Gsi Technology, Inc.

Yoshi Sato

LeeLean Shu

Hsin You S Lee

Systems and methods relating to memory and/or memory latching are disclosed. In one exemplary implementation, an illustrative memory device may include self-timed pulse generator circuitry, first input latch circuitry, read/write control circuitry, and second input latch circuitry. According to further implementations herein, fast address access for read and write may be provided in the same cycle via a self-timed pulse in the input latch circuit and/or via associated control/scheme from the control circuit.

Systems and methods of double/quad data rate memory involving input latching, self-timing and/or other features

Systems and methods relating to memory and/or memory latching are disclosed. In one exemplary implementation, an illustrative memory device may include self-timed pulse generator circuitry, first input latch circuitry, read/write control circuitry, and second input latch circuitry. According to further implementations herein, fast address access for read and write may be provided in the same cycle via a self-timed pulse in the input latch circuit and/or via associated control/scheme from control circuitry.

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San Jose, CA, United States of America

Yoshi Sato