Kabushiki Kaisha Toshiba

Komatsu Corporation

Hitachi-high-technologies Corporation

Tdk Corporation

Thk Co., Ltd.

Hitachi High-tech Corporation

Kabuhsiki Kaisha Toshiba

Thk Gmbh

Yoshiaki Saito

Hideyuki Sugiyama

Tomoaki Inokuchi

Tatsuya Kishi

Mizue Ishikawa

Minoru Amano

Shigeki Takahashi

Koichiro Inomata

Hiroaki Yoda

Takao Marukame

Kentaro Nakajima

Masayuki Sagoi

Tomomasa Ueda

Tetsufumi Tanamoto

Katsuya Nishiyama

Yoshihisa Iwata

Yoshiaki Asao

Toshihide Orihashi

Shiho Okuno

Masaharu Nishimatsu

Kazuhiro Nakamura

Yuichi Kubota

Soichi Oikawa

Yushi Kato

Toshiaki Ide

Naoto Suzuki

Yuichi Ohsawa

Atsuhiro Kinoshita

Keiichiro Yusu

Minoru Wada

Yoichi Aruga

Yoshinori Takahashi

Susumu Hashimoto

Tadashi Kai

Masahiko Nakayama

Naoharu Shimomura

Keiko Abe

Akira Takashima

Hidekazu Michioka

Satoshi Matsumoto

Sumio Ikegawa

Masaaki Imaizumi

Akihiro Yasui

Hitoshi Tokieda

Masamichi Suzuki

Daisuke Yatsushiro

Masatsugu Numazaki

Hitoshi Iwasaki

Shinichi Nakamura

Shinobu Fujita

Naoharu Sugiyama

Kosuke Tatsumura

Keiji Hosotani

Junichi Akiyama

Katsutaro Ichihara

Kazutaka Ikegami

Hiroyuki Arioka

Hisanori Aikawa

Masato Oda

Katsuya Iida

Reiko Kondoh

Masakatsu Tsuchiaki

Satoshi Fujita

Yoshimitsu Takagi

Tadashi Hirokawa

Toru Shimozawa

Shigeru Shimada

Takuya Yamaguchi

Hideo Ogiwara

Hitoshi Ohtake

Mamoru Tochizawa

Yasuo Kaneko

Takahide Takiguchi

Masahiro Kumagai

Roger Highmore

Yasuaki Takebe

Reinhard G Welle

Midori Watanabe

Toshihiko Ohto

Koji Takahashi

Isamu Satoh

Satoshi Kohsuge

Kyouhei Sawada

Jun Kawayanagi

Kentarou Itou

Kiyoteru Noguchi

The automatic analyzer includes a light sourceto perform measurement, a spectrophotometer, a reagent diskto store a reagent bottlein which the reagent is stored, a carriage device to carry the reagent bottleto the reagent disk, a reagent preparation unit to perform preparatory operations required before the regent bottleis used, and a control unitto schedule the preparatory operations by the reagent preparation unit and the carriage operation by the carriage device such that the reagent bottleis carried to the reagent diskimmediately after an operation accompanied with analysis by the light sourceand the spectrophotometeris suspended or ends.

Automatic analyzer

When the type is to be changed from serum (preceding sample) to urine (current sample), 'serum' is set to a preceding type and 'urine' is set to a measurement type at number 1 in a condition number. At condition number 1, the wash type is pattern 1, with washing performed once with detergent 1. Where the preceding sample is serum and the current sample is CSF, the condition number is 2 and the wash type is pattern 2, with washing performed twice using detergent 1 and once with detergent 2. Where the preceding sample is urine and the current sample is CSF, the condition number is 3 and the wash type is pattern 3, with washing performed once with detergent 1, once with detergent 2, and once with water. In the case of pattern 4, washing is performed three times with detergent 1.

Automatic analyzer and method for washing sample-pipetting probe

An automatic analyzer is capable of ensuring sufficient nozzle cleaning and suppressing of deterioration in the accuracy of analysis. When it is judged that there remains no analysis item of the sample, a judgment is made on whether the sample dispensation quantity of the n-th sample dispensation is less than a dispensation quantity threshold value or not, and if less, a cleaning pattern is selected by making a judgment on whether or not all the sample dispensation quantities of the first through (n&#x2212;1)-th sample dispensations are less than the dispensation quantity threshold value. If the sample dispensation quantity of the n-th sample dispensation is the dispensation quantity threshold value or more, another cleaning pattern selected by making the judgment on whether or not all the sample dispensation quantities of the first through (n&#x2212;1)-th sample dispensations are less than the dispensation quantity threshold value.

