Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Yoshiaki Nakao

Shunichi Iwanari

Yasuo Murakuki

Kazuyuki Kouno

Yasushi Gohou

Masanori Matsuura

A semiconductor memory device includes a first select line and a second select line. A first memory element among a plurality of memory elements has a first top electrode and a first bottom electrode. The first top electrode is connected to the first select line and the first bottom electrode is connected to the second select line. A second memory element among the plurality of memory elements, which is disposed adjacent to the first memory element, has a second top electrode and a second bottom electrode. The second top electrode is connected to the first select line, and the second bottom electrode is connected to the first select line without passing a resistive element of a memory element other than the second memory element.

Semiconductor memory device

The demand for reducing the size and increasing the degree of integration of semiconductor memory devices has increased. In a semiconductor memory device, a smoothing capacitor which has to be provided therein for stabilizing a power supply voltage etc. is formed in an underlying layer of memory cells A and B to overlap the two memory cells A and B which are adjacent each other. Thus, an area occupied by the smoothing capacitor having a large capacity can be reduced to increase the degree of integration, and the smoothing capacitor having a large capacity can be provided in the semiconductor memory device.

A semiconductor memory device includes a plurality of memory cell arrays each including a plurality of memory cells arranged in a matrix pattern, and a plurality of cell plate lines each being shared by the memory cell arrays, each of the cell plate lines corresponding to each of rows of the memory cells and each of the cell plate lines being connected to the memory cells of a corresponding one of the rows. Each of the memory cell arrays includes a plurality of word lines each of which corresponds to each of the rows of the memory cells in the memory cell array. The number of the memory cells connected to each of the cell plate lines is larger than the number of the memory cells connected to one of the word lines corresponding to the each of the cell plate lines.

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Osaka, Japan

Yoshiaki Nakao