Advanced Lcd Technologies Development Center Co., Ltd.

Toshiba Matsushita Display Technology Co., Ltd.

Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center

Toshiba Mobile Display Co., Ltd.

Yoshiaki Nakazaki

Genshiro Kawachi

Masakiyo Matsumura

Terunori Warabisako

Tomoya Kato

Hiroyuki Kimura

Masahiro Tada

Hajime Watakabe

Arichika Ishida

Masato Hiramatsu

Akihiko Saitoh

Fumiki Nakano

Takahiko Endo

Masaki Kado

Shinzo Tsuboi

Toshiya Kiyota

Mikio Murata

Shinichi Hirota

A structure of a plurality of thin film transistors wherein a peripheral circuit on a glass substrate of a liquid crystal display panel; and each of polycrystalline silicon thin filmof the thin film transistor is formed on the glass substrate; and each of gate electrodeis formed on a gate insulation layer, and each of the gate electrodeis overhead corresponding to the polycrystalline silicon thin filmfor a channel; wherein the gate electrodeis comprised a pair of projection partA and a gate-channelB; and wherein the pair of projection partA is formed the both sides of the gate-channelB in which the side is for along the channel-direction, and wherein the pair of projection partA is enlarged for across the channel-direction.

Structure of thin film transistors and liquid crystal display device having the same

In order to prevent a gradation shift due to variations in the thickness of a film used to form an auxiliary capacitor, a detection capacitor having a layer structure similar to that of the auxiliary capacitor placed for each pixel is provided on an array substrate. Furthermore, the capacitor value of the detection capacitor as a representative of the plurality of auxiliary capacitors is detected, and the potential amplitude &#x394;Vcs of a power supply line connected to the auxiliary capacitor is adjusted based on this detected value.

Liquid crystal display device

The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.

Thin-film transistor, method for manufacturing thin-film transistor, and display using thin-film transistors

An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and disposed on an insulating substrate is irradiated with laser light having an inverse-peak-patterned light intensity distribution to grow crystals unidirectionally in a lateral direction. Thus, band-like crystal grains having a dimension in a crystal growth direction, which is longer than a width, are arranged adjacent to each other in a width direction to form a crystal grain array. A source region and a drain region of a TFT are formed so that a current flows in the crystal growth direction in an area including a plurality of crystal grains of this crystal grain array.

Thin film transistor, semiconductor device, display, crystallization method, and method of manufacturing thin film transistor

There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.

Thin-film transistor formed on insulating substrate

There is provided an input-output (I/O) protective circuit having more stable I/O protective function for use in the liquid crystal display device. An IO protective circuit includes: a resistanceprovided between an I/O terminal padand an I/O primary stage thin film transistor, a wiring connecting the I/O terminal padwith the resistance, and two I/O protective thin film transistorsconnected in series between a ground terminaland a power source terminal. The above wiring is connected with each joint portion of the two I/O protective thin film transistorsand, each of the two I/O protective thin film transistorshas p-type substrate potential fixing terminalsand n-type substrate potential fixing terminals, which are connected with each of the channel layers of the I/O protective thin film transistors, and p-type substrate potential fixing terminalsand n-type substrate potential fixing terminalsare connected with the ground terminals

Protection circuit for input and output of liquid crystal display

Growing community of inventors

Saitama, Japan

Yoshiaki Nakazaki