Sony Corporation

Yoshiaki Hagiwara

Hideaki Kuroda

Akira Nakagawara

Michitaka Kubota

Hiroshi Yamazaki

A semiconductor nonvolatile memory device improving reproducibility and reliability of insulation breakage of a silicon oxide film and capable of reducing the manufacturing cost and a method for production of the same, wherein each of the memory cells arranged in a matrix form has an insulating film breakage type fuse comprising an impurity region of a first conductivity type formed on a semiconductor substrate, a first insulating film formed on the semiconductor substrate while covering the impurity region, an opening formed in the first insulating film so as to reach the impurity region, and a first semiconductor layer of a first conductivity type, a second insulating film, and a second semiconductor layer of a second conductivity type successively stacked in the opening from the impurity region side, or has an insulating film breakage type fuse comprising an impurity region of a first conductivity type in the first semiconductor layer having an SOI structure, a first insulating film on the SOI layer, an opening reaching the impurity region, and a second insulating film and a second semiconductor layer of a second conductivity type stacked in the opening.

One time programmable semiconductor nonvolatile memory device and method for production of same

A disk comprised by a substrate a signal layer made of aluminum in which pits are formed, and a protective plate The information reproducing apparatus emits an electron beam E from an electron gun to the signal layer of the disk detects a change of the incident intensity of the reflection thereof via a detector and reproduces the information of the disk by a reproducing circuit . A recording medium comprised by a conductive layer an insulating layer and island-like fixed electrodes thereon electrically insulated from the periphery with a memory function imparted to the fixed electrodes. For the writing, electrons are injected into the fixed electrodes by the electron gun. For full erasure, a voltage is applied to the conductive layer For the reading, the electrostatic effect of the counter electrodes and the fixed electrodes is utilized. This enables an increase of the volume of information and an enhancement of precision of the reading of the information.

Recording medium, information reproducing apparatus, information recording apparatus, and information recording and reproducing apparatus

An information reproducing apparatus emits an electron beam E from an electron gun to a signal layer of a disk , detects a change of the incident intensity of the reflection thereof via a detector , and reproduces the information of the disk by a reproducing circuit . A recording medium has a conductive layer , an insulating layer , and island-like fixed electrodes thereon electrically insulated from the periphery with a memory function imparted to the fixed electrodes. For the writing, electrons are injected into the fixed electrodes by the electron gun. For full erasure, a voltage is applied to the conductive layer . For the reading, the electrostatic effect of the counter electrodes and the fixed electrodes is utilized. This enables an increase of the volume of information and an enhancement of precision of the reading of the information.

Recording medium, information reproducing apparatus, information

A solid state imager device having a charge accumulating region of a second conductivity type formed on the surface side of a semiconductor substrate of a first conductivity type which has a charge accumulating region of the second conductivity type laminated on the charge accumulating region, the second conductivity type region and the charge accumulating region forming a charge accumulating section, and a first conductivity type region formed on the surface of and/or on the side of the second conductivity type region, wherein if an excessive signal charge is produced in the charge accumulating section, the excessive signal charge is absorbed in the first conductivity type region, whereby brooming can be satisfactorily suppressed and higher integration of the device can be achieved.

Solid state imager device

The present invention relates to a charge transfer device which allows change of the charge transfer direction wherein transfer portions are formed of generally rectangular shape which have a length in the charge transfer direction which gradually gets longer to the transition direction change area and widths which get smaller relative to the direction transverse to the charge transfer direction. The length times width of the transfer portions is made substantially constant. The feature providing that the transfer regions become narrower as they approach the portion of charge direction change allows the charge direction change to be relatively shorter than apparatus of the prior art thus resulting in greater efficiency, shorter charge transfer time, eliminates the requirement for direct current bias and a more integrated device is provided.

Charge transfer device which has a pair of straight portions joined by a

A method of making a charge transfer device which has charge transfer portions arranged in a semiconductor substrate, each of said charge transfer portions having electrodes, and in which an effective asymmetrical potential is produced in each of the charge transfer portions in a carrier transfer direction by the affect of the potential of channel stopper regions upon charge transfer. The method has the steps of forming channel stopper regions, which define a charge transfer line, in the substrate, forming a first polycrystalline semiconductor layer which becomes a first gate electrode of every second charge transfer portion, forming a second polycrystalline semiconductor layer which becomes a second gate electrode of the other of every second charge transfer portion, and forming a portion which is extended from at least the channel stopper region and produces the asymmetrical potential, by selectively doping an impurity into the substrate with the first and second polycrystalline semiconductor layers as a doping mask.

Method of making a charge transfer device

A method of manufacturing charge transfer devices in which an asymmetrical potential well in the direction of charge transfer is formed by the shape of narrower portions of a transfer channel which is bordered by highly doped channel stoppers. Impurities are diffused through a first mask into a polycrystalline silicon layer on the surface of a semiconductor substrate to construct transfer electrodes of highly doped polycrystalline layer. Then impurities are diffused into a semiconductor substrate through openings bordering on one edge with a first mask to form the highly doped portions to make the narrower portions of the transfer channel to assure that the edges of the transfer electrode and the edge of the narrower portion are aligned.

Method of manufacturing a charge transfer device

A charge coupled device capable of operating with two phase clock pulses wherein asymmetrical potential wells are established by the use of channel stoppers which are formed on opposite edges of the charge coupled device and which have restricted portions through which the charges can flow from one storage area to the other. The invention also comprises an information storage device including an array of photosensors with certain photosensors coupled to a particular charge transfer device according to the invention wherein channel stoppers with restricted passages are formed so as to provide asymmetrical charge transfer between the photosensors and various elements of the charge transfer device.

Growing community of inventors

Kanagawa, Japan

Yoshiaki Hagiwara