Nuflare Technology, Inc.

Canon Anelva Corporation

Kabushiki Kaisha Toshiba

Yoshiaki Daigo

Hideki Ito

Takuto Umetsu

Yoshikazu Moriyama

Keiji Ishibashi

Akio Ishiguro

Kiyotaka Miyano

Toru Watanabe

Takuya Seino

Kazuto Yamanaka

Yuki Furutani

Yoshitaka Ohtsuka

Shun Haruyama

Hiroyuki Makita

Sotaro Ishibashi

Keiko Shiozawa

Shigeaki Ishii

A film deposition method according to an embodiment includes rotating a wafer mounted on a susceptor in a reaction chamber. Next, a temperature of the wafer is controlled such that, when changing a rotational speed of the wafer before and after a film deposition step of introducing a process gas into the reaction chamber and epitaxially growing a SiC film on the wafer, a force of friction generated on a contact surface between the wafer and the susceptor becomes larger than a force of inertia generated in a direction of rotation of the wafer.

Film deposition method

According to one embodiment, a rectifying plate is opposed to a plurality of nozzles which are configured to inject a fluid. The rectifying plate is configured to rectify the fluid. The rectifying plate includes: a plurality of high flow path resistance areas, and a low flow path resistance area. Each of the high flow path resistance areas includes a nozzle-facing area which is opposed to one of the plurality of nozzles. The low flow path resistance area surrounds each of the plurality of high flow path resistance areas. The low flow path resistance area includes a plurality of first through-holes to allow the fluid to pass through and having a smaller flow path resistance of the fluid than that of the high flow path resistance area.

Rectifying plate, fluid-introducing apparatus, and film-forming apparatus

Susceptor cover

Susceptor ring

A vapor phase growth apparatus according to an embodiment includes a reaction chamber; a substrate holder having a holding wall capable holding an outer periphery of the substrate; a process gas supply part provided above the reaction chamber, the process gas supply part having a first region supplying a first process gas and a second region around the first region supplying a second process gas having a carbon/silicon atomic ratio higher than that of the first process gas, an inner peripheral diameter of the second region being 75% or more and 130% or less of a diameter of the holding wall; a sidewall provided between the process gas supply part and the substrate holder, an inner peripheral diameter of the sidewall being 110% or more and 200% or less of an outer peripheral diameter of the second region; a first heater; a second heater; and a rotation driver.

Vapor phase growth apparatus and vapor phase growth method

A substrate is mounted on a rotator provided in a reaction chamber, while a first process gas containing no source gas is supplied to an upper surface of the substrate from above the substrate and the substrate is rotated at 300 rpm or more, a temperature of a wall surface is changed, and after a temperature of the substrate is allowed to rise, the substrate is controlled to a predetermined film formation temperature and a second process gas containing a source gas is supplied to the upper surface of the substrate from above the substrate to grow an SiC film on the substrate.

Vapor phase growth method

The present invention provides a film formation method and a film formation apparatus which can fabricate an epitaxial film with +c polarity by a sputtering method. In one embodiment of the present invention, the film formation method of epitaxially growing a semiconductor thin film with a wurtzite structure by the sputtering method on an epitaxial growth substrate heated to a predetermined temperature by a heater includes the following steps. First, the substrate is disposed on a substrate holding portion including the heater to be located at a predetermined distance away from the heater. Then, the epitaxial film of the semiconductor film with the wurtzite structure is formed on the substrate with the impedance of the substrate holding portion being adjusted.

