Mitsubishi Heavy Industries Limited

Osaki Electric Co., Ltd.

Corning Incorporated

Mitsubishi Jukogyo Kabushiki Kaisha

National Institute of Advanced Industrial Science and Technology

Honda Motor Co., Ltd.

Hondalock Mfg. Co., Ltd.

Yoshiaki Takeuchi

Hiroshi Mashima

Tatsufumi Aoi

Akira Yamada

Takashi Shoji

Masayoshi Murata

Akemi Takano

Keisuke Kawamura

Hiroki Takahashi

Yasuyuki Mizushima

Juro Kikuchi

Satoshi Uchida

Hideo Yamakoshi

Katsuhisa Yamada

Hiroshi Nishijima

Masaru Kodama

Kenjiro Hasui

Koji Satake

Tatsuji Horioka

Kazutoshi Hamamoto

Satoshi Sakai

Takeshi Konno

Masaru Watanabe

Tetsuro Shigemizu

Kengo Yamaguchi

Koichi Nozoe

Shinya Nakano

Masakazu Kadota

Shigenori Tsuruga

Tadashi Onozuka

Michio Kondo

Toshihiko Ono

Tatsuyuki Nishimiya

Kazuyuki Kuriyama

Hirohisa Yoshida

Tsuguhito Ichiriki

Tomoya Yoshizawa

Kenji Tagashira

Nobuki Oka

Sadanori Watarai

Yutaka Nakanishi

Eishiro Sasakawa

Shoji Morita

Takuya Matsui

Nobuki Yamashita

Yoshikazu Nawata

Masatoshi Hisatome

Kengou Yamaguchi

Syouji Morita

Satoshi Kokaji

Toshio Sasaki

Shinsaku Dobashi

Kouichi Muro

Yasuhiro Yamauti

Hiromu Takatuka

Ikuo Fukuzaki

Koichi Asakusa

Shuichi Ishibashi

Hidekuni Kawassaki

Akira Dohi

A process for producing a photovoltaic device that can improve the power generation characteristics of a solar cell having a heterojunction composed of a p-type crystalline Ge (substrate), an i-type amorphous silicon semiconductor layer, and an n-type amorphous silicon semiconductor layer. A process for producing a photovoltaic device () comprising a heterojunction cell () prepared by sequentially stacking an i-type amorphous silicon semiconductor layer () and an n-type amorphous silicon semiconductor layer () on top of a substrate (p-type crystalline Ge ()), the process comprising a PHexposure treatment stage of adjusting the temperature of the substrate (), from which a surface oxide film has been removed, to a prescribed temperature, and subsequently placing the substrate in a vacuum chamber and exposing the substrate to PH, an i-layer deposition stage of depositing the i-type amorphous silicon semiconductor layer () on the PH-exposed substrate, an n-layer deposition stage of depositing the n-type amorphous silicon semiconductor layer () on the i-type amorphous silicon semiconductor layer (), and an electrode formation stage of forming electrodes () on the surface of the n-type amorphous silicon semiconductor layer, and on the back surface of the substrate ().

Process for producing photovoltaic device

Provided is a photoelectric conversion device fabrication method that realizes both high productivity and high conversion efficiency by rapidly forming an n-layer having good coverage. The fabrication method for a photoelectric conversion device includes a step of forming a silicon photoelectric conversion layer on a substrate by a plasma CVD method. In the fabrication method for the photoelectric conversion device, the step of forming the photoelectric conversion layer includes a step of forming an i-layer formed of crystalline silicon and a step of forming, on the i-layer, an n-layer under a condition with a hydrogen dilution ratio of 0 to 10, inclusive.

Photoelectric conversion device fabrication method

A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate.

A method for making the characteristics of the distribution of film thickness uniform is provided, avoiding generation of phase differences among streams of high-frequency electric power by manipulating the electrical characteristics of cables through which the high-frequency electric power is transmitted. Coaxial cables (toandto) having a standard length and vacuum cables (toandto) are installed, then a film is formed on a substrate by actually supplying high-frequency electric power, and thereafter the condition of vapor deposition such as the thickness of the film is observed. Based on the observations, the full lengths of the coaxial cables which communicate with the feeding points and the electrodes which correspond with positions over the substrate which need to be adjusted are changed. The coaxial cables are installed again, and high-frequency electric power equivalent to that used in the previous operation is supplied to form a film. The distribution of the film formed on the substrate is made uniform by repeating the above operations.

Method for plasma-enhanced chemical vapor deposition and apparatus for plasma-enhanced chemical vapor deposition

In conventional optical isolators, an optical signal is dispersed by polarization or the characteristics are varied by heat generation in a garnet crystal. According to the invention, the crystal optical axis () of rutile crystal () is oriented so that the separation directions of the ordinary ray (O) and the extraordinary ray (E) are perpendicular to the plane including the optical axes of optical fibers (). Furthermore, the focusing central optical axis () of a focusing rod lens () is arranged parallel with optical axes of the optical fibers () and at a substantially equal distance from the four rays, i.e. the ordinary ray (O) and the extraordinary ray (E) propagating along the optical axis of the optical fiber () and the ordinary ray (O) and the extraordinary ray (E) propagating along the optical axis of the optical fiber (). An air gap () of about 200 [&#x3bc;m] is provided, as a heat insulating means, between the focusing rod lens () and a magnetized garnet crystal ().

