Samsung Electronics Co., Ltd.

International Business Machines Corporation

Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

National Institute for Materials Science

Ehime University

Kansai University

Yoshiaki Sonobe

Takeshi Kato

Syuta Honda

Shigeki Takahashi

Masatoshi Sonoda

Hiroyoshi Itoh

Toshiyuki Suzuki

Hiroshi Uchida

Yoichiro Tanaka

Kazuhiro Hono

Takashi Toyooka

Nobuyuki Kitazaki

Hiroaki Sukegawa

Seiji Mitani

Kazushi Tanimoto

Takao Matsui

Masayuki Kanamaru

Yoshinao Harada

Yoshihiro Okamoto

Makoto Imamura

Jun Liu

Katsuyoshi Kitagawa

Ken Machida

Yasuaki Nakamura

Yoshihiro Ikeda

Hwachol Lee

Kazuya Takeda

Koki Takanashi

Yoshiuki Tagashira

Hideto Yanagihara

Yoshinobu Nakatani

Teruo Ono

Hajime Tokumitsu

Eiji Kita

Keiichi Iwasaki

A magnetic memory device includes a first fixed layer maintaining a particular magnetization direction, a first non-magnetic layer, a free layer having perpendicular magnetic anisotropy and a variable magnetization direction, a second non-magnetic layer, and a second fixed layer maintaining a separate particular magnetization direction that is opposite to the particular magnetization direction of the first fixed layer. A resistance value of a first magnetic tunnel junction (MTJ) element including the first fixed layer, the first non-magnetic layer, and the free layer is different from that of a second MTJ element that includes the second fixed layer, the second non-magnetic layer, and the free layer, based on a first portion of the free layer in the first MTJ and a second portion of the free layer in the second MTJ being separated by a domain wall.

Magnetic memory device and magnetic memory apparatus with perpendicular magnetic anisotropy

Provided is a magnetic tunnel junction element and a magnetoresistive memory device. The magnetic tunnel junction element includes a fixed layer maintaining a magnetization direction, an insulating layer, a free layer having a variable magnetization direction, and an antiferromagnetic oxide layer. The fixed layer, the free layer, and the antiferromagnetic oxide layer may be sequentially stacked. The free layer and the antiferromagnetic oxide layer may be in direct contact with each other.

Magnetic tunnel junction element and magnetoresistive memory device

A magnetic memory device includes a spin orbit torque (SOT) generator configured to generate a SOT, and a vertical magnetic recording layer connected to a main surface of the SOT generator at one end thereof, and is configured to record information using a SOT generated by the SOT generator and a current flowing in the vertical magnetic recording layer in combination. The magnetic memory device includes an insulating layer on one end of the vertical magnetic recording layer in an extension direction of the vertical magnetic recording layer, and a fixed layer on the insulating layer in the extension direction of the vertical magnetic recording layer.

Magnetic memory device and magnetic memory apparatus

A magnetic memory device is provided. The magnetic memory device includes a spin orbit torque (SOT) source configured to generate SOT, and a magnetic fine wire of which one end contacts a main surface of the SOT source. A direction of SOT generated by the SOT source is perpendicular to a direction in which the magnetic fine wire extends, and a magnetic domain in the magnetic fine wire is parallel to the direction in which the magnetic fine wire extends.

A magnetic memory device includes a first magnetic memory device, a second magnetic memory device, a pulse power supplying current pulses to the first and second magnetic memory devices; and a switch configured to selectively connect the pulse power to one of the first and second magnetic memory devices. A resistance value of an MTJ device composed of the first fixed layer, the first non-magnetic layer, and the free layer is different from a resistance value of a MTJ device composed of the second fixed layer, the second non-magnetic layer, and the free layer.

Magnetic memory device and operation method thereof

A magnetic memory device includes a magnetic body having magnetic anisotropy and an insulator including a ferromagnetic element. The magnetic body is structurally connected to both ends of the ferromagnetic insulator, and the magnetic body and the ferromagnetic insulator form a ring shape. An easy axis of the magnetic body is directed in a direction parallel to an opening surface of the ring shape in a whole of the magnetic body.

Magnetic memory device

A magnetic memory device includes a first magnetic structure having a magnetic anisotropy, a read electrode that is on an end of the first magnetic structure and configured to sense a first magnetic moment of the first magnetic structure and to convert the first magnetic moment to an electric signal, a second magnetic structure spaced apart from the first magnetic structure, the second magnetic structure having a magnetic anisotropy, and a write electrode that is on an end of the second magnetic structure and configured to change a second magnetic moment of the second magnetic structure, based on the electric signal. The magnetic memory device executes operations of writing, moving, and reading data on almost the entire region of the magnetic structure in a more efficient manner, compared with the conventional magnetic memory device.