Film formation method, vacuum processing apparatus, method of manufacturing semiconductor light emitting element, semiconductor light emitting element, method of manufacturing semiconductor electronic element, semiconductor electronic element, and illuminating apparatus

The present invention provides an epitaxial film forming method for epitaxially growing a high-quality group III nitride semiconductor thin film on an &#x3b1;-AlOsubstrate by a sputtering method. In the epitaxial film forming method according to an embodiment of the present invention, when an epitaxial film of a group III nitride semiconductor thin film is to be formed on the &#x3b1;-AlOsubstrate arranged on a substrate holder provided with a heater electrode and a bias electrode of a sputtering apparatus, in a state where the &#x3b1;-AlOsubstrate is maintained at a predetermined temperature by the heater electrode, high-frequency power is applied to a target electrode and high-frequency bias power is applied to a bias electrode and at that time, the powers are applied so that frequency interference between the high-frequency power and the high-frequency bias power does not occur.

Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device

The film forming apparatus includes a reaction chamber in which a substrate subjected to film forming processing can be placed, a gas supplier provided in an upper part of the reaction chamber, having a portion where gas is introduced and gas supply holes to face the substrate, a source-gas introducing line introducing a source gas into the gas supplier, a replacement-gas introducing line introducing a replacement gas into the gas supplier, a discharge line discharging the replacement gas along with a remaining source gas which is the source gas remaining in the gas supplier from the gas supplier; and a controller controlling one of an introduction amount of the replacement gas and a discharge amount of the remaining source gas and the replacement gas to be an amount corresponding to the other amount.

Film forming apparatus and film forming method

An object of the present invention is to provide a film formation technique having high productivity by realizing a foundation layer having excellent crystallinity with a small film thickness of about 2 &#x3bc;m. An embodiment of the present invention relates to a film forming method which includes the step of forming a buffer layer by sputtering on a sapphire substrate held by a substrate holder. The buffer layer includes an epitaxial film having a wurtzite structure prepared by adding at least one substance selected from the group consisting of C, Si, Ge, Mg, Zn, Mn, and Cr to AlGaN (where 0&#x2264;x&#x2264;1).

Film forming method, method of manufacturing semiconductor light-emitting device, semiconductor light-emitting device, and illuminating device

The present invention has an object to provide an epitaxial film forming method of epitaxially growing a high-quality group III nitride semiconductor thin film on an &#x3b1;-AlOsubstrate by a sputtering method. An epitaxial film forming method according to an embodiment of the present invention includes forming an epitaxial film of a group III nitride semiconductor thin film on an &#x3b1;-AlOsubstrate placed on a substrate holder () including a heater electrode () and a bias electrode () in a sputtering apparatus () by applying high-frequency power to a target electrode () and applying high-frequency bias power to the bias electrode () while the heater electrode () maintains the &#x3b1;-AlOsubstrate at a predetermined temperature. In this process, the high-frequency power and the high-frequency bias power are applied so that frequency interference therebetween may not occur.

In one embodiment of the present invention, a film forming method of epitaxially growing a semiconductor film having a wurtzite structure by sputtering on a substrate for epitaxial growth heated to a desired temperature by using a heater, comprises the following steps. First, the substrate is disposed on a substrate holder including the heater in such a way that the substrate is disposed away from the heater by a predetermined distance. Then, the epitaxial film of the semiconductor film having the wurtzite structure is formed on the substrate in the state where the substrate is disposed away from the heater by the predetermined distance.

Film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device

The present invention provides: an epitaxial film forming method capable of fabricating a +c-polarity epitaxial film made of a Group III nitride semiconductor by sputtering; and a vacuum processing apparatus suitable for this epitaxial film forming method. In one embodiment of the present invention, a Group III nitride semiconductor thin film is epitaxially grown by sputtering on an &#x3b1;-AlOsubstrate heated to a desired temperature by using a heater. First, the &#x3b1;-AlOsubstrate is disposed on a substrate holder including the heater in such a way that the &#x3b1;-AlOsubstrate is disposed away from the heater by a predetermined distance. Then, an epitaxial film of a Group III nitride semiconductor thin film is formed on the &#x3b1;-AlOsubstrate in the state where the &#x3b1;-AlOsubstrate is disposed away from the heater by the predetermined distance.

Epitaxial film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device

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Kawasaki, Japan

Yoshiaki Daigo