Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Yoshiaki Masuda

Kazufumi Watanabe

Tomoyuki Hirano

Hideshi Abe

Yuki Miyanami

Yoshiki Ebiko

Tomoharu Ogita

Masanari Yamaguchi

Shinji Miyazawa

Minoru Ishida

Keishi Inoue

Kyohei Mizuta

Harumi Tanaka

Hirohisa Uchida

Masahiro Tada

Naoyuki Sato

Chihiro Arai

Takeshi Matsunuma

Tomohiko Asatsuma

Norihiro Kubo

Atsuhiro Ando

Tokihisa Kaneguchi

Sotetsu Saito

Akira Shinozaki

Keita Hondo

Provided is a solid-state imaging device capable of improving sensitivity of near-infrared wavelengths and suppressing color mixing without being restricted by a wiring layout. A solid-state imaging device includes: a substrate on which a plurality of photoelectric conversion units are formed corresponding to different light wavelengths; a wiring layer including a transistor on a surface opposite to a surface on a light incident side of the substrate and on a photoelectric conversion unit side to execute signal processing on a charge output from the photoelectric conversion unit and a wiring on a side opposite to the photoelectric conversion unit side of the transistor to transfer an electrical signal obtained by the transistor; and a reflection design film on a transistor side from at least a junction between the substrate and the wiring layer, which has higher reflectivity than the wiring layer and reflects a vertical component of incident light.

Solid-state imaging device and electronic device

The present disclosure relates to an image pickup device and an electronic apparatus that enable further downsizing of device size. The device includes: a first structural body and a second structural body that are layered, the first structural body including a pixel array unit, the second structural body including an input/output circuit unit, and a signal processing circuit; a first through-via, a signal output external terminal, a second through-via, and a signal input external terminal that are arranged below the pixel array, the first through-via penetrating through a semiconductor substrate constituting a part of the second structural body, the second through-via penetrating through the semiconductor substrate; a substrate connected to the signal output external terminal and the signal input external terminal; and a circuit board connected to a first surface of the substrate. The present disclosure can be applied to, for example, the image pickup device, and the like.

Image pickup device and electronic apparatus

There is provided an imaging device capable of further improving image quality of a subject, particularly a lesion portion such as cancer. There is provided an imaging device including: a first substrate including a first pixel array unit in which a plurality of pixels having at least a first photoelectric conversion unit is arranged in a two-dimensional manner, a first wiring layer, and a first support layer stacked in this order; and a second substrate including a second pixel array unit in which a plurality of pixels having at least a second photoelectric conversion unit is arranged in a two-dimensional manner, a second wiring layer, and a second support layer stacked in this order, in which the first support layer and the second support layer are bonded to each other to form a stacked structure, and at least one of the support layers includes an antireflection layer.

Imaging device and electronic device

The present disclosure relates to reducing the size of a solid-state imaging apparatus. The solid-state imaging apparatus is configured by laminating a first structure body, comprising a pixel array unit in which pixels for performing photoelectric conversion are two-dimensionally aligned, and a second structure body, comprising an output circuit unit for outputting a pixel signal. The output circuit unit, including a through via which penetrates a semiconductor substrate constituting a part of the second structure body, and a signal output external terminal connected to the outside of the apparatus are arranged under the first structure body, the output circuit unit is connected to the signal output external terminal via the through via, and the outermost surface of the apparatus is a resin layer formed on an upper layer of an on-chip lens of the pixel array unit.

Solid-state imaging apparatus having output circuit unit for outputting a pixel signal

The present disclosure relates to a semiconductor device, a solid-state image pickup element, an image pickup device, and an electronic apparatus that are enabled to reduce restrictions on materials and restrictions on device configuration. A CSP imager and a mounting substrate are connected together with a connection portion other than a solder ball. With such a configuration, restrictions on materials and restrictions on device configuration are reduced, which has conventionally occurred because it is limited to a configuration in which solder balls are used for connection. The present disclosure can be applied to image pickup devices.

Semiconductor device, solid-state image pickup element, image pickup device, and electronic apparatus

An imaging device including: a photoelectric converter; a protection member provided on a light incidence side of the photoelectric converter; a substrate opposed to the protection member with the photoelectric converter interposed therebetween and having a first surface on the photoelectric converter side and a second surface opposed to the first surface; a rewiring layer provided in a selective region of the second surface of the substrate; and a protective resin layer provided on the second surface of the substrate, the second surface of the substrate having an external terminal coupling region exposed from the protective resin layer, and a stress relaxation region exposed from the protective resin layer and disposed at a position different from the external terminal coupling region.

Imaging device with protective resin layer and stress relaxation region

The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Solid-state imaging device with uneven structures and method for manufacturing the same, and electronic apparatus

A solid-state imaging device, for reduction of reflection of incident light at a sidewall surface of a light blocking layer of each phase difference detection pixel, includes: a normal pixel for generating a pixel signal; and a phase difference detection pixel for generating a phase difference signal for image plane phase difference AF. In this solid-state imaging device, the normal pixel and the phase difference detection pixel each include a photoelectric conversion layer and a lens for gathering incident light onto the photoelectric conversion layer, the phase difference detection pixel includes a light blocking layer having an apertural portion with an aperture deviating from the optical axis of the lens, and an antireflection portion that prevents reflection of the incident light gathered by the lens unit is formed on the light blocking layer. The present disclosure can be applied to back-illuminated CISs.

Solid-state imaging device with phase difference detection pixel and electronic apparatus

The present disclosure relates to a chip size package that enables realization of a compact chip size package in which a solid-state imaging element and a light emitting element are integrated, a method of manufacturing the same, an electronic device, and an endoscope. The chip size package which is an aspect of the present disclosure is provided with a solid-state imaging element which generates a pixel signal according to incident light and a light emitting element which outputs irradiation light according to voltage applied in which the solid-state imaging element and the light emitting element are integrated. The present disclosure is applicable to, for example, a compact electronic device, a medical endoscope, and the like.

Chip size package, method of manufacturing the same, electronic device, and endoscope

Growing community of inventors

Kumamoto, Japan

Yoshiaki Masuda