Sony Corporation

Sony Semiconductor Solutions Corporation

Yoshiaki Kitano

Mitsuru Sato

Hideshi Abe

Nobuhiro Karasawa

Hiroaki Ohki

Jun Kuroiwa

Ritsuo Takizawa

Kiyoshi Hirata

Mitsuru Yamashita

Katsunori Kokubun

Minoru Ishida

Keiichi Nakazawa

Hirofumi Yamashita

Shinya Watanabe

Keiji Tatani

Masaru Suzuki

Kyoko Izuha

Tomohiko Asatsuma

Satoko Iida

Toshiaki Ono

Hiromi Wano

Yosuke Isoo

Kouji Yahazu

Yuya Maeda

Shinya Sato

Yoichi Ootsuka

Katsunori Hiramatsu

Yuichi Seki

Yuuji Nishimura

Hiromi Okazaki

Masaya Shimoji

Toyomi Jinwaki

Yusuke Matsumura

Shintaro Okamoto

Kouichi Itabasi

Mitsuru Ishikawa

Yosuke Takita

Ryoko Kajikawa

Kengo Nagata

Kazuya Furumoto

Takashi Nakashikiryo

Ryou Chiba

Takafumi Nishi

Provided is a solid-state imaging device capable of acquiring an image with higher image quality. It includes a plurality of pixel units including on-chip lenses, color filters, and photoelectric conversion units. The plurality of pixel units includes a first pixel unit (e.g., a pixel unit of an imaging pixel) and a second pixel unit (e.g., a pixel unit of a phase-difference detection pixel), the first pixel unit including an on-chip lens of a predetermined size, the second pixel unit including an on-chip lens of a size larger than the predetermined size, the first pixel unit including first pixel units, the second pixel unit including second pixel units. A height of an inter-CF light-shielding portion surrounding the respective color filters of the second pixel units is larger than a height of an inter-CF light-shielding portion between the color filters of the first pixel units.

Solid-state imaging device and electronic apparatus having light-shielding portions of different heights

An imaging device according to embodiments of the present disclosure includes: a first semiconductor substrate provided with a photoelectric conversion element, floating diffusion that temporarily holds a charge output from the photoelectric conversion element, and a transfer transistor that transfers the charge output from the photoelectric conversion element to the floating diffusion; and a second semiconductor substrate provided on the first semiconductor substrate via a first interlayer insulating film and provided with a readout circuit unit that reads out the charge held in the floating diffusion and outputs a pixel signal.

Imaging device

An imaging element according to an embodiment of the present disclosure includes: a first substrate, a second substrate, and a third substrate that are stacked in this order. The first substrate including a sensor pixel that performs photoelectric conversion and the second substrate including a readout circuit are electrically coupled to each other by a first through wiring line provided in an interlayer insulating film. The second substrate and the third substrate including a logic circuit are electrically coupled to each other by a junction between pad electrodes or a second through wiring line penetrating through a semiconductor substrate.

Imaging element

There is provided a solid-state imaging device including: a first substrate including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated; a second substrate including a semiconductor layer and a pixel transistor, the semiconductor layer being stacked on the first substrate, and the pixel transistor that includes a gate electrode opposed to the semiconductor layer, and reads the signal electric charge of the electric charge accumulation section; and a through electrode that is provided in the first substrate and the second substrate, and electrically couples the first substrate and the second substrate to each other and is partially in contact with the gate electrode.

Solid-state imaging device

A solid-state imaging element which detects visible light and ultraviolet light in one pixel provides improved resolution. First and second photoelectric conversion elements each perform photoelectric conversion of incident light. A first accumulation part accumulates electric charges that are photoelectrically converted by the first photoelectric conversion element second accumulation part is disposed on one face of a substrate and accumulates electric charges that are photoelectrically converted by the second photoelectric conversion element. A connection part is connected to the second accumulation part and transfers the electric charges accumulated in the second accumulation part to another face of the substrate.

Solid-state imaging element and electronic device

Provided is a solid-state imaging element configured to automatically extend dynamic range for each unit pixel. A solid-state imaging element includes, for a unit pixel, a first photoelectric conversion element, a first accumulation portion that accumulates electric charge obtained by photoelectric conversion by the first photoelectric conversion element, and a first film that is electrically connected to the first accumulation portion and has an optical characteristic changing according to applied voltage. Furthermore, the unit pixel of the solid-state imaging element can further include a first transfer transistor that transfers electric charge obtained by photoelectric conversion by the photoelectric conversion element to the first accumulation portion, an amplification transistor that is electrically connected to the first accumulation portion, and a selection transistor that is electrically connected to the amplification transistor.

Solid-state imaging element, method of driving solid-state imaging element, and electronic apparatus

The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.

Solid-state imaging device, method of manufacturing the same, and electronic apparatus

An imaging apparatus, for example, a solid-state imaging device, includes a phase difference pixel, and an electronic apparatus that optimizes the optical properties (pupil separation performance) of the phase difference pixel, and the optical properties (light sensitivity) of a standard pixel. The solid-state imaging device includes a standard pixel and a phase difference pixel. The standard pixel includes a first optical waveguide that guides incident light to a light receiving region. The phase difference pixel includes a second optical waveguide that guides incident light to the light receiving region, and a first light shielding film provided on the upper layer side of the second optical waveguide. The upper end of the first optical waveguide of the standard pixel and the upper end of the second optical waveguide of the phase difference pixel are located at different heights.

Solid-state imaging device and electronic apparatus

A solid-state imaging device including pixel photododes on a light-receiving surface of a substrate; a first insulating film on the substrate covering a multilayer wiring on and in contact with the substrate. The first insulating film comprises material of a first refractive index lower than a refractive index of the substrate for at least bottom and top surface portions of the first insulating film. A second insulating film with a second refractive index higher than the first refractive index is on the first insulating film. A third insulating film with a third refractive index higher than the second refractive index is on the second insulating film. For each pixel, a color filter is on the third insulating film.

Solid-state imaging device, manufacturing method and designing method thereof, and electronic device

A solid-state imaging device includes a light sensing unit generating a signal charge by performing a photoelectric conversion of an incident light; a conductive material in the vicinity of the light sensing unit; a first light-shielding film formed to cover at least a portion of the conductive material; and a second light-shielding film formed on a part of or all of a surface of the first light-shielding film.

Solid-state imaging device and manufacturing method of the same, and imaging unit

A solid-state imaging device includes light-sensing sections serving as pixels, and waveguides each including a core layer and a cladding layer, the waveguides each being disposed at a position corresponding to one of the light-sensing sections. A cross-sectional structure of the waveguide taken in the horizontal direction of an imaging plane is different from a cross-sectional structure of the waveguide taken in the vertical direction of the imaging plane.

A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

A solid-state imaging device includes a semiconductor substrate, photodiodes, a first insulating film, a second insulating film, a third insulating film, and a color filter. The photodiodes are disposed on the semiconductor substrate. The first insulating film covers a multilayer wiring on the semiconductor substrate. The first insulating film comprises a material having a first refractive index lower than a refractive index of the semiconductor substrate for at least bottom surface and top surface portions of the first insulating film. The second insulating film has a second refractive index higher than the first refractive index. The third insulating film has a third refractive index higher than the second refractive index.

Growing community of inventors

Kanagawa, Japan

Yoshiaki Kitano