Mitsubishi Denki Kabushiki Kaisha

Yoshiaki Arima

Shuichi Kato

Nobuyuki Ikeda

Takenobu Iwao

A macro cell of field effect transistors includes source-drain areas respectively divided into a contact area and a non-contact area. One source-drain area of two of the source-drain areas located on opposite sides of the effective width portion of a gate electrode has a contact area at an upper portion and a non-contact area at a lower portion while the other source-drain area has the non-contact area at its upper portion and the contact area at its lower portion. The distance between effective width portions of gate electrodes where the non-contact area is located is smaller than the distance between effective width portions of gate electrodes where the contact area is located.

Growing community of inventors

Tokyo, Japan

Yoshiaki Arima