Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Yoshiaki Kasuga

Hiroaki Fujimoto

Takayuki Yoshida

Ichiro Yamane

Tadaaki Mimura

Takio Yamashita

Toshio Matsuki

Masato Suzuki

Takashi Otsuka

Yuichi Hashimoto

Touru Kakiage

Jyunichi Yasui

Hiroaki Yamamoto

Shinji Ozaki

Akira Miyoshi

Yoshito Nishimichi

Satoshi Ogura

Seiji Tokunoh

A method of transferring data through a bus includes the steps of: occupying the bus by a first device serving as a bus master; transferring a first predetermined number of data items of all data items to be transferred while the first device is occupying the bus; determining if the first predetermined number of data items have been transferred; determining if the first device should release the bus based on whether or not there is a request from a second device after it is determined that the first predetermined number of data items have been transferred; and releasing the bus by the first deice when it is determined that the first device should release the bus.

Apparatus and method of partially transferring data through bus and bus master control device

A method of transferring data through a bus includes the steps of: occupying the bus by a first device serving as a bus master; transferring a first predetermined number of data items of all data items to be transferred while the first device is occupying the bus; determining if the first predetermined number of data items have been transferred; determining if the first device should release the bus based on whether or not there is a request from a second device after it is determined that the first predetermined number of data items have been transferred; and releasing the bus by the first device when it is determined that the first device should release the bus.

Apparatus and method of partially transferring data through bus and bus

A semiconductor integrated circuit includes a functional block realizing at least part of a function of the semiconductor integrated circuit. The functional block includes a plurality of basic cells and a plurality of terminal cells. Each of the plurality of terminal cells has a connector for mediating a communication between another semiconductor integrated circuit and one of the plurality of basic cells.

Semiconductor integrated circuit and system incorporating the same

The present invention reduces crosstalk, which occurs as a result of interference between signals running in each of respective wiring layers of a first semiconductor chip and a second semiconductor chip stacked surface to surface with a small gap. The semiconductor device includes a first semiconductor chip 1 having a first electrode pad 2 and a first wiring layer 9 in the main surface, and a second semiconductor chip 5 having a second electrode pad 6 and a second wiring layer 10 in the main surface confronting the first semiconductor chip. A bump 4 is provided for electrically coupling the first electrode pad 2 and the second electrode pad 6 together. An insulation layer 8 is disposed between the main surfaces of first semiconductor chip 1 and second semiconductor chip 5. An electro-conductive layer 7 is disposed between the main confronting surfaces of the first semiconductor chip and the second semiconductor chip.

Structure of chip on chip mounting preventing from crosstalk noise

A microcomputer chip is formed with a CPU core, a peripheral circuit, a built-in ROM, and a built-in RAM. An emulation functional chip is formed with an emulation control circuit for controlling the whole process of emulation. First electrode pads formed on the functional surface of the microcomputer chip are electrically interconnected to second electrode pads formed on the functional surface of the emulation functional chip with connecting bumps interposed therebetween. The microcomputer chip and the emulation functional chip are modularized using an insulating resin with the first electrode pads being connected to the second electrode pads.

Semiconductor device

The present invention reduces crosstalk noise, which occurs as a result of interference between signals running in each of respective wiring layers of a first semiconductor chip and a second semiconductor chip stacked surface to surface with a small gap. The semiconductor device includes a first semiconductor chip (1) having a first electrode pad (2) and a first wiring layer (9), and a second semiconductor chip (5) having a second electrode pad (6) and a second wiring layer (10). A bump (4) is provided for electrically coupling the first electrode pad (2) and the second electrode pad (6). An insulation layer 8 is disposed between confronting surfaces of the first semiconductor chip (1) and the second semiconductor chip (5). An electro-conductive layer (7) is disposed between the confronting surfaces of the first semiconductor chip and the second semiconductor chip.

Growing community of inventors

Shiga, Japan

Yoshiaki Kasuga