Sumitomo Electric Industries, Limited

Yoshiaki Itoh

Yusuke Odani

Yoshinobu Takeda

Nobuhito Kuroishi

Kiyoaki Akechi

Tetsuya Hayashi

Toshihiko Kaji

Kozo Ito

A low alloy sintered steel contains at least 0.15 percent by weight and less than 0.8 percent by weight of carbon. Its matrix is formed by a tempered martensite containing prior austenite crystal grains of not more than 15 .mu.m in mean grain size. Pores and nonmetallic inclusions contained in the matrix are not more than 50 .mu.m in maximum diameter, and the density of the low alloy sintered steel is at least 96 percent of theoretical density. A raw material powder for forming the low alloy sintered steel includes iron alloy powder which is prepared by an atomizing process, and is treated with a dry mill in an inert gas atmosphere or in the atmospheric air. Thus, dislocations are introduced into the raw material powder, and nonmetallic inclusions contained in the raw material powder are pulverized to be not more than 50 .mu.m in maximum diameter. Not only static characteristics but also dynamic characteristics, such as fatigue strength, of the low alloy sintered steel are improved.

Low alloy sintered steel and method of preparing the same

An aluminum alloy is melted and sprayed from a nozzle. Solid particles of silicon are sprayed by gas jet simultaneously with spraying of the aluminum alloy. Both the sprayed aluminum alloy and the sprayed solid particles of silicon are deposited and cooled.

Method of producing aluminum base alloy containing silicon

A new material for use in the manufacture of semiconductor devices, a method of manufacturing the new material, and a heat radiator structure for a semiconductor device. The material is an aluminum alloy containing 30-60% by weight of Si and the remaining weight % is Al. The method of manufacture includes solidifying molten material into a powder and forming the powder by hot plastic working. The heat radiator structure includes a substrate of envelope material and an Al-Si alloy layer glued to the substrate through a function layer.

Aluminum-silicon alloy heatsink for semiconductor devices

Method for producing material for semiconductor device

Growing community of inventors

Hyogo, Japan

Yoshiaki Itoh