Rohm Co., Ltd.

Ulvac, Inc.

Pioneer Corporation

Mitsui Chemicals, Inc.

Yoshiaki Oku

Norikazu Nishiyama

Korekazu Ueyama

Nobutoshi Fujii

Noriyuki Shimoji

Kazuo Kohmura

Suguru Okuyama

Hiroyuki Yano

Shunsuke Akasaka

Masaya Nogi

Shinsuke Ifuku

Kentaro Abe

Shunsuke Tanaka

Disclosed is a production system for methane, including a reaction vessel having a solid electrolyte membrane and an electrode group including at least a pair of electrodes arranged on the solid electrolyte membrane, in which one of the electrodes functions as a cathode side electrode, and the other electrode functions as an anode side electrode, and the one electrode that functions as the cathode side electrode includes a hydrogenation catalyst.

Production system and production method for methane

A highly transparent fiber composite material is provided that can be manufactured through a simplified process using reduced amounts of raw materials and that has high flexibility and low thermal expansivity and retains good functionality of the fiber material. The fiber composite material includes: a fiber assembly having an average fiber diameter of 4 to 200 nm and a 50 &#x3bc;m-thick visible light transmittance of 3% or more; and a coating layer that coats and smoothes the surface of the fiber assembly, wherein the fiber composite material has a 50 &#x3bc;m-thick visible light transmittance of 60% or more. With this fiber assembly, the scattering of light caused by the irregularities on the surface can be suppressed by coating the surface with the coating layer to smooth the surface, whereby a highly transparent fiber composite material can be obtained.

Fiber composite material and method for manufacturing the same

A semiconductor device having a wiring structure that is enhanced in adhesion between a dielectric thin film and a conductive layer and has high reliability is provided. A method of the invention includes: a step of supplying reactive plasma on a surface of a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si&#x2014;O bond, to perform a pretreatment; a step of forming a conductive film on the surface of the pretreated dielectric thin film by a sputtering method; and before the pretreatment step, bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the surface of the dielectric thin film.

Manufacturing method of semiconductor device and semiconductor device produced therewith

A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided. A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si&#x2014;O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film.

A hybrid organic light-emitting transistor device and a manufacturing method thereof are provided. The hybrid organic light-emitting transistor device includes at least one organic light-emitting diode device and at least one organic thin-film transistor device placed on the same substrate. The organic light-emitting diode device has a first organic layer placed between an anode and a cathode, and the organic thin-film transistor device has a second organic layer placed on a source electrode and a drain electrode. The first organic layer and the second organic layer are spatially isolated from each other, and an organic material forming the second organic layer is identical to an organic material forming the first organic layer. The hybrid organic light-emitting transistor with a reduced pixel size and an improved aperture ratio can be easily obtained.

Hybrid organic light-emitting transistor device and manufacturing method thereof

An organic thin film transistor including: a substrate; a gate electrode placed on the substrate; a gate insulating film placed on the gate electrode; a source electrode and a drain electrode which are placed on the gate insulating film; an organic semiconductor layer placed on the gate insulating film between the source electrode and the drain electrode; a hole transport layer placed on the organic semiconductor layer; an electron transport layer placed on the hole transport layer; and a conductor layer placed on the electron transport layer; the organic thin film transistor which characteristics are stable by being protected from oxygen or moisture and being protected electromagnetically and which is suitable for integration.

Electromagnetically protected organic thin film transistor

It is an object to provide an insulating film having a very low dielectric constant and a great mechanical strength. Moreover, it is another object to provide a semiconductor device capable of reducing both a capacity between wiring layers and a capacity between wirings also in microfabrication and an increase in integration in the semiconductor device. In order to attain the objects, there is provided an inorganic insulating film comprising a porous structure having a skeletal structure in which a vacancy is arranged periodically and a large number of small holes are included.

Semiconductor device comprising an inorganic insulating film and method of manufacturing the same

The invention is characterized by attaining a lower dielectric constant and including an inorganic dielectric film which is formed on the surface of a substrate and has a cyclic porous structure having a pore ratio of 50% or higher.

Semiconductor device, and method for manufacturing the same

There is included an inorganic insulating film having a porous structure including a cylindrical vacancy oriented in parallel with the surface of a substrate subjected to a hydrophilic treatment or a hydrophobic treatment.

Semiconductor device and method of manufacturing the same

The invention aims at providing a dielectric film having a low dielectric constant and enhanced mechanical strength. A surfactant and an silica derivative are dissolved into a solvent at a desired mole ratio. The precursor solution is applied over the substrate, and the substrate is exposed to a silica derivative atmosphere before being sintered, thereby supplying a silica derivative. Thus, contraction of the film stemming from hydrolysis is inhibited, and a sturdy mesoporous silica thin film which takes the self-assembly of the surfactant as a mold is obtained while cavities are maintained intact without being fractured. Thus, there is formed an inorganic dielectric film which is formed on the surface of the substrate and has a cyclic porous structure including layered or columnar pores oriented so as to become parallel with the surface of the substrate.

Production method for semiconductor device

It is an object to provide, with a high productivity, a dielectric thin film having a high degree of pore and a very great mechanical strength, and there are included a surfactant film forming step of forming a film including a surfactant on a surface of a substrate on which a thin film is to be formed, a vapor deposition step of causing the substrate to come in contact with a gas phase containing a silica derivative to form a thin film including the silica derivative, and a step of calcining the substrate having the thin film formed thereon and decomposing and removing the surfactant, the thin film being thus formed.

Method for forming thin film

Semiconductor device and production method therefor

In an FET having an MFMIS structure in which a floating gate, a ferroelectric layer and a control gate are sequentially provided through a gate insulating film on the surface of a source&mdash;drain region formed on the surface of a semiconductor substrate, the ferroelectric layer is constituted by an inorganic film having a vacancy rate of 50% or more.

Growing community of inventors

Kyoto, Japan

Yoshiaki Oku