Mattson Technology, Inc

Beijing E-town Semiconductor Technology, Co., Ltd

Yorkman Ma

Dixit V Desai

Shawn Gibson

Zion Koren

James Tsuneo Taoka

Rudy Santo Tomas Cardema

Craig McFarland

Lois Wride

Plasma processing apparatus and methods are disclosed. In one example implementation, a plasma processing apparatus can include a processing chamber. The apparatus can include a pedestal located in the processing chamber configured to support a workpiece during processing. The apparatus can include a dielectric window forming at least a portion of the processing chamber. The apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma in the processing chamber when energized with RF energy. The apparatus can include a Faraday shield located between the inductive coupling element and the processing chamber. The apparatus can include at least one temperature control element in thermal communication with the Faraday shield.

Temperature control using temperature control element coupled to faraday shield

The present invention is generally directed to a system and process for rotating semiconductor wafers in thermal processing chambers, such as rapid thermal processing chambers and chemical vapor deposition chambers. In accordance with the present invention, a semiconductor wafer is supported on a substrate holder which, in turn, is supported on a rotor. During processing, the rotor is magnetically levitated and magnetically rotated by suspension actuators and rotation actuators positioned outside of the chamber.

Method and system for rotating a semiconductor wafer in processing chambers

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Yorkman Ma