Magnetic memory devices including magnetic structure with magnetic domains

A race track magnetic memory device includes a magnetic fine wire having a plurality of magnetic domains, a magnetic tunnel junction element comprising a pinned layer and an insulating layer, and a spin-orbit torque (SOT) generator. An easy axis of the magnetic fine wire is substantially perpendicular to a contact surface of the magnetic fine wire and the SOT generator. The magnetic tunnel junction element and the SOT generator are disposed on a magnetic domain write region of the magnetic fine wire. Data is written by generating spin-transfer torque at magnetization of the magnetic domain write region by flowing a first current in the magnetic tunnel junction element and by generating spin-orbit torque at the magnetization of the magnetic domain write region by flowing a second current in the SOT generator.

Race track magnetic memory device and writing method thereof

A magnetic tunnel junction (MTJ) element includes a free layer, a pinned layer on the free layer, and a dielectric layer extending between the free layer and the pinned layer. A spin orbit torque (SOT) generator is provided, which contacts at least a portion of the free layer. A plane extending between the SOT generator and the free layer intersects a plane extending between the free layer and the dielectric layer. The SOT generator is configured to modulate current that passes between the free layer, the dielectric layer, and the pinned layer. This SOT generator can include a pair of electrodes that are spaced apart from each other in a direction orthogonal to a stacking direction of the free layer, the dielectric layer and the pinned layer. This SOT generator may include a metal selected from a group consisting of Pt, W, and Ta, or may include a topological insulator.

Magnetic tunnel junction elements and magnetic resistance memory devices including the same

Disclosed is a magnetic tunnel junction device whose fixed layer has a simplified structure and in which the number of stacked layers is reduced. The magnetic tunnel junction device comprises a free layer whose magnetization direction is variable, a fixed layer whose magnetization direction is fixed and that is formed as a single layer, and a dielectric layer stacked between the free layer and the fixed layer. One or more of the free layer and the fixed layer are an L1type magnetic alloy layer, and the dielectric layer has a (111) texture.

Magnetic tunnel junction device and magnetic resistance memory device

Provided are a magnetic tunnel junction device and a magnetic resistance memory device which are capable of both reducing a write current and increasing a write speed. The magnetic tunnel junction device includes a free layer having a first magnetization direction that is changeable, a pinned layer that is configured to maintain a second magnetization direction in a predetermined direction, and an insulating layer between the free layer and the pinned layer. The free layer includes a first free layer having perpendicular magnetic anisotropy and high polarizability, and a second free layer that is antiferromagnetic-coupled to the first free layer.

A magnetoresistive memory device includes a memory cell including a magnetic tunnel junction element, a detector to detect a current value writable in units of the memory cell, a current value storage area, and a current controller. The current value storage area stores at least one of a maximum value and a minimum value of the writable current value detected by the detector. The current controller performs at least one control operation of an operation of controlling a write current value of the memory cell based on the maximum value and an operation of controlling a read current value of the memory cell based on the minimum value.

Apparatus including magnetoresistive memory device

Magnetic tunnel junction devices are provided. A magnetic tunnel junction device includes a pinned layer. The magnetic tunnel junction device includes a free layer on the pinned layer. The free layer includes a first layer, a second layer that is on the first layer, and a third layer that is between the first layer and the second layer. A Curie temperature of the third layer is lower than a Curie temperature of the first layer and lower than a Curie temperature of the second layer. Moreover, the magnetic tunnel junction device includes an insulating layer that is between the pinned layer and the free layer. Related magnetoresistive memory devices are also provided.

Magnetic tunnel junction devices and magnetoresistive memory devices

Magnetoresistive memory device

Embodiments of the inventive concepts provide a flat perpendicular magnetic layer having a low saturation magnetization and a perpendicular magnetization-type tunnel magnetoresistive element using the same. The perpendicular magnetic layer is a nitrogen-poor (MnGa)Nlayer (0&#x3c;x&#x2264;0.5 and 0&#x3c;y&#x3c;0.1) formed by providing nitrogen (N) into a MnGa alloy while adjusting a nitrogen amount. The perpendicular magnetic layer can be formed flat.

Growing community of inventors

Yokohama, Japan

Yoshiaki Sonobe