In-line optical isolator

A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.

High-frequency power supply structure and plasma CVD device using the same

A plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. A first and a second power supply section are installed on both ends of the discharge electrode installed in a plasma chemical vapor deposition apparatus, and are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.

Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus

An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (), a ground electrode () is disposed, and a discharge electrode () is disposed opposite to the ground electrode (). A substrate () as a processing object is placed in close contact with the ground electrode (). A high-frequency voltage is applied to the discharge electrode () so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply () generates a first high-frequency voltage, and outputs the generated voltage on feeding points () disposed on a lateral portion of the discharge electrode (). An RF electric power supply () generates a second high-frequency voltage, and outputs the generated voltage on feeding points () disposed on another lateral portion of the discharge electrode (). Here, the second high-frequency voltage has the same frequency as that of the first high-frequency voltage and has a phase which varies with a low-frequency signal, which is modulated by a predetermined modulation signal.

High frequency plasma generator and high frequency plasma generating method

An optical fiber collimator array includes an optical fiber array block and a microlens array substrate. The optical fiber array block includes an angled surface and is configured to receive and retain a plurality of individual optical fibers, which carry optical signals. The microlens array substrate includes a plurality of microlenses integrated along a microlens surface and a sloped surface opposite the microlens surface. The microlens surface is coupled to the angled surface such that the optical signals from the individual optical fibers are each collimated by a different one of the integrated microlenses.

Fiber collimator array

The present invention provides a polarizer-attached optical fiber ferrule, a polarizer-attached optical fiber connector, and a polarized-attached optical fiber connector adapter for coupling a linear polarizer with one or more optical fibers without employing a lens. The polarizer-attached optical fiber connectoris equipped with an optical fiber, a ferrulefitted on the periphery of the optical fiberand equipped with a slitreaching the optical fiber, and a linear polarizerinserted into the slitso that it crosses the optical fiber

Polarizer-equipped optical fiber ferrule, connector and connector adaptor

An arrayed optical device includes a first optical fiber collimator array, a second optical fiber collimator array and an optical chip. The first optical fiber collimator array includes a first optical fiber array block and a first microlens array substrate. The second optical fiber collimator array includes a second optical fiber array block and a second microlens array substrate. The optical chip is coupled between the first microlens array substrate and the second microlens array substrate.

Arrayed optical device

A fiber-optic polarizer made by a process comprised of providing a substrate, coupling or embedding an optical single mode fiber to the substrate, making a narrow trench across the fiber at an angle, thereby bifurcating the fiber core into a first fiber core end and a second fiber core end, inserting and securing a thin polarizing material of a monolithic, non-laminated structure into the narrow trench, such that a light spot size emitted from a first fiber core is completely encompassed by the polarizing material, and the light spot size emerging from the polarizing material is substantially collected within the mode field diameter of a second fiber core. The narrow trench having a width of about 30-50 &mgr;m, and the polarizing material having a thickness of about 15-50 &mgr;m. The polarizing material having a monolithic composition. Moreover, the inventive polarizer has good reliability in terms of mechanical durability and weathering, since polarizer is fabricated on substrate in which optical path is entirely sealed. This is a process that eliminates the need to use specialized fibers or fibers that are specially treated such as those with thermally expanded cores (TEC). The process is also an alignment-free process that enables easier and faster mass-fabrication. This process produces multiple polarizers at a time.

Fiberoptic polarizer and method of making the same

A discharge plasma generating method includes (a) opposing a discharge electrode having a substantially plane discharge portion to a substrate to be processed in a vacuum reaction vessel such that the discharge electrode and the substrate are substantially parallel to each other, (b) evacuating the vacuum reaction vessel and supplying a process gas to a space between the discharge electrode and the substrate, and (c) applying HF power to the discharge electrode such that an envelope representing the spatial distribution of a HF voltage &phgr; on the discharge electrode in a split second changes in accordance with a function including time as a parameter, thereby generating a discharge plasma of the process gas between the discharge electrode and the substrate, with substantially no standing wave of the HF voltage &phgr; generated on the discharge electrode.

Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus

An alignment procedure aligns the components of an arrayed optical fiber collimator and reduces losses associated with the collimator. Initially, an optical fiber array block including a plurality of individual optical fibers is received and retained. Next, a microlens array substrate including a plurality of microlenses integrated along a microlens surface and a substrate surface opposite the microlens surface is received and retained. Then, at least a portion of a first light receiver that is positioned to receive a light beam from at least one of the integrated microlenses is received and retained. Next, at least one light beam is provided from the light source to at least one of the plurality of individual optical fibers. Then, the position of at least one of the microlens array substrate and the optical fiber array block is adjusted in relation to each other to maximize the optical power of the light beam received by the first light receiver.

System and method for fabricating arrayed optical fiber collimators

Growing community of inventors

Nagasaki, Japan

Yoshiaki Takeuchi