Renesas Technology Corp.

Hitachi Plant Engineering Construction Co., Ltd.

Renesas Electronics Corporation

Yoshiaki Kobayashi

Shigeru Kobayashi

Koji Kato

Kenji Tokunaga

Teruo Minami

A sealed type container accommodating a semiconductor substrate is positioned to a load port of a semiconductor manufacturing apparatus. The semiconductor substrate is taken out of the container. An ionizer is used for static-charge-eliminating the semiconductor substrates before and after process treatment in a transport area between the load port and a treatment section. The static-charge-eliminated semiconductor substrate is accommodated in the container positioned to the load port. Thus, it is possible to decrease foreign materials adhering to the semiconductor substrate and errors in handling the semiconductor substrate.

Method of manufacturing a semiconductor integrated circuit device including elimination of static charge of a treated wafer

A sealed type container accommodating a semiconductor substrate is positioned to a load port of a semiconductor manufacturing apparatus. The semiconductor substrate is taken out of the container. An ionizer is used for static-eliminating the semiconductor substrates before and after process treatment in a transport area between the load port and a treatment section. The static-eliminated semiconductor substrate is accommodated in the container positioned to the load port. Thus, it is possible to decrease foreign materials adhering to the semiconductor substrate and errors in handling the semiconductor substrate.

Method of manufacturing a semiconductor integrated circuit device with elimination of static charge

When a conventional semiconductor container opening/closing apparatus opens a lid of a semiconductor container, foreign particles enter into the container from outside through a gap between the container and a wall surface of the container opening/closing apparatus and adhere to a wafer in the container. An apparatus is provided to reduce the number of foreign particles adhering to the wafer by preventing foreign particles from entering into the container at the time of opening the container by the opening/closing apparatus. To achieve this, a velocity-differential pressure ratio obtained by dividing the maximum velocity at the time of opening the lid of the container in a vertical direction to an opening of the container, by the differential pressure between the inside pressure and the outside pressure of said semiconductor manufacturing apparatus, is set to be 0.06 ((m/s) Pa) or less.

Semiconductor container opening/closing apparatus and semiconductor device manufacturing method

Semiconductor integrated circuit device manufacturing method including static charge elimination

When a conventional semiconductor container opening/closing apparatus opens a lid of a semiconductor container, foreign particles enter into the container from outside through a gap between the container and a wall surface of the container opening/closing apparatus and adhere to a wafer in the container. A method is provided to reduce the number of foreign particles adhering to the wafer by preventing foreign particles from entering into the container at the time of opening the container by the opening/closing apparatus. To achieve this, a velocity-differential pressure ratio obtained by dividing the maximum velocity at the time of opening the lid of the container in a vertical direction to an opening of the container, by the differential pressure between the inside pressure and the outside pressure of said semiconductor manufacturing apparatus, is set to be 0.06 ((m/s) Pa) or less.

Method of manufacturing a semiconductor integrated circuit device which prevents foreign particles from being drawn into a semiconductor container containing semiconductor wafers

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Hitachinaka, Japan

Yoshiaki Kobayashi