A magnetic memory includes: first to third terminals; a conductive layer including first to fifth regions, the first region being electrically connected to the first terminal, the fifth region being electrically connected to the second terminal, and the third region being electrically connected to the third terminal; a first magnetoresistive element including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, and a first nonmagnetic layer disposed between the first and the second magnetic layer; a second magnetoresistive element including a third magnetic layer, a fourth magnetic layer disposed between the fourth region and the third magnetic layer, and a second nonmagnetic layer disposed between the third and the fourth magnetic layer; and a circuit flowing a write current between the first and the second terminal and between the second and the third terminal in a write operation.

Magnetic memory

A magnetic memory according to an embodiment includes: first to third terminals; a nonmagnetic conductive layer including first to third regions, the second region being disposed between the first and third regions, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; and a magnetoresistive element disposed to correspond to the second region, including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the second region, and a nonmagnetic layer disposed between the first and second magnetic layers, the conductive layer including at least one of an alloy including Ir and Ta, an alloy including Ir and V, an alloy including Au and V, an alloy including Au and Nb, or an alloy including Pt and V, each of the alloys having an fcc structure.

According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes first and second portions, and a third portion between the first and second portions. The conductive layer includes a first metal and boron. The first magnetic layer is separated from the third portion in a first direction crossing a second direction. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The controller supplies a current to the conductive layer. The first metal includes at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

Magnetic memory device

According to one embodiment, a magnetic memory device includes a conductive layer, first and second magnetic layers, a first nonmagnetic layer and a controller. The conductive layer includes first and second portions, and a third portion positioned between the first and second portions. The conductive layer includes a first metal. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The second magnetic layer has first and second lattice lengths. The first lattice length is longer than the second lattice length. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.

According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion between the first and second portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The third portion includes a first region and a second region. The second region is provided between the first region and the second magnetic layer. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.

A magnetic memory according to an embodiment includes: a magnetoresistive device including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer between the first magnetic layer and the second magnetic layer; a first wiring electrically connected to the first magnetic layer; a second wiring that is electrically connected to the second magnetic layer and contains an antiferromagnetic material; a third wiring crossing the second wiring; an insulating layer between the second wiring and the third wiring; a first write circuit for applying a voltage between the second wiring and the third wiring; and a read circuit electrically connected to the first wiring and the second wiring.

Magnetic memory including a magnetoresistive device that includes a first magnetic layer having a fixed magnetization and a second magnetic layer having a changeable magnetization

A magnetic memory of an embodiment includes: first through third terminals; a conductive layer including first through third portions, the first portion being located between the second and third portions, the second and third portions being electrically connected to the first and second terminals respectively; and a magnetoresistive element including: a first magnetic layer electrically connected to the third terminal; a second magnetic layer disposed between the first magnetic layer and the first portion; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer; and a second nonmagnetic layer disposed between the second magnetic layer and the third magnetic layer, a sign of a spin Hall angle of the second nonmagnetic layer being different from a sign of a spin Hall angle of the conductive layer.

In determining whether a rack inputted to the automatic analyzer by the user is to be transferred to an analysis section or not, samples existing in a route from a buffer to a sample dispensing position in the analysis section are identified, and the number of items in which suction by a nozzle has not been completed in analysis items requested for the samples is managed. When the number of items is reduced to be smaller than a given number, the conveyance of a next rack from the buffer to the analysis section is controlled, thereby limiting the number of analysis items requested for samples in a waiting state for analysis in the analysis section constantly to be smaller than a fixed number. As a result, a period of time until a measurement result of emergency samples is outputted can be reduced even when emergency samples are newly inputted.

After an analysis start instruction is input in a state where a sample is not dispensed to all of reaction containersmounted on a reaction disc, before completing an analysis preparation washing process for washing the reaction containerto be used in analyzing the sample to be first analyzed, a soaking and washing process for performing soaking and washing during a predetermined period of time is controlled to be started by dispensing a soaking and washing detergent to another reaction containerdifferent from the reaction container. In this manner, the soaking and washing can be efficiently performed on the reaction container without hindering an analysis process.

Automatic analysis device

When the type is to be changed from serum (preceding sample) to urine (current sample), 'serum' is set to a preceding type and 'urine' is set to a measurement type at numberin a condition number. At condition number, the wash type is pattern, with washing performed once with detergent. Where the preceding sample is serum and the current sample is CSF, the condition number isand the wash type is pattern, with washing performed twice using detergentand once with detergent. Where the preceding sample is urine and the current sample is CSF, the condition number isand the wash type is pattern, with washing performed once with detergent, once with detergent, and once with water. In the case of pattern, washing is performed three times with detergent

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Kawasaki, Japan

Yoshiaki Saito