion light or converging light as outgoing light, an optical function section that is disposed in an optical path of the outgoing light and modulates the optical path or a phase of the outgoing light, and a sensor that acquires positional data of an object surface. The optical shaping apparatus further includes a controller that controls operation of the optical function section on the basis of the positional data and coordinate data of a shaped article, to apply modulated light generated by the optical function section to the object surface.

Optical shaping apparatus and method of producing shaped article

The present disclosure relates to a solid-state imaging device, an electronic apparatus, and a driving method for reducing power consumption of pixels, and achieving an increase in the number of pixels. Provided is a solid-state imaging device including a pixel array unit that includes pixels arranged in a matrix. From each of the pixels an output signal indicating a logarithmic characteristic is acquired. Each of the pixels includes: a photoelectric conversion unit; a reset transistor that resets the photoelectric conversion unit in accordance with a reset signal; a first amplification transistor that amplifies a signal received from the photoelectric conversion unit; a selection transistor that selects a signal received from the first amplification transistor in accordance with a selection signal; a second amplification transistor that amplifies a signal received from the selection transistor, and applies the amplified signal to a vertical signal line; and a bias transistor that functions as a current source. The first amplification transistor and the second amplification transistor are each connected to a power source voltage. For example, the technology according to the present disclosure is applicable to a logarithmic sensor in a solar cell mode.

Solid-state imaging device, electronic apparatus, and driving method

The present disclosure relates to a solid-state imaging element and an electronic apparatus which are capable of utilizing almost all photoelectrically converted charges for signals during high capacitance. A pixel includes a selection transistor that is disposed on a drain side of an amplification transistor and selects a read-out row, the selection transistor selects the read-out row after reset by a reset transistor, and a transfer transistor performs reference potential read-out during high capacitance prior to reference potential read-out during low capacitance. For example, the present disclosure is applicable to a lamination-type solid-state imaging element.

Solid-state imaging element and electronic apparatus

Imaging device

A solid-state image pickup device and an electronic apparatus that enable the performance of a logarithmic sensor in a solar-cell mode to improve. After Signal (S) is read, a P-phase signal (N) is read in a conducted state in which RST is ON, and a P-phase signal (N') is read in a non-conducted state in which the RST is OFF. Thus, in a case where sufficient incident light illuminance is provided (Bright), S-N being the difference with respect to the P phase acquired in the conducted state in which the RST is ON, is selected and output. In a case where capacitance is insufficiently charged in a low-illuminance condition in which the incident light is less in amount (Dark), S-N&#x2032; being the difference with respect to the P phase acquired in the conducted state in which the RST is OFF, is selected and output.

Solid-state image pickup device and electronic apparatus

The present disclosure relates to a solid-state image sensing device, a drive method, and an electronic apparatus that suppress the color mixture of a phase difference detection signal to an image sensing signal. The solid-state image sensing device has a pixel area arranged with a plurality of pixels in which a first photoelectrical conversion section for photoelectrically converting a visible light of a first wavelength range and a second photoelectrical conversion section for photoelectrically converting a visible light of a second wavelength range are formed in different depths as viewed from a cross-sectional direction. Further, in each of the above-mentioned plurality of pixels, at least one of the first photoelectrical conversion section and the second photoelectrical conversion section is divided when viewed from a planar direction. The present technology is applicable to a solid-state image sensing device capable of detecting an image plane phase difference, for example.

Solid-state image sensing device, drive method, and electronic apparatus

An imaging apparatus with logarithmic characteristics includes: a photodiode that receives light; a well tap unit that fixes the potential of an N-type region of the photodiode; and a resetting unit that resets the photodiode, a P-type region of the photodiode outputting a voltage signal equivalent to a photocurrent subjected to logarithmic compression. The first potential to be supplied to the well tap unit is made lower than the second potential to be supplied to the resetting unit, so that the capacitance formed with the PN junction of the photodiode is charged when the resetting unit performs a reset operation. The present technology can be applied to unit pixels having logarithmic characteristics.

Imaging apparatus with logarithmic characteristics and method for driving the same

The present disclosure relates to a solid-state image sensing device, a drive method, and an electronic apparatus that are configured to suppress the color mixture of a phase difference detection signal to an image sensing signal. The solid-state image sensing device has a pixel area configured to be arranged with a plurality of pixels in which a first photoelectrical conversion section for photoelectrically converting a visible light of a first wavelength range and a second photoelectrical conversion section for photoelectrically converting a visible light of a second wavelength range are formed in different depths as viewed from a cross-sectional direction, and a drive section configured to execute a drive operation of reading each pixel signal having a level corresponding to charges generated in each of the first photoelectrical conversion section and the second photoelectrical conversion section from each of the above-mentioned plurality of pixels. Further, in each of the above-mentioned plurality of pixels, at least one of the first photoelectrical conversion section and the second photoelectrical conversion section is configured as divided when viewed from a planar direction. The present technology is applicable to a solid-state image sensing device capable of detecting an image plane phase difference, for example.

Growing community of inventors

Tokyo, Japan

Yoshiaki Tashiro