Kabushiki Kaisha Toshiba

Yoriyasu Ando

Tetsuya Yamamoto

Taku Nishiyama

Naohisa Okumura

Kiyokazu Okada

Jun Tanaka

Takashi Imoto

Akira Tanimoto

Koichi Miyashita

Masatoshi Kawato

Yusuke Dohmae

Naoki Iwamasa

Masaji Iwamoto

Masashi Noda

In one embodiment, a semiconductor device includes a first semiconductor chip disposed on a circuit board, an adhesive layer fixing the first semiconductor chip to the circuit board, and a second semiconductor chip having an outer shape smaller than that of the first semiconductor chip. At least a part of the second semiconductor chip is embedded in the adhesive layer. The adhesive layer has a thickness in a range of 95 to 150 &#x3bc;m. The adhesive layer includes a cured product of a thermosetting resin whose thermal time viscosity at a time that the second semiconductor chip is embedded is in a range of 500 to 5000 Pa&#xb7;s.

Semiconductor device and method for manufacturing the same

A semiconductor memory device is provided with a wiring board which includes an element mounting portion and connection pads. Plural semiconductor memory elements are stacked on the element mounting portion of the wiring board. The semiconductor memory element of a lower side has a thickness greater than that of the semiconductor memory element of an upper side. The semiconductor memory elements are electrically connected to the connection pads of the wiring board via metal wires.

Semiconductor memory device and semiconductor memory card using the same

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Yokkaichi, Japan

Yoriyasu Ando