Sony Semiconductor Solutions Corporation

Sony Corporation

Murata Manufacturing Co., Ltd.

Yoshiaki Obana

Nobuyuki Matsuzawa

Ichiro Takemura

Yuta Hasegawa

Hideaki Mogi

Norikazu Nakayama

Osamu Enoki

Yuki Negishi

Tetsuji Yamaguchi

Hiroyuki Akashi

Iwao Yagi

Kenichi Ogawa

Masami Shimokawa

Hideki Ono

Yosuke Saito

Atsushi Kajita

Tomoyuki Higo

Tomitaro Hara

Yukako Teshima

Yu Kato

Hisashi Tsujimoto

Takashi Tokunaga

Yosuke Hosoya

Michinori Shiomi

Daisuke Hobara

Kumiko Takagi

Syuuiti Takizawa

Takeru Bessho

Yosuke Konishi

Toshikazu Nakamura

Toshikazu Nakaura

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Photoelectric conversion element and solid-state imaging device

There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.

Photoelectric conversion film, photoelectric conversion element and electronic device

A photoelectric conversion element according to the disclosure includes: a first electrode and a second electrode that are disposed to face each other; and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and contains at least one kind of polycyclic aromatic compound represented by any one of the following general formula (1), the following general formula (2), and the following general formula (3): 

A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.

Solid-state imaging device to improve photoelectric efficiency

A photoelectric conversion element according to an embodiment of the disclosure includes a first electrode and a second electrode that are disposed to face each other and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and contains at least a subphthalocyanine or a subphthalocyanine derivative, and a carrier dopant, in which the carrier dopant has a concentration of less than 1% by volume ratio to the subphthalocyanine or the subphthalocyanine derivative.

Photoelectric conversion element, imaging device, and electronic apparatus to improve photoresponse while maintaining superior wavelenght selectivity of a subphthalocyanine and a subphthalocyanine derivative

A photoelectric conversion element according to one embodiment of the disclosure includes: a first electrode and a second electrode that are oppositely disposed; and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes a high-molecular semiconductor material and a low-molecular material. The high-molecular semiconductor material has an absorption coefficient in a visible light region of 50000 cmor less. The low-molecular material includes an absorption peak in a wavelength range corresponding to one color in the visible light region.

Photoelectric conversion element, imaging device, and electronic apparatus

Photoelectric conversion element, imaging device, and electronic apparatus comprising a photoelectric conversion layer having at least a subphthalocyanine or a subphthalocyanine derivative and a carrier dopant

A photoelectric conversion device of an embodiment of the technology includes: a first electrode and a second electrode facing each other; a photoelectric conversion layer provided between the first electrode and the second electrode; and a buffer layer provided between the first electrode and the photoelectric conversion layer, and having an interface, to which an organic molecule or a halogen element is coordinated, with the photoelectric conversion layer.

Photoelectric conversion device and imaging device

There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula (1) and a subphthalocyanine derivative represented by the following General formula (2). 

A photoelectric conversion element according to an embodiment of the present disclosure includes a first electrode and a second electrode opposed to each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material and a second semiconductor material that have mutually different mother skeletons, in which the first organic semiconductor material is fullerene or a fullerene derivative, and the second organic semiconductor material has a deeper HOMO level than the first organic semiconductor material.

Photoelectric conversion element and solid-state imaging apparatus

Growing community of inventors

Kanagawa, Japan

Yoshiaki Obana